Agilent Technologies - MGA-565P8-TR1G

  1. Home
  2. Agilent Technologies - MGA-565P8-TR1G
MGA-565P8-TR1G by Agilent Technologies

Image shown is a representation only.

Manufacturer Agilent Technologies
Manufacturer's Part Number MGA-565P8-TR1G
Description WIDE BAND LOW POWER; Gain: 20 dB; Construction: COMPONENT; Maximum Input Power (CW): 15 dBm; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 3500 MHz;
Datasheet MGA-565P8-TR1G Datasheet
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: COMPONENT
Maximum Input Power (CW): 15 dBm
Maximum Operating Frequency: 3500 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 20 dB
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MW7IC2725NBR1 by NXP Semiconductors

MW7IC2725NBR1

NXP Semiconductors

NXP Semiconductors' MW7IC2725NBR1 is a 50 ohm RF amplifier with 25.5 dB gain, operating from 2300-2700 MHz. It can handle up to 22 dBm CW input power and has a VSWR of 10, making it ideal for narrowband high-power applications in RF and microwave systems.
MMZ25332BT1 by NXP Semiconductors

MMZ25332BT1

NXP Semiconductors

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.
MAX2691EWS+T by Analog Devices

MAX2691EWS+T

Analog Devices

MAX2691EWS+T by Analog Devices is a BICMOS RF amplifier with 13.1 dB gain, operating at 1.8/3.3V. It is a wide band low power device suitable for surface mount applications in RF & Microwave systems, offering a characteristic impedance of 50 ohm and temperature range from -40 to 85°C.
HMC516 by Analog Devices

HMC516

Analog Devices

Analog Devices' HMC516 is a GAAS RF amplifier with 18dB gain, operating from 7-17GHz. It has a max input power of 5dBm and requires a 3V supply, drawing 88mA. Ideal for wideband low-power applications in RF & microwave systems due to its high performance and gold terminal finish.
SBB2089ZSR by Qorvo

SBB2089ZSR

Qorvo

Qorvo's SBB2089ZSR is a wide band low power RF amplifier with 18.5 dB gain, suitable for frequencies ranging from 50 MHz to 850 MHz. It operates at temperatures b/w -40°C to 85°C and can handle a max input power of 24 dBm. This component is ideal for applications requiring high performance in RF and microwave systems.
AD8350ARMZ15-REEL7 by Analog Devices

AD8350ARMZ15-REEL7

Analog Devices

AD8350ARMZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
MMZ09332BT1 by Freescale Semiconductor

MMZ09332BT1

Freescale Semiconductor

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 29 dBm; Minimum Operating Frequency: 130 MHz; Characteristic Impedance: 50 ohm; Gain: 28.7 dB; Maximum Operating Frequency: 1000 MHz;
HMC506LP4ETR by Analog Devices

HMC506LP4ETR

Analog Devices

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
MGA-62563-BLKG by Agilent Technologies

MGA-62563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3/5;
M67799HA by Mitsubishi Electric

M67799HA

Mitsubishi Electric

Mitsubishi Electric's M67799HA is a hybrid module with 450-470 MHz frequency range, 50 ohm impedance, and 14.77 dBm CW input power. Ideal for narrowband high-power RF applications, it operates b/w -30 to 100°C with VSWR of up to 20 in plastic/epoxy package.
ADL8106ACEZ by Analog Devices

ADL8106ACEZ

Analog Devices

WIDE BAND LOW POWER;
MAX9931EUA+T by Maxim Integrated

MAX9931EUA+T

Maxim Integrated

MAX9931EUA+T by Maxim Integrated is a wide band low power RF amplifier with 50 ohm impedance. It operates from 2 MHz to 1600 MHz, handling up to 16 dBm CW input power. Ideal for RF and microwave applications, it has a temperature range of -40°C to 85°C.
MGA-31189-BLKG by Broadcom

MGA-31189-BLKG

Broadcom

Broadcom's MGA-31189-BLKG is a GAAS RF amplifier with 19dB gain, operating from 50MHz to 2000MHz. It has a max input power of 25dBm and requires a 5V power supply. Ideal for wideband medium-power applications, this component features surface mounting and a characteristic impedance of 50Ω.
HMC-ALH244 by Hittite Microwave

HMC-ALH244

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Frequency: 40000 MHz; Minimum Operating Temperature: -55 Cel; Additional Features: LOW NOISE; JESD-609 Code: e4; Minimum Operating Frequency: 24000 MHz;
HMC429LP4E by Hittite Microwave

HMC429LP4E

Hittite Microwave

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;
TQP3M9009 by Triquint Semiconductor

TQP3M9009

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 150 mA;
MAR-8ASM+ by Mini-circuits

MAR-8ASM+

Mini-circuits

MAR-8ASM+ by Mini-circuits is a wide band low power RF amplifier with 20 dB gain. It operates from 0 to 1000 MHz, handling up to 13 dBm CW input power. Ideal for RF & microwave applications, it features a compact surface mount package and operates in temperatures ranging from -40°C to 85°C.
HMC606LC5 by Analog Devices

HMC606LC5

Analog Devices

Analog Devices' HMC606LC5 is a wide band low power RF amplifier with 9.5 dB gain and 15 dBm CW input power. Operating from 2-18 GHz, it has 32 terminals, consumes 95 mA at 5V, and features GaAs technology in a ceramic package. Ideal for RF & microwave applications requiring high performance amplification in a compact form factor.
HMC797APM5E by Analog Devices

HMC797APM5E

Analog Devices

HMC797APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. With a VSWR of 7, it operates from 0 to 22000 MHz, making it ideal for high-frequency applications in RF and microwave systems. The component has a temperature range of -40 to 85°C and features nickel palladium gold terminal finish.
HMC636ST89 by Hittite Microwave

HMC636ST89

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;