COMMON ANODE, 2 ELEMENTS Silicon Controlled Rectifiers (SCR) 396

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Part RoHS Manufacturer Trigger Device Type Package Style (Meter) Surface Mount Terminal Position Configuration Case Connection Maximum On-state Voltage Package Body Material Maximum DC Gate Trigger Current Non Repetitive Peak On-state Current Terminal Form Package Shape Maximum On-state Current No. of Elements Maximum Leakage Current Repetitive Peak Reverse Voltage Maximum Repetitive Peak Off-state Leakage Current No. of Terminals Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum RMS On-state Current JESD-30 Code Moisture Sensitivity Level (MSL) Maximum DC Gate Trigger Voltage Qualification Repetitive Peak Off-state Voltage Minimum Critical Rate of Rise of Off-state Voltage Maximum Holding Current Additional Features Nominal Circuit Commutated Turn-off Time JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

TT101F10KFC-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2400 A

101 A

2

1000 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT81F02KEM-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2200 A

81 A

2

200 V

Silicon Controlled Rectifiers

125 Cel

TT71F08KSM-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2.6 V

150 mA

2100 A

71 A

2

30 mA

800 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2 V

250 mA

TT71F11KEC-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

1100 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT71F13KEM-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

1300 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT101F08KEL-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2400 A

101 A

2

800 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT71F14KEC-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

1400 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT71F13KEB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

1300 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT310N20KOF-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2.22 V

250 mA

9000 A

310 A

2

80 mA

2000 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

1.5 V

300 mA

TT111F06KCL-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2600 A

111 A

2

600 V

Silicon Controlled Rectifiers

125 Cel

TT101F10KEM-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2400 A

101 A

2

1000 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT101F10KFB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2400 A

101 A

2

1000 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT71F11KSM-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2.6 V

150 mA

2100 A

71 A

2

30 mA

1100 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2 V

250 mA

TT71F11KEB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

1100 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT101F08KFC-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2400 A

101 A

2

800 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT111F04KEC-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2600 A

111 A

2

400 V

Silicon Controlled Rectifiers

125 Cel

TT101F11KSM-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2.1 V

150 mA

2400 A

101 A

2

30 mA

1100 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2 V

250 mA

TT71F13KFB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

1300 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT101F11KEM-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2400 A

101 A

2

1100 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT81F06KDC-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2200 A

81 A

2

600 V

Silicon Controlled Rectifiers

125 Cel

TT71F08KFM-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

800 V

Silicon Controlled Rectifiers

125 Cel

TT101F14KEL-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2400 A

101 A

2

1400 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT101F13KSC-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2.1 V

150 mA

2400 A

101 A

2

30 mA

1300 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2 V

250 mA

TT111F02KEB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2600 A

111 A

2

200 V

Silicon Controlled Rectifiers

125 Cel

TT71F10KEC-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

1000 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT500N14KOF-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

14000 A

500 A

2

1400 V

Silicon Controlled Rectifiers

125 Cel

TT81F04KEC-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2200 A

81 A

2

400 V

Silicon Controlled Rectifiers

125 Cel

TT111F02KDB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2600 A

111 A

2

200 V

Silicon Controlled Rectifiers

125 Cel

TT71F08KEB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

800 V

Silicon Controlled Rectifiers

125 Cel

TT71F13KFM-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

1300 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT111F02KCB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2600 A

111 A

2

200 V

Silicon Controlled Rectifiers

125 Cel

TT81F08KCL-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2200 A

81 A

2

800 V

Silicon Controlled Rectifiers

125 Cel

TT111F08KCC-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2600 A

111 A

2

800 V

Silicon Controlled Rectifiers

125 Cel

TT101F13KSL-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2.1 V

150 mA

2400 A

101 A

2

30 mA

1300 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2 V

250 mA

TT71F12KSM-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2.6 V

150 mA

2100 A

71 A

2

30 mA

1200 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2 V

250 mA

TT71F14KSL-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2.6 V

150 mA

2100 A

71 A

2

1400 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2 V

250 mA

TT71F12KSB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2.6 V

150 mA

2100 A

71 A

2

30 mA

1200 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2 V

250 mA

TT71F13KFC-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

1300 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT81F04KCB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2200 A

81 A

2

400 V

Silicon Controlled Rectifiers

125 Cel

TT81F02KDB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2200 A

81 A

2

200 V

Silicon Controlled Rectifiers

125 Cel

TT71F14KFC-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

1400 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT71F11KFB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

1100 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT101F12KSM-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2.1 V

150 mA

2400 A

101 A

2

30 mA

1200 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2 V

250 mA

TT101F12KEL-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2400 A

101 A

2

1200 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT71F14KEM-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2100 A

71 A

2

1400 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT111F06KEB-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2600 A

111 A

2

600 V

Silicon Controlled Rectifiers

125 Cel

TT101F08KFL-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2400 A

101 A

2

800 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TT71F10KSL-A

Infineon Technologies

SCR

COMMON ANODE, 2 ELEMENTS

2.6 V

150 mA

2100 A

71 A

2

30 mA

1000 V

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2 V

250 mA

Silicon Controlled Rectifiers (SCR)

Silicon Controlled Rectifiers (SCRs) are semiconductor devices that are used to control the flow of electrical current in high-power applications. They are also known as thyristors, which are a family of devices that includes SCRs, triacs, and diacs.

SCRs consist of four layers of alternating p-type and n-type semiconductor material, forming three p-n junctions. The device has three terminals: the anode (A), the cathode (K), and the gate (G). The SCR is designed to conduct current only in one direction, from the anode to the cathode.

SCRs work by applying a positive voltage to the anode, which causes current to flow into the device. The gate terminal is used to control the flow of current by applying a small voltage pulse to trigger the device. Once triggered, the SCR conducts current until the voltage across the device drops below a certain level, at which point it turns off.

SCRs are commonly used in high-power applications such as motor control, lighting control, and power supplies. They are often used in conjunction with other components such as capacitors, inductors, and diodes to form complete electronic circuits.

Proper selection and use of SCRs are critical to ensure safe and reliable operation of power control circuits. Factors such as the maximum voltage rating, maximum current rating, and operating temperature range should be considered when selecting an SCR for a particular application.