NO Breakover Diodes 346

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  2. Breakover Diodes
Manufacturers
    • IXYS Corporation
    • Littelfuse
    • NXP Semiconductors
    • STMicroelectronics
Trigger Device Type
    • RVS BLOCKING BOD
    • SYMMETRICAL BOD
Package Style (Meter)
    • IN-LINE
    • LONG FORM
    • SMALL OUTLINE
Surface Mount (1)
    • NO
    • YES
Terminal Position
    • AXIAL
    • DUAL
    • SINGLE
Configuration
    • SINGLE
Case Connection
    • ISOLATED
    • TERMINAL 2
Package Body Material
    • CERAMIC, GLASS-SEALED
    • GLASS
    • PLASTIC/EPOXY
Nominal Holding Current
    • 130 mA
    • 150 mA
    • 30 mA
Minimum Breakdown Voltage
    • 105 V
    • 1150 V
    • 123 V
    • 1350 V
    • 140 V
    • 1450 V
    • 1550 V
    • 158 V
    • 1650 V
    • 1750 V
    • 176 V
    • 1850 V
    • 193 V
    • 1950 V
    • 211 V
    • 2150 V
    • 2250 V
    • 228 V
    • 2350 V
    • 2450 V
    • 246 V
    • 2500 V
    • 2900 V
    • 3700 V
    • 3900 V
    • 4100 V
    • 550 V
    • 750 V
    • 850 V
    • 88 V
    • 950 V
Terminal Form
    • C BEND
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
No. of Elements
    • 1
Repetitive Peak Reverse Voltage
    • 1 V
    • 108 V
    • 117 V
    • 135 V
    • 140 V
    • 144 V
    • 158 V
    • 162 V
    • 176 V
    • 180 V
    • 193 V
    • 198 V
    • 211 V
    • 216 V
    • 228 V
    • 243 V
    • 246 V
    • 56 V
    • 61 V
    • 67 V
    • 74 V
    • 82 V
    • 90 V
    • 99 V
No. of Terminals
    • 2
Sub-Category
    • Breakover Diodes
    • Silicon Surge Protectors
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 70 Cel
    • 85 Cel
Minimum Operating Temperature
    • -40 Cel
    • 0 Cel
Terminal Finish
    • TIN
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • O-GALF-W2
    • O-LALF-W2
    • R-PDSO-C2
    • R-PSIP-T2
Qualification
    • Not Qualified
Maximum Holding Current
    • 120 mA
    • 150 mA
    • 180 mA
    • 30 mA
Maximum Non Repetitive Peak Forward Current
    • 15 A
    • 200 A
    • 30 A
    • 40 A
JESD-609 Code
    • e0
    • e3
Maximum Time At Peak Reflow Temperature (s)
    • NOT SPECIFIED
Maximum Breakdown Voltage
    • 100 V
    • 1000 V
    • 101 V
    • 102 V
    • 103 V
    • 104 V
    • 105 V
    • 106 V
    • 107 V
    • 108 V
    • 109 V
    • 110 V
    • 111 V
    • 112 V
    • 113 V
    • 114 V
    • 115 V
    • 116 V
    • 117 V
    • 118 V
    • 119 V
    • 1200 V
    • 121 V
    • 122 V
    • 123 V
    • 124 V
    • 125 V
    • 126 V
    • 127 V
    • 128 V
    • 129 V
    • 130 V
    • 131 V
    • 132 V
    • 133 V
    • 134 V
    • 135 V
    • 136 V
    • 137 V
    • 138 V
    • 139 V
    • 140 V
    • 1400 V
    • 141 V
    • 142 V
    • 143 V
    • 144 V
    • 145 V
    • 146 V
    • 147 V
    • 148 V
    • 149 V
    • 150 V
    • 1500 V
    • 151 V
    • 152 V
    • 153 V
    • 154 V
    • 155 V
    • 156 V
    • 157 V
    • 158 V
    • 159 V
    • 160 V
    • 1600 V
    • 161 V
    • 162 V
    • 163 V
    • 164 V
    • 165 V
    • 166 V
    • 167 V
    • 168 V
    • 169 V
    • 170 V
    • 1700 V
    • 171 V
    • 172 V
    • 173 V
    • 174 V
    • 175 V
    • 176 V
    • 177 V
    • 178 V
    • 179 V
    • 180 V
    • 1800 V
    • 181 V
    • 182 V
    • 183 V
    • 184 V
    • 185 V
    • 186 V
    • 187 V
    • 188 V
    • 189 V
    • 190 V
    • 1900 V
    • 191 V
    • 192 V
    • 193 V
    • 194 V
    • 195 V
    • 196 V
    • 197 V
    • 198 V
    • 199 V
    • 200 V
    • 2000 V
    • 201 V
    • 202 V
    • 203 V
    • 204 V
    • 205 V
    • 206 V
    • 207 V
    • 208 V
    • 209 V
    • 210 V
    • 211 V
    • 212 V
    • 213 V
    • 214 V
    • 215 V
    • 216 V
    • 217 V
    • 218 V
    • 219 V
    • 220 V
    • 2200 V
    • 221 V
    • 222 V
    • 223 V
    • 224 V
    • 225 V
    • 226 V
    • 227 V
    • 228 V
    • 229 V
    • 230 V
    • 2300 V
    • 231 V
    • 232 V
    • 233 V
    • 234 V
    • 235 V
    • 236 V
    • 237 V
    • 238 V
    • 239 V
    • 240 V
    • 2400 V
    • 241 V
    • 242 V
    • 243 V
    • 244 V
    • 245 V
    • 246 V
    • 247 V
    • 248 V
    • 249 V
    • 250 V
    • 2500 V
    • 251 V
    • 252 V
    • 253 V
    • 254 V
    • 255 V
    • 256 V
    • 257 V
    • 258 V
    • 259 V
    • 260 V
    • 2600 V
    • 261 V
    • 262 V
    • 263 V
    • 264 V
    • 265 V
    • 266 V
    • 267 V
    • 268 V
    • 269 V
    • 270 V
    • 271 V
    • 272 V
    • 273 V
    • 274 V
    • 275 V
    • 276 V
    • 277 V
    • 278 V
    • 279 V
    • 280 V
    • 289 V
    • 292 V
    • 293 V
    • 3000 V
    • 314 V
    • 320 V
    • 325 V
    • 360 V
    • 3800 V
    • 4000 V
    • 4200 V
    • 50 V
    • 600 V
    • 700 V
    • 75 V
    • 800 V
    • 82 V
    • 85 V
    • 90 V
    • 900 V
    • 91 V
    • 99 V
Peak Reflow Temperature (C)
    • NOT SPECIFIED
Reset All
Part RoHS Manufacturer Trigger Device Type Package Style (Meter) Surface Mount Terminal Position Configuration Case Connection Package Body Material Nominal Holding Current Minimum Breakdown Voltage Terminal Form Package Shape No. of Elements Repetitive Peak Reverse Voltage No. of Terminals Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Qualification Maximum Holding Current Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Maximum Breakdown Voltage Peak Reflow Temperature (C)

TPD110A18

STMicroelectronics

NO

99 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

180 mA

e0

147 V

TPD82A12

STMicroelectronics

NO

74 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

120 mA

e0

109 V

TPC110B18

STMicroelectronics

NO

99 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

180 mA

e0

133 V

TPD180A12

STMicroelectronics

NO

162 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

120 mA

e0

240 V

TPD130B18

STMicroelectronics

NO

117 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

180 mA

e0

157 V

TPD180B18

STMicroelectronics

NO

162 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

180 mA

e0

217 V

TPD150A18

STMicroelectronics

NO

135 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

180 mA

e0

200 V

TPC220B12

STMicroelectronics

NO

198 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

120 mA

e0

265 V

TPC240A18

STMicroelectronics

NO

216 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

180 mA

e0

320 V

TPC62B12

STMicroelectronics

NO

56 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

120 mA

e0

75 V

TPC68A12

STMicroelectronics

NO

61 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

120 mA

e0

90 V

TPD160A12

STMicroelectronics

NO

144 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

120 mA

e0

213 V

TPC200B12

STMicroelectronics

NO

180 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

120 mA

e0

241 V

TPC130B12

STMicroelectronics

NO

117 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

120 mA

e0

157 V

TPD100B12

STMicroelectronics

NO

90 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

120 mA

e0

121 V

TPD120A12

STMicroelectronics

NO

108 V

Breakover Diodes

70 Cel

0 Cel

Tin/Lead (Sn/Pb)

120 mA

e0

160 V

BR211-142

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

142 V

BR211-212

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

212 V

BR211-137

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

137 V

BR211-163

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

163 V

BR211-152

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

152 V

BR211-182

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

182 V

BR211-157

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

157 V

BR211-135

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

135 V

BR211-180

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

CERAMIC, GLASS-SEALED

150 mA

158 V

WIRE

ROUND

1

2

O-GALF-W2

Not Qualified

15 A

202 V

BR211-122

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

122 V

BR211-202

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

202 V

BR211-102

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

102 V

BR211-105

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

105 V

BR211-280T/R

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

CERAMIC, GLASS-SEALED

150 mA

246 V

WIRE

ROUND

1

246 V

2

Silicon Surge Protectors

70 Cel

O-GALF-W2

Not Qualified

150 mA

15 A

314 V

BR211-143

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

143 V

BR211-171

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

171 V

BR211-250

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

250 V

BR211-161

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

161 V

BR211-219

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

219 V

BR211-119

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

119 V

BR211-263

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

263 V

BR211-238

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

238 V

BR211-247

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

247 V

BR211-203

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

203 V

BR211-160T/R

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

CERAMIC, GLASS-SEALED

150 mA

140 V

WIRE

ROUND

1

140 V

2

Silicon Surge Protectors

70 Cel

O-GALF-W2

Not Qualified

150 mA

15 A

180 V

BR211-245

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

245 V

BR211-109

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

109 V

BR211-229

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

229 V

BR211-223

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

223 V

BR211-222

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

222 V

BR211-204

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

204 V

BR211-208

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

208 V

Breakover Diodes

Breakover diodes, also known as break-down diodes or reference diodes, are two-terminal semiconductor devices that are designed to conduct current when a specific voltage is exceeded.

Breakover diodes have a highly doped p-n junction that allows current to flow in the reverse direction once the voltage across the diode reaches a certain threshold value. Once this voltage is exceeded, the breakover diode begins to conduct in the reverse direction, providing a low-resistance path for current flow.

Breakover diodes are commonly used in electronic circuits to protect sensitive components from voltage spikes and transients. They are often used in circuits that operate in harsh environments or that are subject to voltage surges, such as in power supplies and motor control circuits.

Breakover diodes can be used in conjunction with other components, such as capacitors and resistors, to form voltage clamping circuits that protect sensitive components from overvoltage conditions. In these circuits, the breakover diode conducts the excess voltage away from the sensitive component and dissipates it as heat.