Vishay Intertechnology Small Signal Bipolar Junction Transistors (BJT) 27

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

ULN2803LW

Vishay Intertechnology

NPN

COMPLEX

YES

.5 A

PLASTIC/EPOXY

SWITCHING

1.6 V

GULL WING

RECTANGULAR

8

18

SMALL OUTLINE

85 Cel

SILICON

50 V

-20 Cel

DUAL

R-PDSO-G18

2N3019

Vishay Intertechnology

NPN

NO

100 MHz

1 A

METAL

WIRE

ROUND

1

3

CYLINDRICAL

80

SILICON

80 V

BOTTOM

O-MBCY-W3

Not Qualified

TO-39

MMBTA92

Vishay Intertechnology

PNP

SINGLE

YES

50 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

25

150 Cel

SILICON

300 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

ULN2802A

Vishay Intertechnology

NPN

COMPLEX

NO

.5 A

PLASTIC/EPOXY

SWITCHING

1.6 V

THROUGH-HOLE

RECTANGULAR

8

18

IN-LINE

85 Cel

SILICON

50 V

-20 Cel

DUAL

R-PDIP-T18

MPSA06

Vishay Intertechnology

NPN

SINGLE

NO

100 MHz

.625 W

.5 A

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Other Transistors

100

150 Cel

SILICON

80 V

MATTE TIN

BOTTOM

O-PBCY-W3

1

Not Qualified

TO-226AA

e3

BC549C

Vishay Intertechnology

NPN

SINGLE

NO

300 MHz

.1 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

420

150 Cel

SILICON

30 V

MATTE TIN

BOTTOM

O-PBCY-W3

1

Not Qualified

LOW NOISE

TO-226AA

e3

ULN2801A

Vishay Intertechnology

NPN

COMPLEX

NO

.5 A

PLASTIC/EPOXY

SWITCHING

1.6 V

THROUGH-HOLE

RECTANGULAR

8

18

IN-LINE

1000

85 Cel

SILICON

50 V

-20 Cel

DUAL

R-PDIP-T18

2N5089

Vishay Intertechnology

NPN

SINGLE

NO

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

400

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2N3859A

Vishay Intertechnology

NPN

SINGLE

NO

90 MHz

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2N3417

Vishay Intertechnology

NPN

SINGLE

NO

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

180

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

ULN2001A

Vishay Intertechnology

NPN

COMPLEX

NO

.5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

7

16

IN-LINE

1000

SILICON

50 V

DUAL

R-PDIP-T16

Not Qualified

2N5172

Vishay Intertechnology

NPN

SINGLE

NO

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

100

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

MPSA18

Vishay Intertechnology

NPN

NO

100 MHz

.2 A

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

500

SILICON

45 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AA

2N5088

Vishay Intertechnology

NPN

SINGLE

NO

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

300

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

BC549B

Vishay Intertechnology

NPN

SINGLE

NO

300 MHz

.1 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

200

150 Cel

SILICON

30 V

MATTE TIN

BOTTOM

O-PBCY-W3

1

Not Qualified

LOW NOISE

TO-226AA

e3

BC546C

Vishay Intertechnology

NPN

SINGLE

NO

.5 W

.1 A

1

Other Transistors

420

150 Cel

BCW66FR

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

TO-236AA

2N5366

Vishay Intertechnology

PNP

SINGLE

NO

250 MHz

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

40

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

ULN2805A

Vishay Intertechnology

NPN

COMPLEX

NO

.5 A

PLASTIC/EPOXY

SWITCHING

1.6 V

THROUGH-HOLE

RECTANGULAR

8

18

IN-LINE

85 Cel

SILICON

50 V

-20 Cel

DUAL

R-PDIP-T18

2N2712

Vishay Intertechnology

NPN

SINGLE

NO

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

75

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2N5355

Vishay Intertechnology

PNP

SINGLE

NO

250 MHz

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

40

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2N3391

Vishay Intertechnology

NPN

SINGLE

NO

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

250

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2N3901

Vishay Intertechnology

NPN

SINGLE

NO

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

350

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2N4249

Vishay Intertechnology

PNP

NO

100 MHz

.1 A

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

100

150 Cel

SILICON

60 V

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2N4265

Vishay Intertechnology

NPN

SINGLE

NO

300 MHz

PLASTIC/EPOXY

WIRE

ROUND

1

3

CYLINDRICAL

36

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2N4356

Vishay Intertechnology

PNP

NO

100 MHz

.5 A

METAL

WIRE

ROUND

1

4

CYLINDRICAL

25

125 Cel

SILICON

80 V

BOTTOM

O-MBCY-W4

Not Qualified

TO-222AB

MPS6522

Vishay Intertechnology

PNP

SINGLE

NO

340 MHz

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

200

SILICON

25 V

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395