Part | RoHS | Manufacturer | Trigger Device Type | Package Style (Meter) | Surface Mount | Terminal Position | Configuration | Case Connection | Maximum On-state Voltage | Package Body Material | Maximum DC Gate Trigger Current | Non Repetitive Peak On-state Current | Terminal Form | Package Shape | Maximum On-state Current | No. of Elements | Maximum Leakage Current | Repetitive Peak Reverse Voltage | Maximum Repetitive Peak Off-state Leakage Current | No. of Terminals | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum RMS On-state Current | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum DC Gate Trigger Voltage | Qualification | Repetitive Peak Off-state Voltage | Minimum Critical Rate of Rise of Off-state Voltage | Maximum Holding Current | Additional Features | Nominal Circuit Commutated Turn-off Time | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
SCR |
POST/STUD MOUNT |
NO |
UPPER |
SINGLE |
ANODE |
METAL |
260 mA |
HIGH CURRENT CABLE |
ROUND |
1 |
800 V |
20000 uA |
3 |
125 Cel |
-40 Cel |
470 A |
O-MUPM-H3 |
3.5 V |
Not Qualified |
800 V |
200 V/us |
300 mA |
150 us |
|||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
UPPER |
SINGLE WITH BUILT-IN SERIES DIODE |
ISOLATED |
PLASTIC/EPOXY |
80 mA |
UNSPECIFIED |
RECTANGULAR |
1 |
800 V |
6000 uA |
5 |
125 Cel |
-40 Cel |
47 A |
R-PUFM-X5 |
1.5 V |
Not Qualified |
800 V |
500 V/us |
150 mA |
||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
CERAMIC, METAL-SEALED COFIRED |
2500 mA |
16000 A |
UNSPECIFIED |
ROUND |
800 A |
150 mA |
4 |
Silicon Controlled Rectifiers |
115 Cel |
-40 Cel |
O-CEDB-X4 |
1.5 V |
Not Qualified |
4500 V |
||||||||||||||||||||
Toshiba |
SCR |
NO |
1.9 V |
150 mA |
2000 A |
100 A |
15 mA |
Silicon Controlled Rectifiers |
125 Cel |
-45 Cel |
3 V |
600 V |
200 V/us |
200 mA |
|||||||||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
1300 V |
20000 uA |
2 |
125 Cel |
-40 Cel |
393 A |
O-CEDB-N2 |
3 V |
Not Qualified |
1300 V |
200 V/us |
200 mA |
|||||||||||||||||
Toshiba |
SCR |
NO |
1.6 V |
260 mA |
5000 A |
470 A |
20 mA |
Silicon Controlled Rectifiers |
125 Cel |
-45 Cel |
3.5 V |
300 V |
50 V/us |
300 mA |
30 us |
||||||||||||||||||||||||
Toshiba |
SCR |
POST/STUD MOUNT |
NO |
UPPER |
SINGLE |
ANODE |
METAL |
150 mA |
HIGH CURRENT CABLE |
ROUND |
1 |
400 V |
30000 uA |
3 |
125 Cel |
-40 Cel |
126 A |
O-MUPM-H3 |
3 V |
Not Qualified |
400 V |
200 V/us |
200 mA |
HIGH SPEED |
15 us |
||||||||||||||
Toshiba |
SCR |
IN-LINE |
NO |
SINGLE |
SINGLE |
PLASTIC/EPOXY |
10 mA |
50 A |
THROUGH-HOLE |
RECTANGULAR |
3 A |
1 |
.01 mA |
600 V |
10 uA |
3 |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
4.7 A |
R-PSIP-T3 |
1 V |
Not Qualified |
600 V |
40 mA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
3 BANKS, ANTI-PARALLEL, 2 ELEMENTS |
ISOLATED |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
1200 V |
19 |
R-XXMA-X19 |
Not Qualified |
1200 V |
THYRISTOR CONTROL UNIT |
|||||||||||||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
3 PHASE BRIDGE |
ISOLATED |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
1600 V |
19 |
R-XXMA-X19 |
Not Qualified |
1600 V |
THYRISTOR CONTROL UNIT |
|||||||||||||||||||||||
Toshiba |
SCR |
NO |
1.7 V |
100 mA |
1100 A |
78 A |
8 mA |
Silicon Controlled Rectifiers |
125 Cel |
-45 Cel |
3 V |
200 V |
100 V/us |
150 mA |
20 us |
||||||||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
400 V |
35000 uA |
2 |
125 Cel |
-40 Cel |
940 A |
O-CEDB-N2 |
3 V |
Not Qualified |
400 V |
200 V/us |
300 mA |
150 us |
||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
UPPER |
SINGLE WITH BUILT-IN SERIES DIODE |
ISOLATED |
PLASTIC/EPOXY |
80 mA |
UNSPECIFIED |
RECTANGULAR |
1 |
800 V |
10000 uA |
5 |
125 Cel |
-40 Cel |
79 A |
R-PUFM-X5 |
1.5 V |
Not Qualified |
800 V |
500 V/us |
150 mA |
||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
SINGLE |
SINGLE |
ANODE |
PLASTIC/EPOXY |
40 mA |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 V |
2000 uA |
3 |
125 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
16 A |
R-PSFM-T3 |
2 V |
Not Qualified |
600 V |
80 mA |
TO-220AB |
e0 |
||||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
3 PHASE BRIDGE |
ISOLATED |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
1600 V |
21 |
R-XXMA-X21 |
Not Qualified |
1600 V |
THYRISTOR CONTROL UNIT |
|||||||||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
Not Qualified |
|||||||||||||||||||||||||||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
3 PHASE BRIDGE |
ISOLATED |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
1600 V |
19 |
R-XXMA-X19 |
Not Qualified |
1600 V |
THYRISTOR CONTROL UNIT |
|||||||||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
SINGLE |
SINGLE |
ANODE |
PLASTIC/EPOXY |
.5 mA |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 V |
250 uA |
3 |
125 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
4 A |
R-PSFM-T3 |
1 V |
Not Qualified |
400 V |
3 V/us |
e0 |
|||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
UPPER |
SINGLE WITH BUILT-IN SERIES DIODE |
ISOLATED |
PLASTIC/EPOXY |
80 mA |
UNSPECIFIED |
RECTANGULAR |
1 |
1200 V |
6000 uA |
5 |
125 Cel |
-40 Cel |
47 A |
R-PUFM-X5 |
1.5 V |
Not Qualified |
1200 V |
500 V/us |
150 mA |
||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
UPPER |
SERIES CONNECTED, 2 ELEMENTS |
ISOLATED |
PLASTIC/EPOXY |
80 mA |
UNSPECIFIED |
RECTANGULAR |
2 |
1600 V |
15000 uA |
7 |
125 Cel |
-40 Cel |
140 A |
R-PUFM-X7 |
1.5 V |
Not Qualified |
1600 V |
500 V/us |
200 mA |
||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
800 V |
30000 uA |
2 |
125 Cel |
-40 Cel |
157 A |
O-CEDB-N2 |
3 V |
Not Qualified |
800 V |
200 V/us |
200 mA |
HIGH SPEED |
15 us |
|||||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
3 PHASE BRIDGE |
ISOLATED |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
1600 V |
19 |
R-XXMA-X19 |
Not Qualified |
1600 V |
THYRISTOR CONTROL UNIT |
|||||||||||||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
3 BANKS, ANTI-PARALLEL, 2 ELEMENTS |
ISOLATED |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
6 |
1200 V |
19 |
R-XXMA-X19 |
Not Qualified |
1200 V |
THYRISTOR CONTROL UNIT |
|||||||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
250 mA |
NO LEAD |
ROUND |
1 |
400 V |
50000 uA |
2 |
125 Cel |
-40 Cel |
2355 A |
O-CEDB-N2 |
2.5 V |
Not Qualified |
400 V |
500 V/us |
300 mA |
|||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
END |
CERAMIC, METAL-SEALED COFIRED |
20000 mA |
46000 A |
NO LEAD |
ROUND |
2700 A |
2 |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
O-CEDB-N2 |
2 V |
Not Qualified |
6000 V |
||||||||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
SINGLE |
SINGLE |
PLASTIC/EPOXY |
.1 mA |
THROUGH-HOLE |
RECTANGULAR |
1 |
10 V |
10 uA |
3 |
125 Cel |
-40 Cel |
4.7 A |
R-PSFM-T3 |
.8 V |
Not Qualified |
400 V |
|||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
260 mA |
NO LEAD |
ROUND |
1 |
1000 V |
20000 uA |
2 |
125 Cel |
-40 Cel |
628 A |
O-CEDB-N2 |
3.5 V |
Not Qualified |
1000 V |
200 V/us |
300 mA |
150 us |
||||||||||||||||
Toshiba |
REVERSE CONDUCTING SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
300 mA |
NO LEAD |
ROUND |
1 |
100000 uA |
2 |
115 Cel |
-40 Cel |
630 A |
O-CEDB-N2 |
3 V |
Not Qualified |
2500 V |
350 V/us |
1000 mA |
HIGH SPEED |
40 us |
||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
SINGLE |
SINGLE |
ANODE |
PLASTIC/EPOXY |
.2 mA |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 V |
200 uA |
3 |
125 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
3.1 A |
R-PSFM-T3 |
.8 V |
Not Qualified |
100 V |
e0 |
||||||||||||||||
Toshiba |
SCR |
NO |
2 V |
100 mA |
600 A |
30 A |
8 mA |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
3 V |
800 V |
100 V/us |
150 mA |
15 us |
||||||||||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
700 mA |
NO LEAD |
ROUND |
1 |
15 V |
10000 uA |
2 |
125 Cel |
-40 Cel |
360 A |
O-CEDB-N2 |
1 V |
Not Qualified |
1800 V |
1000 V/us |
PEAK TURN-OFF CURRENT IS 800A |
16 us |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||
Toshiba |
SCR |
NO |
1.9 V |
260 mA |
7200 A |
630 A |
35 mA |
Silicon Controlled Rectifiers |
110 Cel |
-40 Cel |
3.5 V |
1000 V |
50 V/us |
300 mA |
50 us |
||||||||||||||||||||||||
Toshiba |
SCR |
POST/STUD MOUNT |
NO |
UPPER |
SINGLE |
ANODE |
METAL |
50 mA |
SOLDER LUG |
ROUND |
1 |
500 V |
6000 uA |
2 |
125 Cel |
-40 Cel |
25 A |
O-MUPM-D2 |
3 V |
Not Qualified |
500 V |
100 V/us |
80 mA |
HIGH SPEED |
10 us |
||||||||||||||
Toshiba |
SCR |
POST/STUD MOUNT |
NO |
UPPER |
SINGLE |
ANODE |
METAL |
40 mA |
66 A |
SOLDER LUG |
ROUND |
5 A |
1 |
6 mA |
300 V |
4000 uA |
2 |
Silicon Controlled Rectifiers |
125 Cel |
-65 Cel |
7.8 A |
O-MUPM-D2 |
2 V |
Not Qualified |
300 V |
60 mA |
|||||||||||||
Toshiba |
GATE TURN-OFF SCR |
FLANGE MOUNT |
NO |
UNSPECIFIED |
SINGLE |
ANODE |
METAL |
700 mA |
SOLDER LUG |
ROUND |
1 |
15 V |
10000 uA |
3 |
125 Cel |
-40 Cel |
200 A |
O-MXFM-D3 |
1 V |
Not Qualified |
1600 V |
600 V/us |
PEAK TURN-OFF CURRENT IS 700A |
16 us |
|||||||||||||||
Toshiba |
SCR |
NO |
2 V |
100 mA |
600 A |
30 A |
8 mA |
Silicon Controlled Rectifiers |
125 Cel |
-45 Cel |
3 V |
600 V |
100 V/us |
150 mA |
15 us |
||||||||||||||||||||||||
Toshiba |
SCR |
POST/STUD MOUNT |
NO |
UPPER |
SINGLE |
ANODE |
METAL |
100 mA |
SOLDER LUG |
ROUND |
1 |
400 V |
10000 uA |
2 |
125 Cel |
-40 Cel |
47 A |
O-MUPM-D2 |
3 V |
Not Qualified |
400 V |
200 V/us |
150 mA |
HIGH SPEED |
15 us |
||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
FLANGE MOUNT |
NO |
UNSPECIFIED |
SINGLE |
ANODE |
METAL |
500 mA |
SOLDER LUG |
ROUND |
1 |
15 V |
10000 uA |
3 |
125 Cel |
-40 Cel |
150 A |
O-MXFM-D3 |
1 V |
Not Qualified |
1800 V |
600 V/us |
PEAK TURN-OFF CURRENT IS 400A |
15 us |
|||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
SINGLE |
SINGLE |
ANODE |
PLASTIC/EPOXY |
15 mA |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 V |
10 uA |
3 |
125 Cel |
-40 Cel |
16 A |
R-PSFM-T3 |
1 V |
Not Qualified |
200 V |
30 V/us |
40 mA |
TO-220AB |
|||||||||||||||
Toshiba |
SCR |
POST/STUD MOUNT |
NO |
UPPER |
SINGLE |
ANODE |
METAL |
100 mA |
SOLDER LUG |
ROUND |
1 |
800 V |
10000 uA |
2 |
125 Cel |
-40 Cel |
47 A |
O-MUPM-D2 |
3 V |
Not Qualified |
800 V |
200 V/us |
150 mA |
HIGH SPEED |
15 us |
||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
1600 V |
25000 uA |
2 |
125 Cel |
-40 Cel |
628 A |
O-CEDB-N2 |
3 V |
Not Qualified |
1600 V |
200 V/us |
300 mA |
150 us |
||||||||||||||||
Toshiba |
SCR |
IN-LINE |
NO |
SINGLE |
SINGLE |
PLASTIC/EPOXY |
10 mA |
80 A |
THROUGH-HOLE |
RECTANGULAR |
5 A |
1 |
.01 mA |
600 V |
10 uA |
3 |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
7.8 A |
R-PSIP-T3 |
1 V |
Not Qualified |
600 V |
40 mA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
BOTTOM |
SINGLE |
ANODE |
METAL |
27 mA |
PIN/PEG |
ROUND |
1 |
200 V |
1000 uA |
2 |
125 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
16 A |
O-MBFM-P2 |
1.5 V |
Not Qualified |
200 V |
60 mA |
TO-66 |
e0 |
||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
3000 mA |
NO LEAD |
ROUND |
1 |
17 V |
2 |
125 Cel |
-40 Cel |
1900 A |
O-CEDB-N2 |
Not Qualified |
4500 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
Toshiba |
SCR |
MICROELECTRONIC ASSEMBLY |
NO |
UNSPECIFIED |
BRIDGE |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
4 |
800 V |
4 |
R-XXMA-X4 |
Not Qualified |
800 V |
|||||||||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
400 V |
30000 uA |
2 |
125 Cel |
-40 Cel |
314 A |
O-CEDB-N2 |
3 V |
Not Qualified |
400 V |
200 V/us |
200 mA |
HIGH SPEED |
15 us |
|||||||||||||||
Toshiba |
SCR |
4000 V |
1256 A |
Not Qualified |
4000 V |
||||||||||||||||||||||||||||||||||
Toshiba |
SCR |
FLANGE MOUNT |
NO |
BOTTOM |
SINGLE |
ANODE |
METAL |
25 mA |
PIN/PEG |
ROUND |
1 |
200 V |
750 uA |
2 |
100 Cel |
-25 Cel |
Tin/Lead (Sn/Pb) |
4.7 A |
O-MBFM-P2 |
1.5 V |
Not Qualified |
200 V |
30 mA |
TO-66 |
e0 |
Silicon Controlled Rectifiers (SCRs) are semiconductor devices that are used to control the flow of electrical current in high-power applications. They are also known as thyristors, which are a family of devices that includes SCRs, triacs, and diacs.
SCRs consist of four layers of alternating p-type and n-type semiconductor material, forming three p-n junctions. The device has three terminals: the anode (A), the cathode (K), and the gate (G). The SCR is designed to conduct current only in one direction, from the anode to the cathode.
SCRs work by applying a positive voltage to the anode, which causes current to flow into the device. The gate terminal is used to control the flow of current by applying a small voltage pulse to trigger the device. Once triggered, the SCR conducts current until the voltage across the device drops below a certain level, at which point it turns off.
SCRs are commonly used in high-power applications such as motor control, lighting control, and power supplies. They are often used in conjunction with other components such as capacitors, inductors, and diodes to form complete electronic circuits.
Proper selection and use of SCRs are critical to ensure safe and reliable operation of power control circuits. Factors such as the maximum voltage rating, maximum current rating, and operating temperature range should be considered when selecting an SCR for a particular application.