
Image shown is a representation only.
Manufacturer | Alliance Memory |
---|---|
Manufacturer's Part Number | AS4C512M16D3L-12BCN |
Description | DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; |
Datasheet | AS4C512M16D3L-12BCN Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Standby Current: | .011 Amp |
Organization: | 512MX16 |
Output Characteristics: | 3-STATE |
Maximum Seated Height: | 1.2 mm |
Access Mode: | MULTI BANK PAGE BURST |
Minimum Supply Voltage (Vsup): | 1.283 V |
Sub-Category: | DRAMs |
Surface Mount: | YES |
Maximum Supply Current: | 220 mA |
Terminal Finish: | Tin/Silver/Copper (Sn/Ag/Cu) |
No. of Terminals: | 96 |
Maximum Clock Frequency (fCLK): | 800 MHz |
No. of Words: | 536870912 words |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
Technology: | CMOS |
JESD-30 Code: | R-PBGA-B96 |
Package Shape: | RECTANGULAR |
Terminal Form: | BALL |
Operating Mode: | SYNCHRONOUS |
Maximum Operating Temperature: | 85 Cel |
Package Code: | TFBGA |
Width: | 9 mm |
Moisture Sensitivity Level (MSL): | 3 |
Input/Output Type: | COMMON |
No. of Ports: | 1 |
Memory Density: | 8589934592 bit |
Self Refresh: | YES |
Sequential Burst Length: | 8 |
Memory IC Type: | DDR3L DRAM |
JESD-609 Code: | e1 |
Minimum Operating Temperature: | 0 Cel |
Memory Width: | 16 |
No. of Functions: | 1 |
Qualification: | Not Qualified |
Package Equivalence Code: | BGA96,9X16,32 |
Refresh Cycles: | 8192 |
Interleaved Burst Length: | 8 |
Length: | 14 mm |
Maximum Access Time: | .225 ns |
No. of Words Code: | 512M |
Nominal Supply Voltage / Vsup (V): | 1.35 |
Additional Features: | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY |
Terminal Pitch: | .8 mm |
Temperature Grade: | OTHER |
Maximum Supply Voltage (Vsup): | 1.45 V |
Power Supplies (V): | 1.35 |