Part | RoHS | Manufacturer | Trigger Device Type | Package Style (Meter) | Surface Mount | Terminal Position | Configuration | Case Connection | Maximum On-state Voltage | Package Body Material | Maximum DC Gate Trigger Current | Non Repetitive Peak On-state Current | Terminal Form | Package Shape | Maximum On-state Current | No. of Elements | Maximum Leakage Current | Repetitive Peak Reverse Voltage | Maximum Repetitive Peak Off-state Leakage Current | No. of Terminals | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum RMS On-state Current | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum DC Gate Trigger Voltage | Qualification | Repetitive Peak Off-state Voltage | Minimum Critical Rate of Rise of Off-state Voltage | Maximum Holding Current | Additional Features | Nominal Circuit Commutated Turn-off Time | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
BRIDGE |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
4 |
1600 V |
4 |
R-XXMA-X4 |
Not Qualified |
1600 V |
|||||||||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
400 mA |
NO LEAD |
ROUND |
1 |
120000 uA |
2 |
O-CEDB-N2 |
3.5 V |
Not Qualified |
4000 V |
1500 V/us |
300 mA |
400 us |
||||||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
UPPER |
SINGLE WITH BUILT-IN SERIES DIODE |
ISOLATED |
PLASTIC/EPOXY |
80 mA |
UNSPECIFIED |
RECTANGULAR |
1 |
800 V |
15000 uA |
5 |
125 Cel |
-40 Cel |
140 A |
R-PUFM-X5 |
1.5 V |
Not Qualified |
800 V |
500 V/us |
200 mA |
||||||||||||||||
Toshiba |
SCR |
NO |
1.7 V |
150 mA |
1600 A |
126 A |
15 mA |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
3 V |
800 V |
100 V/us |
200 mA |
20 us |
||||||||||||||||||||||||
Toshiba |
SCR |
1000 V |
628 A |
Not Qualified |
1000 V |
HIGH SPEED |
|||||||||||||||||||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
UPPER |
SERIES CONNECTED, 2 ELEMENTS |
ISOLATED |
PLASTIC/EPOXY |
80 mA |
UNSPECIFIED |
RECTANGULAR |
2 |
1200 V |
15000 uA |
7 |
125 Cel |
-40 Cel |
140 A |
R-PUFM-X7 |
1.5 V |
Not Qualified |
1200 V |
500 V/us |
200 mA |
||||||||||||||||
Toshiba |
REVERSE CONDUCTING SCR |
NO |
2.2 V |
200 mA |
3300 A |
150 A |
20 mA |
Silicon Controlled Rectifiers |
115 Cel |
-40 Cel |
3 V |
1300 V |
|||||||||||||||||||||||||||
Toshiba |
SCR |
POST/STUD MOUNT |
NO |
UPPER |
SINGLE |
ANODE |
METAL |
40 mA |
SOLDER LUG |
ROUND |
1 |
600 V |
2000 uA |
2 |
125 Cel |
-65 Cel |
7.8 A |
O-MUPM-D2 |
2 V |
Not Qualified |
600 V |
60 mA |
|||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
1000 mA |
NO LEAD |
ROUND |
1 |
500 V |
50000 uA |
2 |
115 Cel |
-40 Cel |
700 A |
O-CEDB-N2 |
1.5 V |
Not Qualified |
2500 V |
500 V/us |
PEAK TURN-OFF CURRENT IS 1400A |
25 us |
||||||||||||||||
Toshiba |
SCR |
NO |
2.3 V |
50 mA |
30 A |
2 A |
.1 mA |
Silicon Controlled Rectifiers |
70 Cel |
-25 Cel |
Tin/Lead (Sn/Pb) |
3 V |
400 V |
50 V/us |
30000 mA |
e0 |
|||||||||||||||||||||||
Toshiba |
SCR |
POST/STUD MOUNT |
NO |
UPPER |
SINGLE |
ANODE |
METAL |
150 mA |
HIGH CURRENT CABLE |
ROUND |
1 |
300 V |
30000 uA |
3 |
125 Cel |
-40 Cel |
236 A |
O-MUPM-H3 |
3 V |
Not Qualified |
300 V |
200 V/us |
200 mA |
HIGH SPEED |
15 us |
||||||||||||||
Toshiba |
SCR |
POST/STUD MOUNT |
NO |
UPPER |
SINGLE |
ANODE |
METAL |
150 mA |
HIGH CURRENT CABLE |
ROUND |
1 |
1200 V |
15000 uA |
3 |
125 Cel |
-40 Cel |
126 A |
O-MUPM-H3 |
3 V |
Not Qualified |
1200 V |
200 V/us |
200 mA |
||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
2000 mA |
NO LEAD |
ROUND |
1 |
15 V |
40000 uA |
2 |
125 Cel |
-40 Cel |
550 A |
O-CEDB-N2 |
1 V |
Not Qualified |
1800 V |
1000 V/us |
PEAK TURN-OFF CURRENT IS 1500A |
22 us |
||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
400 V |
25000 uA |
2 |
125 Cel |
-40 Cel |
785 A |
O-CEDB-N2 |
3 V |
Not Qualified |
400 V |
200 V/us |
300 mA |
150 us |
||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
100 V |
15000 uA |
2 |
125 Cel |
-40 Cel |
235 A |
O-CEDB-N2 |
3 V |
Not Qualified |
100 V |
200 V/us |
200 mA |
|||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
320 mA |
NO LEAD |
ROUND |
1 |
800 V |
35000 uA |
2 |
125 Cel |
-40 Cel |
1260 A |
O-CEDB-N2 |
4 V |
Not Qualified |
800 V |
500 V/us |
300 mA |
|||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
1000 V |
25000 uA |
2 |
125 Cel |
-40 Cel |
628 A |
O-CEDB-N2 |
3 V |
Not Qualified |
1000 V |
200 V/us |
300 mA |
150 us |
||||||||||||||||
Toshiba |
SCR |
NO |
1.8 V |
25 mA |
90 A |
8 A |
.5 mA |
Silicon Controlled Rectifiers |
100 Cel |
-40 Cel |
1.5 V |
200 V |
30 mA |
50 us |
|||||||||||||||||||||||||
Toshiba |
SCR |
NO |
1.7 V |
150 mA |
1600 A |
126 A |
15 mA |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
3 V |
800 V |
15 V/us |
200 mA |
|||||||||||||||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
3 PHASE BRIDGE |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
1600 V |
5 |
R-XXMA-X5 |
Not Qualified |
1600 V |
|||||||||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
260 mA |
NO LEAD |
ROUND |
1 |
800 V |
50000 uA |
2 |
115 Cel |
-40 Cel |
630 A |
O-CEDB-N2 |
3.5 V |
Not Qualified |
800 V |
500 V/us |
400 mA |
HIGH SPEED |
25 us |
|||||||||||||||
Toshiba |
SCR |
CYLINDRICAL |
NO |
BOTTOM |
SINGLE |
PLASTIC/EPOXY |
.2 mA |
THROUGH-HOLE |
ROUND |
1 |
400 V |
100 uA |
3 |
125 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
.15 A |
O-PBCY-T3 |
.8 V |
Not Qualified |
400 V |
TO-92 |
e0 |
||||||||||||||||
Toshiba |
SCR |
NO |
1.5 V |
150 mA |
3200 A |
235 A |
20 mA |
Silicon Controlled Rectifiers |
125 Cel |
-45 Cel |
3 V |
400 V |
50 V/us |
200 mA |
30 us |
||||||||||||||||||||||||
Toshiba |
SCR |
POST/STUD MOUNT |
NO |
UPPER |
SINGLE |
ANODE |
METAL |
100 mA |
SOLDER LUG |
ROUND |
1 |
500 V |
10000 uA |
2 |
125 Cel |
-40 Cel |
47 A |
O-MUPM-D2 |
3 V |
Not Qualified |
500 V |
200 V/us |
150 mA |
HIGH SPEED |
15 us |
||||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
ANTI-PARALLEL, 2 ELEMENTS |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
2 |
600 V |
2 |
R-XXMA-X2 |
Not Qualified |
600 V |
|||||||||||||||||||||||||
Toshiba |
SCR |
CYLINDRICAL |
NO |
BOTTOM |
SINGLE |
ANODE |
METAL |
1 mA |
WIRE |
ROUND |
1 |
200 V |
100 uA |
3 |
100 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
1.6 A |
O-MBCY-W3 |
.8 V |
Not Qualified |
200 V |
10 mA |
TO-39 |
e0 |
||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
UPPER |
SERIES CONNECTED, 2 ELEMENTS |
ISOLATED |
PLASTIC/EPOXY |
80 mA |
UNSPECIFIED |
RECTANGULAR |
2 |
400 V |
6000 uA |
7 |
125 Cel |
-40 Cel |
47 A |
R-PUFM-X7 |
1.5 V |
Not Qualified |
400 V |
500 V/us |
150 mA |
||||||||||||||||
Toshiba |
SCR |
NO |
1.5 V |
150 mA |
3200 A |
235 A |
20 mA |
Silicon Controlled Rectifiers |
125 Cel |
-45 Cel |
3 V |
600 V |
50 V/us |
200 mA |
30 us |
||||||||||||||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
3 PHASE BRIDGE |
ISOLATED |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
800 V |
19 |
R-XXMA-X19 |
Not Qualified |
800 V |
THYRISTOR CONTROL UNIT |
|||||||||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
UPPER |
SERIES CONNECTED, 2 ELEMENTS |
ISOLATED |
PLASTIC/EPOXY |
80 mA |
UNSPECIFIED |
RECTANGULAR |
2 |
1600 V |
6000 uA |
7 |
125 Cel |
-40 Cel |
47 A |
R-PUFM-X7 |
1.5 V |
Not Qualified |
1600 V |
500 V/us |
150 mA |
||||||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
3 PHASE BRIDGE |
ISOLATED |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
800 V |
19 |
R-XXMA-X19 |
Not Qualified |
800 V |
THYRISTOR CONTROL UNIT |
|||||||||||||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
3 BANKS, ANTI-PARALLEL, 2 ELEMENTS |
ISOLATED |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
1200 V |
22 |
R-XXMA-X22 |
Not Qualified |
1200 V |
THYRISTOR CONTROL UNIT |
|||||||||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
SINGLE |
SINGLE |
PLASTIC/EPOXY |
20 mA |
350 A |
THROUGH-HOLE |
RECTANGULAR |
25 A |
1 |
.02 mA |
400 V |
20 uA |
3 |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
39 A |
R-PSFM-T3 |
1.5 V |
Not Qualified |
400 V |
100 mA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
320 mA |
NO LEAD |
ROUND |
1 |
1600 V |
2 |
1260 A |
O-CEDB-N2 |
Not Qualified |
1600 V |
|||||||||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
SINGLE |
SINGLE |
ISOLATED |
PLASTIC/EPOXY |
15 mA |
275 A |
THROUGH-HOLE |
RECTANGULAR |
16 A |
1 |
.02 mA |
600 V |
20 uA |
3 |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
TIN LEAD |
25 A |
R-PSFM-T3 |
1.5 V |
Not Qualified |
600 V |
50 V/us |
50 mA |
e0 |
||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
3 BANKS, ANTI-PARALLEL, 2 ELEMENTS |
ISOLATED |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
1200 V |
20 |
R-XXMA-X20 |
Not Qualified |
1200 V |
THYRISTOR CONTROL UNIT |
|||||||||||||||||||||||
Toshiba |
SCR |
NO |
1.7 V |
100 mA |
1100 A |
78 A |
8 mA |
Silicon Controlled Rectifiers |
125 Cel |
-45 Cel |
3 V |
400 V |
100 V/us |
150 mA |
20 us |
||||||||||||||||||||||||
Toshiba |
SCR |
SMALL OUTLINE |
YES |
SINGLE |
SINGLE WITH BUILT-IN RESISTOR BETWEEN GATE AND CATHODE |
ANODE |
PLASTIC/EPOXY |
.07 mA |
GULL WING |
RECTANGULAR |
1 |
600 V |
2 |
TIN LEAD |
7.8 A |
R-PSSO-G2 |
Not Qualified |
600 V |
e0 |
||||||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
1000 mA |
NO LEAD |
ROUND |
1 |
15 V |
20000 uA |
2 |
125 Cel |
-40 Cel |
400 A |
O-CEDB-N2 |
1.2 V |
Not Qualified |
1600 V |
900 V/us |
PEAK TURN-OFF CURRENT IS 1000A |
18 us |
||||||||||||||||
Toshiba |
SCR |
NO |
2 V |
300 mA |
5000 A |
300 A |
35 mA |
Silicon Controlled Rectifiers |
110 Cel |
-40 Cel |
3.5 V |
600 V |
50 V/us |
300 mA |
10 us |
||||||||||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
UPPER |
SINGLE WITH BUILT-IN SERIES DIODE |
ISOLATED |
PLASTIC/EPOXY |
80 mA |
UNSPECIFIED |
RECTANGULAR |
1 |
800 V |
10000 uA |
5 |
125 Cel |
-40 Cel |
79 A |
R-PUFM-X5 |
1.5 V |
Not Qualified |
800 V |
500 V/us |
150 mA |
||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
FLANGE MOUNT |
NO |
UNSPECIFIED |
SINGLE |
ANODE |
METAL |
700 mA |
SOLDER LUG |
ROUND |
1 |
15 V |
10000 uA |
3 |
125 Cel |
-40 Cel |
300 A |
O-MXFM-D3 |
1 V |
Not Qualified |
2500 V |
600 V/us |
PEAK TURN-OFF CURRENT IS 800A |
16 us |
|||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
450 mA |
NO LEAD |
ROUND |
1 |
2500 V |
120000 uA |
2 |
125 Cel |
-40 Cel |
2355 A |
O-CEDB-N2 |
3.5 V |
Not Qualified |
2500 V |
500 V/us |
300 mA |
400 us |
||||||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
3 PHASE BRIDGE |
ISOLATED |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
800 V |
21 |
R-XXMA-X21 |
Not Qualified |
800 V |
THYRISTOR CONTROL UNIT |
|||||||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
1200 V |
15000 uA |
2 |
125 Cel |
-40 Cel |
157 A |
O-CEDB-N2 |
3 V |
Not Qualified |
1200 V |
200 V/us |
200 mA |
HIGH SPEED |
80 us |
|||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
320 mA |
NO LEAD |
ROUND |
1 |
1000 V |
35000 uA |
2 |
125 Cel |
-40 Cel |
1260 A |
O-CEDB-N2 |
4 V |
Not Qualified |
1000 V |
500 V/us |
300 mA |
|||||||||||||||||
Toshiba |
SCR |
POST/STUD MOUNT |
NO |
UPPER |
SINGLE |
ANODE |
METAL |
150 mA |
HIGH CURRENT CABLE |
ROUND |
1 |
1300 V |
15000 uA |
3 |
125 Cel |
-40 Cel |
126 A |
O-MUPM-H3 |
3 V |
Not Qualified |
1300 V |
200 V/us |
200 mA |
||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
700 mA |
NO LEAD |
ROUND |
1 |
15 V |
10000 uA |
2 |
125 Cel |
-40 Cel |
200 A |
O-CEDB-N2 |
1 V |
Not Qualified |
1800 V |
600 V/us |
PEAK TURN-OFF CURRENT IS 700A |
16 us |
Silicon Controlled Rectifiers (SCRs) are semiconductor devices that are used to control the flow of electrical current in high-power applications. They are also known as thyristors, which are a family of devices that includes SCRs, triacs, and diacs.
SCRs consist of four layers of alternating p-type and n-type semiconductor material, forming three p-n junctions. The device has three terminals: the anode (A), the cathode (K), and the gate (G). The SCR is designed to conduct current only in one direction, from the anode to the cathode.
SCRs work by applying a positive voltage to the anode, which causes current to flow into the device. The gate terminal is used to control the flow of current by applying a small voltage pulse to trigger the device. Once triggered, the SCR conducts current until the voltage across the device drops below a certain level, at which point it turns off.
SCRs are commonly used in high-power applications such as motor control, lighting control, and power supplies. They are often used in conjunction with other components such as capacitors, inductors, and diodes to form complete electronic circuits.
Proper selection and use of SCRs are critical to ensure safe and reliable operation of power control circuits. Factors such as the maximum voltage rating, maximum current rating, and operating temperature range should be considered when selecting an SCR for a particular application.