YES Programmable Unijunction Transistors (UJT) 6
| Part | RoHS | Manufacturer | Trigger Device Type | Package Style (Meter) | Surface Mount | Terminal Position | Configuration | Case Connection | Maximum On-state Voltage | Package Body Material | Terminal Form | Package Shape | Maximum On-state Current | No. of Elements | Maximum Anode To Cathode Voltage | No. of Terminals | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Minimum Valley Current | Qualification | Maximum Power Dissipation | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Peak Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Central Semiconductor |
PROGRAMMABLE UJT |
YES |
.15 A |
Programmable Unijunction Transistors |
100 Cel |
-50 Cel |
.35 W |
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|
Texas Instruments |
PROGRAMMABLE UJT |
YES |
.15 A |
Programmable Unijunction Transistors |
150 Cel |
-65 Cel |
.3 W |
|||||||||||||||||||||||
|
Texas Instruments |
PROGRAMMABLE UJT |
YES |
.15 A |
Programmable Unijunction Transistors |
150 Cel |
-65 Cel |
.3 W |
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|
NXP Semiconductors |
PROGRAMMABLE UJT |
SMALL OUTLINE |
YES |
DUAL |
SINGLE |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
3 |
150 Cel |
R-PDSO-G3 |
1 uA |
Not Qualified |
.06 uA |
|||||||||||||||
|
NXP Semiconductors |
PROGRAMMABLE UJT |
SMALL OUTLINE |
YES |
DUAL |
SINGLE |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
.175 A |
1 |
3 |
Programmable Unijunction Transistors |
150 Cel |
-65 Cel |
R-PDSO-G3 |
1 uA |
Not Qualified |
.25 W |
.06 uA |
|||||||||||
|
NXP Semiconductors |
PROGRAMMABLE UJT |
SMALL OUTLINE |
YES |
DUAL |
SINGLE |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
3 |
150 Cel |
R-PDSO-G3 |
1 uA |
Not Qualified |
.06 uA |
Programmable Unijunction Transistors (PUT) are electronic devices that are similar to Unijunction Transistors (UJT) but have an additional gate terminal that allows for greater control over the triggering and operation of the device.
The PUT consists of a bar of lightly doped n-type silicon with a p-type material implanted in the center, forming two p-n junctions. The two outer ends of the n-type bar are the emitter (E1) and collector (C1) terminals, while the p-type material in the center is the base (B1) terminal. A second gate (G) terminal is connected to the p-type material in the center.
The PUT works by controlling the flow of current between the emitter and collector terminals through the base region. When a voltage is applied to the gate terminal, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the emitter and collector.
PUTs are often used in timing and oscillation circuits, and as voltage-controlled switches. In oscillator circuits, the PUT is used to provide a timing signal that can be used to trigger other devices, such as thyristors or triacs. In switching applications, the PUT is used to control the turn-on and turn-off of other devices, such as transistors or SCRs.