.2 W Small Signal Field Effect Transistors (FET) 350

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

UPA1913TE

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

4.5 A

DUAL

R-PDSO-G6

Not Qualified

ESD PROTECTED

e0

2SK2158A-T2B-AT

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA679TB

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.35 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

.35 A

DUAL

R-PDSO-G6

Not Qualified

e0

UPA679TB-T2-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

.2 W

.35 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.35 A

e6

2SJ166

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

50 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

HIGH INPUT IMPEDANCE

e0

2SJ210-T2B-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

15 ohm

.2 A

DUAL

R-PDSO-G3

e6

2SJ647-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

1.55 ohm

.4 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

2SJ243-T1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

2SJ209-T1B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

2SJ559

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

23 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SJ211-T2B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.2 A

e6

2SJ243-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

TIN BISMUTH

25 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

ESD PROTECTED

e6

10

260

2SJ203-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

16 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

TIN BISMUTH

23 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

UPA573T

Renesas Electronics

P-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

TIN LEAD

25 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e0

2SJ166-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

50 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

HIGH INPUT IMPEDANCE

e6

10

260

UPA675T

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

16 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

15 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e0

UPA677TB-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.35 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.6 ohm

.35 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

2SJ559-T1-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

23 ohm

.1 A

DUAL

R-PDSO-G3

e6

2SJ204-T1B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.2 A

e6

2SJ211

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

30 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

e0

UPA679TB-T1-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

.2 W

.35 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.35 A

e6

UPA572T-T1-A

Renesas Electronics

N-CHANNEL

YES

.2 W

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

UPA1915TE

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

4.5 A

DUAL

R-PDSO-G6

Not Qualified

e0

UPA1910TE-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.09 ohm

2.5 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

UPA678TB(0)-T1-AT

Renesas Electronics

P-CHANNEL

YES

.2 W

.25 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.25 A

NOT SPECIFIED

NOT SPECIFIED

UPA672T-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

40 ohm

.1 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

2SJ648-T1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.4 A

e6

UPA572T

Renesas Electronics

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

TIN LEAD

8 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e0

2SJ648-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

1.55 ohm

.4 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

2SJ461

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

50 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

e0

UPA1910TE

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

2.5 A

DUAL

R-PDSO-G6

Not Qualified

e0

2SJ204-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

TIN BISMUTH

13 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

2SJ210

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

15 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SJ166-T1B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

UPA572T-A

Renesas Electronics

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

TIN BISMUTH

8 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e6

10

260

2SK520-K42

Renesas Electronics

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

.05 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

2SJ647-T1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.4 A

e6

UPA572T(0)-T1-A

Renesas Electronics

N-CHANNEL

YES

.2 W

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

e6

2SJ243

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

Tin/Lead (Sn/Pb)

25 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

ESD PROTECTED

e0

UPA677TB(0)-T1-A

Renesas Electronics

N-CHANNEL

YES

.2 W

.35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.35 A

e6

2SJ209-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

100 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

2SJ461-T2B-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

50 ohm

.1 A

DUAL

R-PDSO-G3

e6

2SK2158A-T1B-AT

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SJ648

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.55 ohm

.4 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SK520-K45

Renesas Electronics

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

.05 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

2SK2158

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

20 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

GATE PROTECTED, HIGH INPUT IMPEDANCE

e0

2SK1591-T1B-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

8 ohm

.2 A

DUAL

R-PDSO-G3

e6

2SK1133-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

50 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

e6

10

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.