Renesas Electronics Small Signal Field Effect Transistors (FET) 1,858

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SK3113-S15-AZ

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SK4075B-ZK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

36 W

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

50 A

NOT SPECIFIED

NOT SPECIFIED

2SK322WT01

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK4075-ZK-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0067 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e3

2SK1070PICTR-E

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Bismuth (Sn/Bi)

.05 A

DUAL

R-PDSO-G3

1

Not Qualified

e6

20

260

2SK3577(0)-T1B-AT

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SK3991-ZK-E1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

21 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0302 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

2SK4069-S15-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

21 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.021 ohm

30 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e3

2SK40RR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

50 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.01 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK3653CEE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

FLAT

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

TIN LEAD

.01 A

DUAL

R-PDSO-F3

Not Qualified

e0

2SK1582(0)-T1B-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

5 ohm

.2 A

DUAL

R-PDSO-G3

e6

2SK435-B

Renesas Electronics

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

AMPLIFIER

22 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

.1 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

4 pF

2SK160A-T1B-A

Renesas Electronics

TIN BISMUTH

e6

2SK494DTZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.1 A

SINGLE

R-PSIP-T3

Not Qualified

4 pF

2SK3634-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

20 W

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

NOT SPECIFIED

NOT SPECIFIED

2SK3349

Renesas Electronics

N-CHANNEL

SINGLE

YES

.1 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.05 A

2SK3386-Z-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

34 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.036 ohm

34 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AB

10

260

2SK187TZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK3635-Z-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

24 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.48 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

2SK1031XDBTL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.005 A

DUAL

R-PDSO-G3

Not Qualified

2SK431IHEUL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

2SK435-C

Renesas Electronics

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

AMPLIFIER

22 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

.1 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

4 pF

2SK1326XJD

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

22 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK194L

Renesas Electronics

N-CHANNEL

NO

.4 W

FET General Purpose Small Signal

JUNCTION

125 Cel

2SK4213A-ZK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

64 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.006 ohm

64 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

2SK3484-Z-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

30 W

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

NOT SPECIFIED

NOT SPECIFIED

2SK1485(0)-T1-AZ

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SK3290

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.525 ohm

.5 A

DUAL

R-PDSO-G3

Not Qualified

2SK3643-ZK

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

64 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.009 ohm

64 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AB

e0

2SK4095-T-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

250 V

WIRE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.5 ohm

.0005 A

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK3386-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.036 ohm

34 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

10

260

2SK3918-ZK

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

29 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0075 ohm

48 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

2SK3718

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

FLAT

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

.01 A

DUAL

R-PDSO-F3

1

Not Qualified

LOW NOISE

2SK3402(0)-Z-E1-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SK1070PID01

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK323KD01

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

2SK3105

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

2.5 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SK4041

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

DEPLETION MODE

1

4

SMALL OUTLINE

JUNCTION

SILICON

.01 A

DUAL

R-PDSO-N4

1

Not Qualified

LOW NOISE

2SK3918

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

29 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0075 ohm

48 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-251AA

2SK323KDUL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

2SK4076-ZK

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.025 ohm

35 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252

e0

2SK1772HYTR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.85 ohm

1 A

SINGLE

R-PSSO-F3

Not Qualified

e0

UPA1914TE-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

NOT SPECIFIED

NOT SPECIFIED

2SK3377(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

30 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

2SK1070PIETR-E

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Bismuth (Sn/Bi)

.05 A

DUAL

R-PDSO-G3

1

Not Qualified

e6

20

260

2SK3503-T1-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

16 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

15 ohm

.1 A

DUAL

R-PDSO-G3

e6

2SK1070

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK3919-ZK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

36 W

1

64 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

64 A

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.