Aeroflex Microelectronic Solutions - MPN1000-12

  1. Home
  2. Aeroflex Microelectronic Solutions - MPN1000-12
MPN1000-12 by Aeroflex Microelectronic Solutions

Image shown is a representation only.

Manufacturer Aeroflex Microelectronic Solutions
Manufacturer's Part Number MPN1000-12
Description PIN DIODE; Surface Mount: YES; Reverse Test Voltage: 10 V; Nominal Diode Capacitance: .02 pF; Nominal Minority Carrier Lifetime: .08 us; Maximum Operating Temperature: 150 Cel;
Datasheet MPN1000-12 Datasheet
NAME DESCRIPTION
Nominal Minority Carrier Lifetime: .08 us
Reverse Test Voltage: 10 V
Diode Type: PIN DIODE
Minimum Breakdown Voltage: 100 V
Maximum Operating Temperature: 150 Cel
Sub-Category: PIN Diodes
Surface Mount: YES
Nominal Diode Capacitance: .02 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BAT18E6327 by Infineon Technologies

BAT18E6327

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
HSMP-3802-TR1 by Agilent Technologies

HSMP-3802-TR1

Agilent Technologies

Agilent HSMP-3802-TR1 is a PIN diode with 2 elements, 0.37 pF capacitance, and 50V reverse voltage. It's used in attenuators for RF applications at up to 150°C. Features include dual terminals, small outline package style, and positive-intrinsic-negative technology.
BAR64-07 by Infineon Technologies

BAR64-07

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;
BXY42TESN1SA1 by Infineon Technologies

BXY42TESN1SA1

Infineon Technologies

PIN DIODE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
JDP2S01U(TPH3) by Toshiba

JDP2S01U(TPH3)

Toshiba

PIN DIODE; Surface Mount: YES; Reverse Test Voltage: 1 V; Maximum Operating Temperature: 125 Cel; Minimum Breakdown Voltage: 30 V; Nominal Diode Capacitance: .9 pF;
934061244315 by NXP Semiconductors

934061244315

NXP Semiconductors

PIN DIODE;
1SV252(TE85L,F) by Toshiba

1SV252(TE85L,F)

Toshiba

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ISS238 by Toshiba

ISS238

Toshiba

PIN DIODE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR; Config: SINGLE;
BAP50-04W by NXP Semiconductors

BAP50-04W

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAP65-05,215 by NXP Semiconductors

BAP65-05,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
JDP2S02AFS by Toshiba

JDP2S02AFS

Toshiba

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAP51-02,115 by NXP Semiconductors

BAP51-02,115

NXP Semiconductors

The NXP Semiconductors BAP51-02,115 is a PIN diode with a max diode capacitance of 0.55 pF and a forward resistance of 2.5 ohm. It operates b/w -65 to 150 °C and has a breakdown voltage of 60 V, making it suitable for RF switches, attenuators, and phase shifters in various applications.
BAP50-03,115 by NXP Semiconductors

BAP50-03,115

NXP Semiconductors

The NXP Semiconductors BAP50-03,115 is a PIN diode with a max forward resistance of 5 ohm and diode capacitance of 0.55 pF. It operates b/w -65 to 150 °C and has a breakdown voltage of 50 V. Ideal for RF switches, attenuators, and phase shifters in communication systems.
MA4P7002F-1072T by TE Connectivity

MA4P7002F-1072T

TE Connectivity

TE Connectivity's MA4P7002F-1072T is a PIN diode with 100V reverse test voltage, 0.8 ohm max forward resistance, and 175°C operating temp. Ideal for RF switches, attenuators, and phase shifters in applications requiring high-speed switching and low insertion loss.
BAR81W-E6327 by Infineon Technologies

BAR81W-E6327

Infineon Technologies

PIN DIODE; Surface Mount: YES; Diode Resistive Test Frequency: 100 MHz; Reverse Test Voltage: 1 V; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
BAP65-02,135 by NXP Semiconductors

BAP65-02,135

NXP Semiconductors

BAP65-02,135 by NXP Semiconductors is a surface mount PIN diode with a max operating temp of 150 °C and a reverse test voltage of 0V. It features low forward resistance (0.95Ω) and nominal capacitance (0.65pF). Ideal for RF applications, it ensures efficient signal processing.
BAT18,235 by NXP Semiconductors

BAT18,235

NXP Semiconductors

BAT18,235 by NXP Semiconductors is a surface mount PIN diode with a reverse test voltage of 20V and max operating temp of 125 °C. It features low forward resistance of 0.7Ω and nominal capacitance of 0.8pF, ideal for RF applications.
BXY43-T1S by Infineon Technologies

BXY43-T1S

Infineon Technologies

PIN DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAR17 by Infineon Technologies

BAR17

Infineon Technologies

PIN DIODE; Surface Mount: YES; No. of Elements: 1; Diode Resistive Test Frequency: 100 MHz; Maximum Diode Forward Resistance: 1200 ohm; JESD-609 Code: e0;
HSMP-3824-TR2G by Agilent Technologies

HSMP-3824-TR2G

Agilent Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;