Alpha Industries - SMV1265-011

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

1N5451 by Onsemi is a Varactor Diode with 39pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 200; Nominal Diode Capacitance: .9 pF; Maximum Repetitive Peak Reverse Voltage: 20 V;

The Toshiba 1SV204 is a single varactor diode with a max reverse current of 0.01 uA and min breakdown voltage of 30 V. It operates in the very high frequency to ultra high frequency band, making it suitable for applications requiring variable capacitance diodes in small outline packages. The diode's silicon element material and flat terminal form enhance its performance up to an operating temperature of 125 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5446 by Onsemi is a Varactor Diode with a Min Quality Factor of 350, Max Reverse Current of 0.02 uA, and Nominal Diode Capacitance of 18 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 19.75 pF; Maximum Repetitive Peak Reverse Voltage: 30 V;

1N5450 by Onsemi is a varactor diode with a min quality factor of 350, max reverse current of 0.02 uA, and nominal capacitance of 33 pF. It is used in applications requiring variable capacitance diodes for tuning circuits due to its abrupt variable capacitance classification.

SMV1231-040LF by Skyworks: Varactor Diode, Hyperabrupt, S Band. Ideal for RF applications due to its high capacitance ratio and low breakdown voltage. Surface mount chip carrier package with silicon diode element material.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 15; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .45 pF;

VARIABLE CAPACITANCE DIODE;

BB199 by NXP Semiconductors is a variable capacitance diode ideal for RF applications. It features a nominal capacitance of 39.5 pF, operates b/w -65 °C to 150 °C, and has a max power dissipation of 0.3 W. Its compact design ensures efficient surface mounting in various circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

The Onsemi SVC353S is a Varactor Diode with 3 elements, common cathode config, and min. quality factor of 200. It has a min. breakdown voltage of 16V and diode cap tolerance of 3.31%. Ideal for applications requiring variable capacitance diodes in surface mount packages.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .1 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 35;