SINGLE Silicon Controlled Rectifiers (SCR) 2,400+

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Part RoHS Manufacturer Trigger Device Type Package Style (Meter) Surface Mount Terminal Position Configuration Case Connection Maximum On-state Voltage Package Body Material Maximum DC Gate Trigger Current Non Repetitive Peak On-state Current Terminal Form Package Shape Maximum On-state Current No. of Elements Maximum Leakage Current Repetitive Peak Reverse Voltage Maximum Repetitive Peak Off-state Leakage Current No. of Terminals Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum RMS On-state Current JESD-30 Code Moisture Sensitivity Level (MSL) Maximum DC Gate Trigger Voltage Qualification Repetitive Peak Off-state Voltage Minimum Critical Rate of Rise of Off-state Voltage Maximum Holding Current Additional Features Nominal Circuit Commutated Turn-off Time JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

BT151B-650R/T3

NXP Semiconductors

SCR

SMALL OUTLINE

YES

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

15 mA

GULL WING

RECTANGULAR

1

650 V

500 uA

2

125 Cel

12 A

R-PSSO-G2

1.5 V

Not Qualified

650 V

50 V/us

20 mA

70 us

BT151X-800

NXP Semiconductors

SCR

FLANGE MOUNT

NO

SINGLE

SINGLE

ISOLATED

PLASTIC/EPOXY

15 mA

100 A

THROUGH-HOLE

RECTANGULAR

5.7 A

1

.5 mA

800 V

500 uA

3

Silicon Controlled Rectifiers

125 Cel

12 A

R-PSFM-T3

1.5 V

Not Qualified

800 V

50 V/us

20 mA

70 us

BT151S-650L,118

NXP Semiconductors

SCR

SMALL OUTLINE

YES

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

5 mA

132 A

GULL WING

RECTANGULAR

7.5 A

1

.5 mA

650 V

2

Silicon Controlled Rectifiers

125 Cel

TIN

12 A

R-PSSO-G2

1

1.5 V

Not Qualified

650 V

50 V/us

20 mA

70 us

TO-252AA

e3

BT152-400R

NXP Semiconductors

SCR

FLANGE MOUNT

NO

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

32 mA

200 A

THROUGH-HOLE

RECTANGULAR

13 A

1

1 mA

450 V

1000 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

20 A

R-PSFM-T3

1.5 V

Not Qualified

450 V

200 V/us

60 mA

70 us

TO-220AB

e3

BT149B

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

200 V

100 uA

3

Silicon Controlled Rectifiers

125 Cel

MATTE TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

200 V

500 V/us

5 mA

SENSITIVE GATE

100 us

e3

BT149D

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

400 V

100 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

400 V

500 V/us

5 mA

SENSITIVE GATE

100 us

e3

30

260

BT150S-500R

NXP Semiconductors

SCR

SMALL OUTLINE

YES

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

.2 mA

35 A

GULL WING

RECTANGULAR

2.5 A

1

.5 mA

500 V

500 uA

2

Silicon Controlled Rectifiers

125 Cel

4 A

R-PSSO-G2

1.5 V

Not Qualified

500 V

6 mA

SENSITIVE GATE

100 us

BT145-800R,127

NXP Semiconductors

SCR

FLANGE MOUNT

NO

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

35 mA

300 A

THROUGH-HOLE

RECTANGULAR

16 A

1

1 mA

800 V

1000 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

25 A

R-PSFM-T3

1 V

Not Qualified

800 V

200 V/us

60 mA

70 us

TO-220AB

e3

BT150-500R

NXP Semiconductors

SCR

FLANGE MOUNT

NO

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

.2 mA

25 A

THROUGH-HOLE

RECTANGULAR

2.5 A

1

.5 mA

500 V

500 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

4 A

R-PSFM-T3

1.5 V

Not Qualified

500 V

6 mA

SENSITIVE GATE

100 us

TO-220AB

e3

BT148M-600Z

NXP Semiconductors

SCR

SMALL OUTLINE

YES

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

.2 mA

35 A

GULL WING

RECTANGULAR

2.5 A

1

.5 mA

600 V

500 uA

2

Silicon Controlled Rectifiers

125 Cel

4 A

R-PSSO-G2

1.5 V

Not Qualified

600 V

6 mA

SENSITIVE GATE

100 us

BT152X-800R,127

NXP Semiconductors

SCR

FLANGE MOUNT

NO

SINGLE

SINGLE

ISOLATED

PLASTIC/EPOXY

32 mA

200 A

THROUGH-HOLE

RECTANGULAR

13 A

1

1 mA

800 V

1000 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

20 A

R-PSFM-T3

1.5 V

Not Qualified

800 V

200 V/us

60 mA

70 us

e3

BT151U-800C

NXP Semiconductors

SCR

IN-LINE

NO

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

15 mA

110 A

THROUGH-HOLE

RECTANGULAR

7.5 A

1

.5 mA

800 V

3

Silicon Controlled Rectifiers

150 Cel

-40 Cel

TIN

12 A

R-PSIP-T3

1.5 V

Not Qualified

800 V

50 V/us

20 mA

70 us

TO-251

e3

BT150S-500R/T3

NXP Semiconductors

SCR

SMALL OUTLINE

YES

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

.2 mA

GULL WING

RECTANGULAR

1

500 V

500 uA

2

125 Cel

4 A

R-PSSO-G2

1.5 V

Not Qualified

500 V

6 mA

SENSITIVE GATE

100 us

BT149B,126

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

200 V

3

Silicon Controlled Rectifiers

125 Cel

MATTE TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

200 V

500 V/us

5 mA

SENSITIVE GATE

100 us

TO-92

e3

BT152B-600R

NXP Semiconductors

SCR

SMALL OUTLINE

YES

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

32 mA

200 A

GULL WING

RECTANGULAR

13 A

1

1 mA

650 V

1000 uA

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TIN

20 A

R-PSSO-G2

1

1.5 V

Not Qualified

650 V

200 V/us

60 mA

70 us

e3

BT150-500R,127

NXP Semiconductors

SCR

FLANGE MOUNT

NO

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

.2 mA

25 A

THROUGH-HOLE

RECTANGULAR

2.5 A

1

.5 mA

500 V

500 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

4 A

R-PSFM-T3

1.5 V

Not Qualified

500 V

6 mA

SENSITIVE GATE

100 us

TO-220AB

e3

BT151B-800RT/R

NXP Semiconductors

SCR

SMALL OUTLINE

YES

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

15 mA

GULL WING

RECTANGULAR

1

800 V

500 uA

2

125 Cel

12 A

R-PSSO-G2

1.5 V

Not Qualified

800 V

50 V/us

20 mA

70 us

BT149G,412

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

600 V

100 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

600 V

500 V/us

5 mA

SENSITIVE GATE

100 us

e3

30

260

BT151X-500C

NXP Semiconductors

SCR

FLANGE MOUNT

NO

SINGLE

SINGLE

ISOLATED

PLASTIC/EPOXY

15 mA

110 A

THROUGH-HOLE

RECTANGULAR

7.5 A

1

.5 mA

500 V

3

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TIN

12 A

R-PSFM-T3

1.5 V

Not Qualified

500 V

50 V/us

20 mA

70 us

e3

BT151X-650R,127

NXP Semiconductors

SCR

FLANGE MOUNT

NO

SINGLE

SINGLE

ISOLATED

PLASTIC/EPOXY

15 mA

132 A

THROUGH-HOLE

RECTANGULAR

7.5 A

1

.5 mA

650 V

3

Silicon Controlled Rectifiers

150 Cel

-40 Cel

TIN

9 A

R-PSFM-T3

1.5 V

Not Qualified

650 V

50 V/us

20 mA

70 us

e3

BT145B-500R

NXP Semiconductors

SCR

SMALL OUTLINE

YES

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

35 mA

330 A

GULL WING

RECTANGULAR

16 A

1

1 mA

500 V

2

Silicon Controlled Rectifiers

150 Cel

-40 Cel

25 A

R-PSSO-G2

1 V

Not Qualified

500 V

200 V/us

60 mA

70 us

BT152B-400R

NXP Semiconductors

SCR

SMALL OUTLINE

YES

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

32 mA

200 A

GULL WING

RECTANGULAR

13 A

1

1 mA

450 V

1000 uA

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TIN

20 A

R-PSSO-G2

1

1.5 V

Not Qualified

450 V

200 V/us

60 mA

70 us

e3

BT151S-650R,118

NXP Semiconductors

SCR

SMALL OUTLINE

YES

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

15 mA

100 A

GULL WING

RECTANGULAR

7.5 A

1

.5 mA

650 V

500 uA

2

Silicon Controlled Rectifiers

125 Cel

TIN

12 A

R-PSSO-G2

1

1.5 V

Not Qualified

650 V

50 V/us

20 mA

70 us

TO-252AA

e3

BT151B-650RT/R

NXP Semiconductors

SCR

SMALL OUTLINE

YES

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

15 mA

GULL WING

RECTANGULAR

1

650 V

500 uA

2

125 Cel

12 A

R-PSSO-G2

1.5 V

Not Qualified

650 V

50 V/us

20 mA

70 us

BT151X-500R

NXP Semiconductors

SCR

FLANGE MOUNT

NO

SINGLE

SINGLE

ISOLATED

PLASTIC/EPOXY

15 mA

132 A

THROUGH-HOLE

RECTANGULAR

7.5 A

1

.5 mA

500 V

3

Silicon Controlled Rectifiers

150 Cel

-40 Cel

TIN

9 A

R-PSFM-T3

1.5 V

Not Qualified

500 V

50 V/us

20 mA

70 us

e3

BT148W-400RT/R

NXP Semiconductors

SCR

SMALL OUTLINE

YES

DUAL

SINGLE

ANODE

PLASTIC/EPOXY

.2 mA

GULL WING

RECTANGULAR

1

400 V

500 uA

4

125 Cel

1 A

R-PDSO-G4

1.5 V

Not Qualified

400 V

6 mA

SENSITIVE GATE, LOGIC LEVEL COMPATIBLE

100 us

BT151M-800R

NXP Semiconductors

SCR

SMALL OUTLINE

YES

SINGLE

SINGLE

ANODE

1.75 V

PLASTIC/EPOXY

15 mA

100 A

GULL WING

RECTANGULAR

7.5 A

1

.5 mA

800 V

500 uA

2

125 Cel

12 A

R-PSSO-G2

1.5 V

Not Qualified

800 V

50 V/us

20 mA

70 us

BT151-800C,127

NXP Semiconductors

SCR

FLANGE MOUNT

NO

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

15 mA

110 A

THROUGH-HOLE

RECTANGULAR

7.5 A

1

.5 mA

800 V

3

Silicon Controlled Rectifiers

125 Cel

-40 Cel

TIN

12 A

R-PSFM-T3

1.5 V

Not Qualified

800 V

50 V/us

20 mA

70 us

TO-220AB

e3

BT148-500R

NXP Semiconductors

SCR

IN-LINE

NO

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

.2 mA

25 A

THROUGH-HOLE

RECTANGULAR

2.5 A

1

.5 mA

500 V

500 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

4 A

R-PSIP-T3

1.5 V

Not Qualified

500 V

5 V/us

6 mA

SENSITIVE GATE

100 us

e3

BT152X-400R,127

NXP Semiconductors

SCR

FLANGE MOUNT

NO

SINGLE

SINGLE

ISOLATED

PLASTIC/EPOXY

32 mA

200 A

THROUGH-HOLE

RECTANGULAR

13 A

1

1 mA

450 V

1000 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

20 A

R-PSFM-T3

1.5 V

Not Qualified

450 V

200 V/us

60 mA

70 us

e3

BT151U-650C,127

NXP Semiconductors

SCR

IN-LINE

NO

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

15 mA

110 A

THROUGH-HOLE

RECTANGULAR

7.5 A

1

.5 mA

650 V

3

Silicon Controlled Rectifiers

150 Cel

-40 Cel

TIN

12 A

R-PSIP-T3

1.5 V

Not Qualified

650 V

50 V/us

20 mA

70 us

TO-251

e3

BT151-1000RT,127

NXP Semiconductors

SCR

FLANGE MOUNT

NO

SINGLE

SINGLE

ANODE

PLASTIC/EPOXY

15 mA

131 A

THROUGH-HOLE

RECTANGULAR

7.5 A

1

2.5 mA

1000 V

3

Silicon Controlled Rectifiers

150 Cel

-40 Cel

MATTE TIN

12 A

R-PSFM-T3

1.5 V

Not Qualified

1000 V

20 mA

70 us

TO-220AB

e3

2N881/PH

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

METAL

.2 mA

WIRE

ROUND

1

200 V

3

O-MBCY-W3

Not Qualified

TO-18

T1869N18TOF

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

CERAMIC, METAL-SEALED COFIRED

300 mA

40000 A

UNSPECIFIED

ROUND

1

250 mA

1800 V

4

Silicon Controlled Rectifiers

125 Cel

-40 Cel

4100 A

O-CXDB-X4

2.5 V

Not Qualified

1800 V

1000 V/us

300 mA

300 us

T221N18BOFHOSA1

Infineon Technologies

SCR

POST/STUD MOUNT

NO

UPPER

SINGLE

METAL

200 mA

HIGH CURRENT CABLE

ROUND

1

1800 V

3

450 A

O-MUPM-H3

Not Qualified

1800 V

NOT SPECIFIED

NOT SPECIFIED

A158S12TBF

Infineon Technologies

ASSYMETRIC SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

CERAMIC, METAL-SEALED COFIRED

300 mA

UNSPECIFIED

ROUND

1

15 V

5

400 A

O-CXDB-X5

Not Qualified

1200 V

FAST

NOT SPECIFIED

NOT SPECIFIED

T1869N16TOF

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

CERAMIC, METAL-SEALED COFIRED

300 mA

40000 A

UNSPECIFIED

ROUND

1

250 mA

1600 V

4

Silicon Controlled Rectifiers

125 Cel

-40 Cel

4100 A

O-CXDB-X4

2.5 V

Not Qualified

1600 V

1000 V/us

300 mA

300 us

T130N08EOF

Infineon Technologies

SCR

POST/STUD MOUNT

NO

UPPER

SINGLE

ANODE

METAL

150 mA

3000 A

HIGH CURRENT CABLE

ROUND

130 A

1

30 mA

800 V

3

Silicon Controlled Rectifiers

125 Cel

-40 Cel

300 A

O-MUPM-H3

1.4 V

Not Qualified

800 V

1000 V/us

200 mA

180 us

T130N18EOF

Infineon Technologies

SCR

POST/STUD MOUNT

NO

UPPER

SINGLE

ANODE

METAL

150 mA

HIGH CURRENT CABLE

ROUND

1

1800 V

3

300 A

O-MUPM-H3

Not Qualified

1800 V

NOT SPECIFIED

NOT SPECIFIED

T1800N42TOF

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

1.65 V

CERAMIC, METAL-SEALED COFIRED

300 mA

41000 A

UNSPECIFIED

ROUND

2490 A

1

300 mA

4200 V

4

125 Cel

-40 Cel

2820 A

O-CXDB-X4

2.5 V

4200 V

1000 V/us

300 mA

900 us

IEC-60747-6

T3011N75TOH

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

UNSPECIFIED

350 mA

UNSPECIFIED

ROUND

1

7500 V

3

125 Cel

4400 A

O-XXDB-X3

7500 V

T130N08BOF

Infineon Technologies

SCR

POST/STUD MOUNT

NO

UPPER

SINGLE

ANODE

METAL

150 mA

3000 A

HIGH CURRENT CABLE

ROUND

130 A

1

30 mA

800 V

3

Silicon Controlled Rectifiers

125 Cel

-40 Cel

300 A

O-MUPM-H3

1.4 V

Not Qualified

800 V

1000 V/us

200 mA

180 us

T3011N80TOH

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

UNSPECIFIED

350 mA

UNSPECIFIED

ROUND

1

8000 V

3

125 Cel

4400 A

O-XXDB-X3

1

8000 V

T1189N14TOF

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

2.05 V

UNSPECIFIED

250 mA

25500 A

UNSPECIFIED

ROUND

1190 A

1

1400 V

4

125 Cel

-40 Cel

2800 A

O-XXDB-X4

2 V

1400 V

1000 V/us

500 mA

240 us

T398N02TOF

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

6300 A

UNSPECIFIED

ROUND

510 A

1

30 mA

200 V

4

Silicon Controlled Rectifiers

140 Cel

-40 Cel

800 A

O-CXDB-X4

1.4 V

Not Qualified

200 V

1000 V/us

200 mA

200 us

T1590N28TOF_VT

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

UNSPECIFIED

300 mA

UNSPECIFIED

ROUND

1

2800 V

4

125 Cel

-40 Cel

3600 A

O-XXDB-X4

2800 V

IEC-60747-6

TZ240N34KOFHPSA1

Infineon Technologies

SCR

FLANGE MOUNT

NO

UNSPECIFIED

SINGLE

ISOLATED

UNSPECIFIED

250 mA

UNSPECIFIED

RECTANGULAR

1

3400 V

4

125 Cel

-40 Cel

700 A

R-XXFM-X4

3400 V

NOT SPECIFIED

NOT SPECIFIED

IEC-747-6; UL RECOGNIZED

T3801N36TOFVT

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

CERAMIC, METAL-SEALED COFIRED

350 mA

UNSPECIFIED

ROUND

1

3600 V

4

9250 A

O-CXDB-X4

3600 V

Silicon Controlled Rectifiers (SCR)

Silicon Controlled Rectifiers (SCRs) are semiconductor devices that are used to control the flow of electrical current in high-power applications. They are also known as thyristors, which are a family of devices that includes SCRs, triacs, and diacs.

SCRs consist of four layers of alternating p-type and n-type semiconductor material, forming three p-n junctions. The device has three terminals: the anode (A), the cathode (K), and the gate (G). The SCR is designed to conduct current only in one direction, from the anode to the cathode.

SCRs work by applying a positive voltage to the anode, which causes current to flow into the device. The gate terminal is used to control the flow of current by applying a small voltage pulse to trigger the device. Once triggered, the SCR conducts current until the voltage across the device drops below a certain level, at which point it turns off.

SCRs are commonly used in high-power applications such as motor control, lighting control, and power supplies. They are often used in conjunction with other components such as capacitors, inductors, and diodes to form complete electronic circuits.

Proper selection and use of SCRs are critical to ensure safe and reliable operation of power control circuits. Factors such as the maximum voltage rating, maximum current rating, and operating temperature range should be considered when selecting an SCR for a particular application.