BOTTOM Silicon Controlled Rectifiers (SCR) 756

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Part RoHS Manufacturer Trigger Device Type Package Style (Meter) Surface Mount Terminal Position Configuration Case Connection Maximum On-state Voltage Package Body Material Maximum DC Gate Trigger Current Non Repetitive Peak On-state Current Terminal Form Package Shape Maximum On-state Current No. of Elements Maximum Leakage Current Repetitive Peak Reverse Voltage Maximum Repetitive Peak Off-state Leakage Current No. of Terminals Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum RMS On-state Current JESD-30 Code Moisture Sensitivity Level (MSL) Maximum DC Gate Trigger Voltage Qualification Repetitive Peak Off-state Voltage Minimum Critical Rate of Rise of Off-state Voltage Maximum Holding Current Additional Features Nominal Circuit Commutated Turn-off Time JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

EC103D1,116

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

12000 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

400 V

3

Silicon Controlled Rectifiers

150 Cel

-40 Cel

TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

400 V

5 mA

100 us

TO-92

e3

30

260

BT149G,126

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

600 V

3

Silicon Controlled Rectifiers

125 Cel

TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

600 V

500 V/us

5 mA

SENSITIVE GATE

100 us

TO-92

e3

30

260

BT149D,126

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

400 V

100 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

400 V

500 V/us

5 mA

SENSITIVE GATE

100 us

e3

30

260

BT149BAMO

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

THROUGH-HOLE

ROUND

1

200 V

3

.8 A

O-PBCY-T3

Not Qualified

200 V

SENSITIVE GATE

TO-92

NOT SPECIFIED

NOT SPECIFIED

BT149GAMO

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

THROUGH-HOLE

ROUND

1

600 V

3

TIN

.8 A

O-PBCY-T3

Not Qualified

600 V

SENSITIVE GATE

TO-92

e3

BT149E

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

THROUGH-HOLE

ROUND

1

500 V

100 uA

3

125 Cel

.8 A

O-PBCY-T3

.8 V

Not Qualified

500 V

5 mA

SENSITIVE GATE

100 us

BT149G

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

600 V

100 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

600 V

500 V/us

5 mA

SENSITIVE GATE

100 us

e3

30

260

BT149D,112

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

400 V

100 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

400 V

500 V/us

5 mA

SENSITIVE GATE

100 us

e3

30

260

BT149B

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

200 V

100 uA

3

Silicon Controlled Rectifiers

125 Cel

MATTE TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

200 V

500 V/us

5 mA

SENSITIVE GATE

100 us

e3

BT149D

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

400 V

100 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

400 V

500 V/us

5 mA

SENSITIVE GATE

100 us

e3

30

260

BT149B,126

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

200 V

3

Silicon Controlled Rectifiers

125 Cel

MATTE TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

200 V

500 V/us

5 mA

SENSITIVE GATE

100 us

TO-92

e3

BT149G,412

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

.1 mA

600 V

100 uA

3

Silicon Controlled Rectifiers

125 Cel

TIN

.8 A

O-PBCY-T3

.8 V

Not Qualified

600 V

500 V/us

5 mA

SENSITIVE GATE

100 us

e3

30

260

2N881/PH

NXP Semiconductors

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

METAL

.2 mA

WIRE

ROUND

1

200 V

3

O-MBCY-W3

Not Qualified

TO-18

S08U50600A

Diodes Incorporated

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.05 mA

10 A

THROUGH-HOLE

RECTANGULAR

1

.1 mA

600 V

3

Silicon Controlled Rectifiers

110 Cel

-40 Cel

MATTE TIN

.8 A

R-PBCY-T3

1.2 V

Not Qualified

600 V

20 V/us

10 mA

TO-226AA

e3

260

S08U25600A

Diodes Incorporated

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.025 mA

10 A

THROUGH-HOLE

RECTANGULAR

1

600 V

3

Silicon Controlled Rectifiers

110 Cel

-40 Cel

MATTE TIN

.8 A

R-PBCY-T3

1.2 V

Not Qualified

600 V

20 V/us

10 mA

TO-226AA

e3

40

260

R1U50-600A

Diodes Incorporated

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.05 mA

THROUGH-HOLE

RECTANGULAR

1

600 V

3

110 Cel

-40 Cel

1 A

R-PBCY-T3

Not Qualified

600 V

TO-226AA

S1U50700A

Diodes Incorporated

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.05 mA

THROUGH-HOLE

RECTANGULAR

1

700 V

3

110 Cel

-40 Cel

BRIGHT TIN

1 A

R-PBCY-T3

Not Qualified

700 V

TO-226AA

e3

260

S08M02600A

Diodes Incorporated

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

10 A

THROUGH-HOLE

RECTANGULAR

1

600 V

3

Silicon Controlled Rectifiers

110 Cel

-40 Cel

MATTE TIN

.8 A

R-PBCY-T3

1.2 V

Not Qualified

600 V

20 V/us

10 mA

TO-226AA

e3

40

260

S1VM02600A

Diodes Incorporated

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

THROUGH-HOLE

RECTANGULAR

1

600 V

3

110 Cel

-40 Cel

BRIGHT TIN

1.5 A

R-PBCY-T3

Not Qualified

600 V

TO-226AA

e3

260

S1U50400A

Diodes Incorporated

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.05 mA

THROUGH-HOLE

RECTANGULAR

1

400 V

3

110 Cel

-40 Cel

1 A

R-PBCY-T3

Not Qualified

400 V

TO-226AA

NOT SPECIFIED

255

S1U50200A

Diodes Incorporated

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.05 mA

THROUGH-HOLE

RECTANGULAR

1

200 V

3

110 Cel

-40 Cel

1 A

R-PBCY-T3

Not Qualified

200 V

TO-226AA

NOT SPECIFIED

255

S1U50600A

Diodes Incorporated

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.05 mA

THROUGH-HOLE

RECTANGULAR

1

600 V

3

110 Cel

-40 Cel

1 A

R-PBCY-T3

Not Qualified

600 V

TO-226AA

NOT SPECIFIED

255

S1U50100A

Diodes Incorporated

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.05 mA

THROUGH-HOLE

RECTANGULAR

1

100 V

3

110 Cel

-40 Cel

1 A

R-PBCY-T3

Not Qualified

100 V

TO-226AA

NOT SPECIFIED

255

RSF05G1-1P

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

1 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

400 V

10 uA

3

Silicon Controlled Rectifiers

125 Cel

-40 Cel

.8 A

O-PBCY-T3

.8 V

Not Qualified

400 V

6 mA

TO-92

NOT SPECIFIED

NOT SPECIFIED

SF10B14

Toshiba

SCR

FLANGE MOUNT

NO

BOTTOM

SINGLE

ANODE

METAL

27 mA

PIN/PEG

ROUND

1

100 V

1000 uA

2

125 Cel

-40 Cel

Tin/Lead (Sn/Pb)

16 A

O-MBFM-P2

1.5 V

Not Qualified

100 V

60 mA

TO-66

e0

SF16G14

Toshiba

SCR

FLANGE MOUNT

NO

BOTTOM

SINGLE

ANODE

METAL

40 mA

PIN/PEG

ROUND

1

400 V

6000 uA

2

110 Cel

-40 Cel

Tin/Lead (Sn/Pb)

25 A

O-MBFM-P2

3 V

Not Qualified

400 V

50 mA

TO-3

e0

SF1B12

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

ANODE

METAL

1 mA

WIRE

ROUND

1

100 V

100 uA

3

100 Cel

-40 Cel

Tin/Lead (Sn/Pb)

1.6 A

O-MBCY-W3

.8 V

Not Qualified

100 V

10 mA

TO-39

e0

RSF05G1-3P

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.4 mA

9 A

THROUGH-HOLE

ROUND

.5 A

1

400 V

10 uA

3

Silicon Controlled Rectifiers

125 Cel

-40 Cel

.8 A

O-PBCY-T3

.8 V

Not Qualified

400 V

3 mA

TO-92

NOT SPECIFIED

NOT SPECIFIED

SF0R5B43

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

THROUGH-HOLE

ROUND

1

100 V

100 uA

3

125 Cel

-65 Cel

.8 A

O-PBCY-T3

.8 V

Not Qualified

100 V

5 mA

TO-92

SR0R5G43

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

400 V

3

TIN LEAD

.79 A

O-PBCY-T3

Not Qualified

400 V

TO-92

e0

SH0R3B42

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

1 mA

THROUGH-HOLE

ROUND

1

100 V

100 uA

3

125 Cel

-40 Cel

.45 A

O-PBCY-T3

.9 V

Not Qualified

100 V

15 V/us

15 mA

HIGH SPEED

6 us

TO-92

S6370

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

THROUGH-HOLE

ROUND

1

400 V

10 uA

3

125 Cel

-40 Cel

TIN LEAD

.45 A

O-PBCY-T3

.8 V

Not Qualified

400 V

TO-92

e0

SF10D14

Toshiba

SCR

FLANGE MOUNT

NO

BOTTOM

SINGLE

ANODE

METAL

27 mA

PIN/PEG

ROUND

1

200 V

1000 uA

2

125 Cel

-40 Cel

Tin/Lead (Sn/Pb)

16 A

O-MBFM-P2

1.5 V

Not Qualified

200 V

60 mA

TO-66

e0

SF3D14

Toshiba

SCR

FLANGE MOUNT

NO

BOTTOM

SINGLE

ANODE

METAL

25 mA

PIN/PEG

ROUND

1

200 V

750 uA

2

100 Cel

-25 Cel

Tin/Lead (Sn/Pb)

4.7 A

O-MBFM-P2

1.5 V

Not Qualified

200 V

30 mA

TO-66

e0

SF5D14

Toshiba

SCR

FLANGE MOUNT

NO

BOTTOM

SINGLE

ANODE

METAL

27 mA

PIN/PEG

ROUND

1

200 V

750 uA

2

125 Cel

-40 Cel

Tin/Lead (Sn/Pb)

7.8 A

O-MBFM-P2

1.5 V

Not Qualified

200 V

30 mA

TO-66

e0

SF5B14

Toshiba

SCR

FLANGE MOUNT

NO

BOTTOM

SINGLE

ANODE

METAL

27 mA

PIN/PEG

ROUND

1

100 V

750 uA

2

125 Cel

-40 Cel

Tin/Lead (Sn/Pb)

7.8 A

O-MBFM-P2

1.5 V

Not Qualified

100 V

30 mA

TO-66

e0

SF1G12

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

ANODE

METAL

1 mA

WIRE

ROUND

1

400 V

100 uA

3

100 Cel

-40 Cel

Tin/Lead (Sn/Pb)

1.6 A

O-MBCY-W3

.8 V

Not Qualified

400 V

10 mA

TO-39

e0

SF5G14

Toshiba

SCR

FLANGE MOUNT

NO

BOTTOM

SINGLE

ANODE

METAL

27 mA

PIN/PEG

ROUND

1

400 V

750 uA

2

125 Cel

-40 Cel

Tin/Lead (Sn/Pb)

7.8 A

O-MBFM-P2

1.5 V

Not Qualified

400 V

30 mA

TO-66

e0

SF0R5J43

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

THROUGH-HOLE

ROUND

1

600 V

100 uA

3

125 Cel

-65 Cel

TIN LEAD

.8 A

O-PBCY-T3

.8 V

Not Qualified

600 V

5 mA

TO-92

e0

SF3B14

Toshiba

SCR

FLANGE MOUNT

NO

BOTTOM

SINGLE

ANODE

METAL

25 mA

PIN/PEG

ROUND

1

100 V

750 uA

2

100 Cel

-25 Cel

Tin/Lead (Sn/Pb)

4.7 A

O-MBFM-P2

1.5 V

Not Qualified

100 V

30 mA

TO-66

e0

SF0R3J42

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

THROUGH-HOLE

ROUND

1

600 V

100 uA

3

125 Cel

-40 Cel

Tin/Lead (Sn/Pb)

.45 A

O-PBCY-T3

.8 V

Not Qualified

600 V

TO-92

e0

SHOR3D42

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE WITH BUILT-IN RESISTOR BETWEEN GATE AND CATHODE

PLASTIC/EPOXY

1 mA

7 A

THROUGH-HOLE

ROUND

.3 A

1

.1 mA

100 uA

3

Silicon Controlled Rectifiers

125 Cel

-40 Cel

.45 A

O-PBCY-T3

.9 V

Not Qualified

200 V

15 V/us

15 mA

HIGH SPEED

6 us

TO-92

SF0R3D42

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

THROUGH-HOLE

ROUND

1

200 V

100 uA

3

125 Cel

-40 Cel

Tin/Lead (Sn/Pb)

.45 A

O-PBCY-T3

.8 V

Not Qualified

200 V

TO-92

e0

SH0R3D42

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

1 mA

7 A

THROUGH-HOLE

ROUND

.3 A

1

.1 mA

3

Silicon Controlled Rectifiers

125 Cel

-40 Cel

Tin/Lead (Sn/Pb)

.45 A

O-PBCY-T3

.9 V

Not Qualified

200 V

15 V/us

15 mA

HIGH SPEED

TO-92

e0

SF0R5G43

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

7 A

THROUGH-HOLE

ROUND

.5 A

1

.05 mA

400 V

50 uA

3

Silicon Controlled Rectifiers

125 Cel

-65 Cel

.8 A

O-PBCY-T3

.8 V

Not Qualified

400 V

5 mA

TO-92

NOT SPECIFIED

NOT SPECIFIED

SF16D14

Toshiba

SCR

FLANGE MOUNT

NO

BOTTOM

SINGLE

ANODE

METAL

40 mA

PIN/PEG

ROUND

1

200 V

6000 uA

2

110 Cel

-40 Cel

Tin/Lead (Sn/Pb)

25 A

O-MBFM-P2

3 V

Not Qualified

200 V

50 mA

TO-3

e0

SF0R1B42

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

THROUGH-HOLE

ROUND

1

100 V

100 uA

3

125 Cel

-40 Cel

Tin/Lead (Sn/Pb)

.15 A

O-PBCY-T3

.8 V

Not Qualified

100 V

TO-92

e0

SF0R5H43

Toshiba

SCR

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

.2 mA

THROUGH-HOLE

ROUND

1

500 V

100 uA

3

125 Cel

-65 Cel

.8 A

O-PBCY-T3

.8 V

Not Qualified

500 V

5 mA

TO-92

Silicon Controlled Rectifiers (SCR)

Silicon Controlled Rectifiers (SCRs) are semiconductor devices that are used to control the flow of electrical current in high-power applications. They are also known as thyristors, which are a family of devices that includes SCRs, triacs, and diacs.

SCRs consist of four layers of alternating p-type and n-type semiconductor material, forming three p-n junctions. The device has three terminals: the anode (A), the cathode (K), and the gate (G). The SCR is designed to conduct current only in one direction, from the anode to the cathode.

SCRs work by applying a positive voltage to the anode, which causes current to flow into the device. The gate terminal is used to control the flow of current by applying a small voltage pulse to trigger the device. Once triggered, the SCR conducts current until the voltage across the device drops below a certain level, at which point it turns off.

SCRs are commonly used in high-power applications such as motor control, lighting control, and power supplies. They are often used in conjunction with other components such as capacitors, inductors, and diodes to form complete electronic circuits.

Proper selection and use of SCRs are critical to ensure safe and reliable operation of power control circuits. Factors such as the maximum voltage rating, maximum current rating, and operating temperature range should be considered when selecting an SCR for a particular application.