5962L0924402VHA by Analog Devices | Amplifiers

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Manufacturer	Analog Devices
Manufacturer's Part Number	5962L0924402VHA
Description	OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 10; Package Code: DFP; Package Shape: RECTANGULAR;
In Stock	961

NAME	DESCRIPTION
Package Body Material:	Ceramic, Glass-Sealed
Maximum Supply Voltage Limit:	68 V
Sub-Category:	Operational Amplifiers
Surface Mount:	Yes
Minimum Operating Temperature:	-55 °C (-67 °F)
Maximum Average Bias Current (IIB):	220 uA
No. of Functions:	1
No. of Terminals:	10
Total Dose (V):	50k Rad(Si)
Maximum Input Offset Voltage:	2000 uV
Qualification:	Yes
Terminal Position:	Dual
Package Style (Meter):	Flatpack
Screening Level:	MIL-PRF-38535 Class V
JESD-30 Code:	R-GDFP-F10
Package Shape:	Rectangular
Terminal Form:	Flat
Nominal Supply Voltage / Vsup (V):	15 V
Maximum Operating Temperature:	125 °C (257 °F)
Package Code:	DFP
Amplifier Type:	Operational Amplifier
Temperature Grade:	Military

Pricing (USD)

Qty.	Unit Price	Ext. Price
961	-	-

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Nominal Common Mode Reject Ratio: 96 dB;