NO Programmable Unijunction Transistors (UJT) 35

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Part	Manufacturer	Trigger Device Type	Package Style (Meter)	Surface Mount	Terminal Position	Configuration	Case Connection	Maximum On-state Voltage	Package Body Material	Terminal Form	Package Shape	Maximum On-state Current	No. of Elements	Maximum Anode To Cathode Voltage	No. of Terminals	Sub-Category	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Minimum Valley Current	Qualification	Maximum Power Dissipation	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Peak Current
2N6027	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	100 Cel	-50 Cel	Tin/Lead (Sn/Pb)	O-PBCY-T3	70 uA	Not Qualified	.3 W		TO-92	e0	30	235	2 uA
2N6027G	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	125 Cel	-50 Cel	TIN SILVER COPPER	O-PBCY-T3	70 uA	Not Qualified	.3 W		TO-92	e1		260	2 uA
2N6027RLRAG	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	125 Cel	-50 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	O-PBCY-T3	70 uA	Not Qualified	.3 W		TO-92	e1	40	260	2 uA
2N6027PBFREE	Central Semiconductor	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND		1	40 V	3		100 Cel	-50 Cel	MATTE TIN OVER NICKEL	O-PBCY-T3	70 uA				TO-92	e3			2 uA
2N6027RL1G	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	125 Cel	-50 Cel	TIN SILVER COPPER	O-PBCY-T3	70 uA	Not Qualified	.3 W	EUROPEAN PART NUMBER	TO-92	e1		260	2 uA
2N6027RLRA	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	100 Cel	-50 Cel	TIN LEAD	O-PBCY-T3	70 uA	Not Qualified	.3 W		TO-92	e0		235	2 uA
NTE6402	Nte Electronics	PROGRAMMABLE UJT		NO				1.6 V								Programmable Unijunction Transistors							.3 W
2N6028RLRAG	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	125 Cel	-50 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	O-PBCY-T3	25 uA	Not Qualified	.3 W		TO-92	e1	40	260	.15 uA
2N6028PBFREE	Central Semiconductor	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND		1	40 V	3		100 Cel	-50 Cel	MATTE TIN	O-PBCY-T3	25 uA				TO-92	e3		260	.15 uA
2N6028RLRMG	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	125 Cel	-50 Cel	TIN SILVER COPPER	O-PBCY-T3	25 uA	Not Qualified	.3 W		TO-92	e1		260	.15 uA
2N6028RLRPG	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	125 Cel	-50 Cel	TIN SILVER COPPER	O-PBCY-T3	25 uA	Not Qualified	.3 W		TO-92	e1		260	.15 uA
A5T6117	Texas Instruments	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	WIRE	ROUND	.2 A	1	40 V	3	Programmable Unijunction Transistors	150 Cel	-65 Cel		O-PBCY-W3	50 uA	Not Qualified	.3 W		TO-18		NOT SPECIFIED	NOT SPECIFIED	.3 uA
A7T6028	Texas Instruments	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	WIRE	ROUND		1	40 V	3	Programmable Unijunction Transistors				O-PBCY-W3	25 uA	Not Qualified	.3 W		TO-92		NOT SPECIFIED	NOT SPECIFIED	.15 uA
2N6117	Texas Instruments	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE	ANODE		METAL	WIRE	ROUND		1	40 V	3					O-MBCY-W3	50 uA	Not Qualified			TO-18				.3 uA
A5T6116	Texas Instruments	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	WIRE	ROUND	.2 A	1	40 V	3	Programmable Unijunction Transistors	150 Cel	-65 Cel		O-PBCY-W3	70 uA	Not Qualified	.3 W		TO-18		NOT SPECIFIED	NOT SPECIFIED	2 uA
A5T6118	Texas Instruments	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	WIRE	ROUND	.2 A	1	40 V	3	Programmable Unijunction Transistors	150 Cel	-65 Cel		O-PBCY-W3	50 uA	Not Qualified	.3 W		TO-18		NOT SPECIFIED	NOT SPECIFIED	.15 uA
2N6116	Texas Instruments	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE	ANODE		METAL	WIRE	ROUND		1	40 V	3					O-MBCY-W3	70 uA	Not Qualified			TO-18				2 uA
2N6118	Texas Instruments	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE	ANODE		METAL	WIRE	ROUND		1	40 V	3					O-MBCY-W3	50 uA	Not Qualified			TO-18				.15 uA
A7T6027	Texas Instruments	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	WIRE	ROUND		1	40 V	3	Programmable Unijunction Transistors				O-PBCY-W3	70 uA	Not Qualified	.3 W		TO-92		NOT SPECIFIED	NOT SPECIFIED	2 uA
2N6027RLRP	Onsemi	PROGRAMMABLE UJT		NO				1.6 V				.15 A				Programmable Unijunction Transistors	100 Cel	-50 Cel	Tin/Lead (Sn/Pb)				.3 W			e0
2N6028RLRP	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	100 Cel	-50 Cel	TIN LEAD	O-PBCY-T3	25 uA	Not Qualified	.3 W		TO-92	e0		235	.15 uA
2N6028RLRA	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	100 Cel	-50 Cel	TIN LEAD	O-PBCY-T3	25 uA	Not Qualified	.3 W		TO-92	e0		235	.15 uA
2N6028RLRM	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	100 Cel	-50 Cel	Tin/Lead (Sn/Pb)	O-PBCY-T3	25 uA	Not Qualified	.3 W		TO-92	e0	30	235	.15 uA
2N6027RL1	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	100 Cel	-50 Cel	TIN LEAD	O-PBCY-T3	70 uA	Not Qualified	.3 W	EUROPEAN PART NUMBER	TO-92	e0		235	2 uA
2N6028G	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	125 Cel	-50 Cel	TIN SILVER COPPER	O-PBCY-T3	25 uA	Not Qualified	.3 W		TO-92	e1		260	.15 uA
2N6028	Onsemi	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	100 Cel	-50 Cel	Tin/Lead (Sn/Pb)	O-PBCY-T3	25 uA	Not Qualified	.3 W		TO-92	e0	30	235	.15 uA
2N4870/PH	NXP Semiconductors	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND		1		3					O-PBCY-T3	2 uA	Not Qualified			TO-92				5 uA
BRY56A	NXP Semiconductors	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.175 A	1	1.4 V	3	Programmable Unijunction Transistors	150 Cel	-65 Cel		O-PBCY-T3	1 uA	Not Qualified	.3 W		TO-92				.06 uA
BRY56	NXP Semiconductors	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND		1	1.4 V	3		150 Cel			O-PBCY-T3	1 uA	Not Qualified			TO-92				.06 uA
2N6028/PH	NXP Semiconductors	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND		1		3					O-PBCY-T3	25 uA	Not Qualified			TO-92				1 uA
2N6027/PH	NXP Semiconductors	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND		1		3					O-PBCY-T3	70 uA	Not Qualified			TO-92				5 uA
BRY56C	Infineon Technologies	PROGRAMMABLE UJT		NO								.175 A				Programmable Unijunction Transistors	150 Cel						.3 W
BRY56B	Infineon Technologies	PROGRAMMABLE UJT		NO								.175 A				Programmable Unijunction Transistors	150 Cel						.3 W
TN41A	Toshiba	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	125 Cel	-50 Cel	Tin/Lead (Sn/Pb)	O-PBCY-T3	70 uA	Not Qualified	.3 W		TO-92	e0			2 uA
TN41B	Toshiba	PROGRAMMABLE UJT	CYLINDRICAL	NO	BOTTOM	SINGLE			PLASTIC/EPOXY	THROUGH-HOLE	ROUND	.15 A	1	40 V	3	Programmable Unijunction Transistors	125 Cel	-50 Cel	TIN LEAD	O-PBCY-T3	25 uA	Not Qualified	.3 W		TO-92	e0			.15 uA

Programmable Unijunction Transistors (UJT)

Programmable Unijunction Transistors (PUT) are electronic devices that are similar to Unijunction Transistors (UJT) but have an additional gate terminal that allows for greater control over the triggering and operation of the device.

The PUT consists of a bar of lightly doped n-type silicon with a p-type material implanted in the center, forming two p-n junctions. The two outer ends of the n-type bar are the emitter (E1) and collector (C1) terminals, while the p-type material in the center is the base (B1) terminal. A second gate (G) terminal is connected to the p-type material in the center.

The PUT works by controlling the flow of current between the emitter and collector terminals through the base region. When a voltage is applied to the gate terminal, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the emitter and collector.

PUTs are often used in timing and oscillation circuits, and as voltage-controlled switches. In oscillator circuits, the PUT is used to provide a timing signal that can be used to trigger other devices, such as thyristors or triacs. In switching applications, the PUT is used to control the turn-on and turn-off of other devices, such as transistors or SCRs.