ADIN1100BCPZ-R7 by Analog Devices | Telecommunications

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Manufacturer	Analog Devices
Manufacturer's Part Number	ADIN1100BCPZ-R7
Description	ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 40; Package Code: HVQCCN; Package Shape: SQUARE;
Datasheet	ADIN1100BCPZ-R7 Datasheet
In Stock	17,775

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Nominal Supply Voltage:	1.1 V
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	.8 mm
Surface Mount:	YES
No. of Terminals:	40
No. of Transceivers:	1
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
Data Rate:	10 Mbps
JESD-30 Code:	S-XQCC-N40
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Maximum Operating Temperature:	85 Cel
Package Code:	HVQCCN
Width:	6 mm
Moisture Sensitivity Level (MSL):	3
Telecom IC Type:	ETHERNET TRANSCEIVER
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Package Equivalence Code:	LCC40,.24SQ,20
Length:	6 mm
Additional Features:	ESD FOR TXN, TXP, RXN, RXP Pins is 3B
Peak Reflow Temperature (C):	260
Terminal Pitch:	.5 mm
Temperature Grade:	INDUSTRIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
17,775	-	-

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;

MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;