Ampleon Netherlands B V - BLF640U

  1. Home
  2. Ampleon Netherlands B V - BLF640U
BLF640U by Ampleon Netherlands B V

Image shown is a representation only.

Manufacturer Ampleon Netherlands B V
Manufacturer's Part Number BLF640U
Description RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet BLF640U Datasheet
In Stock861
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
861 - -

Popular Products

Category Top Products

A3G22H400-04SR3 by NXP Semiconductors

A3G22H400-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: GALLIUM NITRIDE; Minimum Operating Temperature: -55 Cel; Terminal Form: FLAT;
934065978112 by NXP Semiconductors

934065978112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4;
TGF2023-2-02 by Qorvo

TGF2023-2-02

Qorvo

Qorvo's TGF2023-2-02 is an N-channel RF Power FET for amplifier applications in KU band. Featuring GaN technology, it has a max ID of 2.5A and operates in depletion mode. This single-configured transistor is surface-mountable with Ni/Au terminal finish.
CGH40006S by Wolfspeed

CGH40006S

Wolfspeed

CGH40006S by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for C BAND applications. Featuring Gallium Nitride technology, it operates in Enhancement Mode with a SINGLE configuration and SMALL OUTLINE package style for surface mount assembly.
STAC0912-250 by STMicroelectronics

STAC0912-250

STMicroelectronics

STAC0912-250 by STMicroelectronics is an N-channel RF Power FET with 80V DS breakdown voltage. It operates in enhancement mode for L Band applications, featuring a plastic/epoxy package and flat terminals. Ideal for amplifier circuits, this single configuration transistor is surface mountable with a source case connection.
PTFA180701EV4R250XTMA1 by Wolfspeed

PTFA180701EV4R250XTMA1

Wolfspeed

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
A3G35H100-04SR3 by NXP Semiconductors

A3G35H100-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL; Maximum Operating Temperature: 225 Cel;
A5G38H045NT4 by NXP Semiconductors

A5G38H045NT4

NXP Semiconductors

RF Power Field-Effect Transistors;
A2T08VD021NT1 by NXP Semiconductors

A2T08VD021NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: Tin (Sn);
PD55035STR1-E by STMicroelectronics

PD55035STR1-E

STMicroelectronics

RF Power Field-Effect Transistors;
SD2943W by STMicroelectronics

SD2943W

STMicroelectronics

SD2943W by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 648W max power dissipation. Ideal for high-power applications, it operates at up to 200°C and features metal-oxide semiconductor technology.
MRF255 by Motorola

MRF255

Motorola

MRF255 by Motorola is an N-CHANNEL RF Power FET with 13 dB Gp for AMPLIFIER applications. It operates in ENHANCEMENT MODE at VERY HIGH FREQUENCY BAND, handling up to 22 A ID and dissipating 175 W at max temp of 200 °C.
934061172118 by NXP Semiconductors

934061172118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLATPACK; Highest Frequency Band: S BAND;
PD54008TR-E by STMicroelectronics

PD54008TR-E

STMicroelectronics

PD54008TR-E by STMicroelectronics is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with a max ID of 5A and 73W power dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR technology, and can withstand temperatures up to 165°C.
BLF6G15LS-500H by NXP Semiconductors

BLF6G15LS-500H

NXP Semiconductors

BLF6G15LS-500H by NXP is an N-channel RF power FET designed for switching applications. It features a max drain current of 45 A, a breakdown voltage of 100 V, and operates in the L band. Its flatpack design ensures efficient surface mounting in various electronic devices.
SD2900 by STMicroelectronics

SD2900

STMicroelectronics

SD2900 by STMicroelectronics is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 0.9A. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE and SILICON element material.
AFT05MP075NR1 by NXP Semiconductors

AFT05MP075NR1

NXP Semiconductors

NXP Semiconductors' AFT05MP075NR1 is an N-CHANNEL RF Power FET with 690W power dissipation. It features METAL-OXIDE SEMICONDUCTOR tech, operates up to 225°C, and is surface mountable. Ideal for high-power RF applications in various industries.
CLF1G0035S-100 by NXP Semiconductors

CLF1G0035S-100

NXP Semiconductors

RF Power Field-Effect Transistors;
PTFA080551EV4R250XTMA1 by Infineon Technologies

PTFA080551EV4R250XTMA1

Infineon Technologies

PTFA080551EV4R250XTMA1 by Infineon is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18dB Power Gain. It operates in the Ultra High Frequency Band, ideal for amplifier applications. The transistor features a ceramic-metal package, flat terminals, and can withstand temperatures up to 200°C.
934061559112 by NXP Semiconductors

934061559112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 18 A; Terminal Position: DUAL; No. of Elements: 1;