Alpha & Omega Semiconductor - AO4447A

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AO4447A by Alpha & Omega Semiconductor

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Manufacturer Alpha & Omega Semiconductor
Manufacturer's Part Number AO4447A
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Minimum DS Breakdown Voltage: 30 V; Terminal Form: GULL WING;
Datasheet AO4447A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 17 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 3.1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 3.1 W
Maximum Drain-Source On Resistance: .007 ohm
Other Names: 785-1198-6
5202-AO4447ATR
785-1198-2
785-1198-1
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): NOT SPECIFIED
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