ADG411TCHIPS by Analog Devices | Other Function Semiconductors

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Manufacturer	Analog Devices
Manufacturer's Part Number	ADG411TCHIPS
Description	SPST; Temperature Grade: MILITARY; No. of Terminals: 16; Package Code: DIE; Package Shape: UNSPECIFIED; Surface Mount: YES;
Datasheet	ADG411TCHIPS Datasheet
In Stock	749

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Minimum Negative Supply Voltage (Vsup):	-13.5 V
Minimum Supply Voltage (Vsup):	13.5 V
Maximum Switch-on Time:	175 ns
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	16
Maximum On-state Resistance (Ron):	35 ohm
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
Technology:	CMOS
JESD-30 Code:	X-XUUC-N16
Package Shape:	UNSPECIFIED
Terminal Form:	NO LEAD
Maximum Operating Temperature:	125 Cel
No. of Channels:	1
Package Code:	DIE
Nominal Supply Voltage (Vsup):	15 V
Nominal Off-state Isolation:	68 dB
Maximum Switch-off Time:	145 ns
Nominal Negative Supply Voltage (Vsup):	-15 V
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Maximum Negative Supply Voltage (Vsup):	-16.5 V
No. of Functions:	4
Qualification:	Not Qualified
Other IC type:	SPST
Temperature Grade:	MILITARY
Maximum Supply Voltage (Vsup):	16.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
749	-	-

DS18B20U by Maxim Integrated is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;