Advanced Power Technology - BFR96

  1. Home
  2. Advanced Power Technology - BFR96
BFR96 by Advanced Power Technology

Image shown is a representation only.

Manufacturer Advanced Power Technology
Manufacturer's Part Number BFR96
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
Datasheet BFR96 Datasheet
In Stock2,070
NAME DESCRIPTION
Nominal Transition Frequency (fT): 5000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .5 W
Maximum Collector-Emitter Voltage: 15 V
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-PRDB-F3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Additional Features: LOW NOISE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 3.2 pF
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,070 - -

Popular Products

Category Top Products

TIS62A by Texas Instruments

TIS62A

Texas Instruments

TIS62A by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.5W, fT of 500MHz, and hFE min of 20. It is used in amplifier applications due to its very high frequency band capability and max. collector-emitter voltage of 12V.
MSC82040 by STMicroelectronics

MSC82040

STMicroelectronics

STMicroelectronics' MSC82040 is an NPN BJT transistor with 4 terminals, ideal for L Band applications. Featuring a max operating temp of 200 °C, it has a fT of 1600 MHz and hFE of 15, making it suitable for amplifier circuits in high-frequency environments. The package style is post/stud mount with a ceramic-metal-sealed co-fired body material.
JAN2N2907A by Vpt Components

JAN2N2907A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 60 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
2N3866A by Digitron Semiconductors

2N3866A

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
MT3S111(TE85LF) by Toshiba

MT3S111(TE85LF)

Toshiba

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
BFR92AW-GS08 by Vishay Semiconductors

BFR92AW-GS08

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; Transistor Element Material: SILICON;
HFA3102BZ96 by Renesas Electronics

HFA3102BZ96

Renesas Electronics

HFA3102BZ96 by Renesas Electronics is an NPN RF BJT transistor with 6 elements and 14 terminals. It operates in the ultra-high frequency band up to 10GHz, ideal for amplifier applications. With a max collector-emitter voltage of 8V and a transition frequency of 10,000MHz, it offers high performance in a small outline package.
934064616115 by NXP Semiconductors

934064616115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;
MMBT5179 by National Semiconductor

MMBT5179

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;
MMBTH10LT1 by Shandong Yiguang Electronic Joint Stock

MMBTH10LT1

Shandong Yiguang Electronic Joint Stock

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Package Shape: RECTANGULAR; No. of Terminals: 3;
MPS5179RLRP by Onsemi

MPS5179RLRP

Onsemi

MPS5179RLRP by Onsemi is a NPN RF BJT with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.2W, hFE of 25, and fT of 900MHz. The transistor operates at up to 150 °C, with VCE(max) of 12V and IC(max) of 0.05A.
EC4H08C by Onsemi

EC4H08C

Onsemi

The Onsemi EC4H08C is an NPN RF BJT with a single configuration for surface mount applications. It features a max power dissipation of 0.05W, min DC current gain of 70, and max operating temp of 150 °C. Ideal for high-frequency circuits up to 18GHz in various electronic devices.
BFS17A,215 by NXP Semiconductors

BFS17A,215

NXP Semiconductors

NXP Semiconductors' BFS17A,215 is an NPN RF BJT transistor with a max fT of 2800 MHz. It has a small outline package style and can handle up to 15V collector-emitter voltage. Ideal for ultra-high frequency amplifier applications in surface mount configurations.
MMPQ2369R2 by Onsemi

MMPQ2369R2

Onsemi

The Onsemi MMPQ2369R2 is an NPN RF BJT with 4 elements, ideal for amplifier applications. It features a max operating temp of 150 °C, fT of 550 MHz, and hFE of 40. This transistor has a max VCE of 15V and IC of 0.5A, making it suitable for high-frequency circuits in small outline packages.
BLF871 by Ampleon Netherlands B V

BLF871

Ampleon Netherlands B V

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
2N4996 by Texas Instruments

2N4996

Texas Instruments

2N4996 by Texas Instruments is an NPN RF BJT with a max. collector-emitter voltage of 18V, ideal for amplifier applications in the VHF band. It has a min. DC current gain of 50 and operates at up to 150°C, with a transition frequency of 600MHz for high-frequency performance.
KSC1674R-C by Onsemi

KSC1674R-C

Onsemi

Onsemi's KSC1674R-C is an NPN BJT for RF applications. It features a VCEsat of 0.3V, hFE of 40, and fT of 600MHz. Ideal for ultra-high frequency amplification in through-hole packages with 3 terminals.
BFR92A by STMicroelectronics

BFR92A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;
BFR93A,235 by NXP Semiconductors

BFR93A,235

NXP Semiconductors

NXP Semiconductors' BFR93A,235 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 6000 MHz and hFE of 40. Ideal for amplifier applications, it has a max power dissipation of 0.35W and can handle up to 12V collector-emitter voltage.
BFR92PE6327 by Siemens

BFR92PE6327

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .03 A; Terminal Position: DUAL;