Analog Devices - ADL5571ACPZ-R7

  1. Home
  2. Analog Devices - ADL5571ACPZ-R7
ADL5571ACPZ-R7 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number ADL5571ACPZ-R7
Description NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Construction: COMPONENT;
Datasheet ADL5571ACPZ-R7 Datasheet
In Stock881
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 2500 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 10
No. of Terminals: 16
Package Equivalence Code: LCC16,.16SQ,25
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 2700 MHz
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Gain: 29 dB
Power Supplies (V): 3.5/5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
881 $4.330 $3,814.730

Popular Products

Category Top Products

RF2172TR7 by Rf Micro Devices

RF2172TR7

Rf Micro Devices

RF2172TR7 by Rf Micro Devices is a GAAS technology RF amplifier with 16 terminals, operating at 3.6V. It is a narrow band medium power device for surface mount applications in RF and microwave systems.
SMA70-2 by Wj Communications

SMA70-2

Wj Communications

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -54 Cel; Maximum Operating Temperature: 85 Cel;
MAX2630EUS+T by Maxim Integrated

MAX2630EUS+T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Voltage Standing Wave Ratio: 1.25;
MGA-72543-TR1 by Hewlett Packard

MGA-72543-TR1

Hewlett Packard

WIDE BAND LOW POWER; Additional Features: LOW NOISE; Construction: COMPONENT; Maximum Operating Frequency: 6000 MHz; Characteristic Impedance: 50 ohm; Gain: 9.2 dB;
SBB5089Z by Qorvo

SBB5089Z

Qorvo

Qorvo's SBB5089Z is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and requires a 5V power supply. Ideal for wideband low-power applications in RF and microwave systems.
HMC460LC5 by Analog Devices

HMC460LC5

Analog Devices

Analog Devices' HMC460LC5 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handling up to 18 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.
HMC1040CHIPS-SX by Analog Devices

HMC1040CHIPS-SX

Analog Devices

HMC1040CHIPS-SX by Analog Devices is a wide band low power RF amplifier with a gain of 19 dB. It operates in a frequency range of 20-44 GHz and can handle max input power of 5 dBm. This component is suitable for applications requiring RF amplification in the microwave frequency range.
MMZ09312BT1 by Freescale Semiconductor

MMZ09312BT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
MGA-62563-BLK by Broadcom

MGA-62563-BLK

Broadcom

Broadcom's MGA-62563-BLK is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and operates on 3/5V supplies with a max current draw of 77mA.
MSA-1105-TR1 by Agilent Technologies

MSA-1105-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 70 mA;
HMC1040LP3CETR by Analog Devices

HMC1040LP3CETR

Analog Devices

Analog Devices' HMC1040LP3CETR is a wide band low power RF amplifier with 17 dB gain, operating from 24-43.5 GHz. It has a max input power of 5 dBm and operates on a 2.5 V supply, making it ideal for high-frequency communication systems in various applications.
CMD283C3 by Custom Mmic Design Services

CMD283C3

Custom Mmic Design Services

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Maximum Input Power (CW): 20 dBm; Gain: 18 dB; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Construction: COMPONENT;
A33 by M/a-com

A33

M/a-com

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; No. of Functions: 1; Package Equivalence Code: CAN4,.3; Maximum Supply Current: 16 mA;
ADL9006ACGZN by Analog Devices

ADL9006ACGZN

Analog Devices

RF/Microwave Amplifiers;
MW7IC2750NBR1 by NXP Semiconductors

MW7IC2750NBR1

NXP Semiconductors

The NXP Semiconductors MW7IC2750NBR1 is a narrow band high power RF amplifier with a gain of 24 dB. It operates within the frequency range of 2500-2700 MHz and can handle a max input power of 30 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.
MGA-86576-TR1G by Agilent Technologies

MGA-86576-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; JESD-609 Code: e3;
AM-147-PIN by Tyco Electronics M/a-com

AM-147-PIN

Tyco Electronics M/a-com

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 500 MHz; Gain: 15.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM;
GALI-6F+F55 by Mini-circuits

GALI-6F+F55

Mini-circuits

GALI-6F+F55 by Mini-circuits is a RF & Microwave Amplifier with 4.8V power supply, operating from -45°C to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for applications requiring high-frequency signal amplification in various electronic systems.
HMC414MS8GE by Analog Devices

HMC414MS8GE

Analog Devices

Analog Devices' HMC414MS8GE is a narrow band medium power RF amplifier with 17 dB gain, operating from 2200 to 2800 MHz. It can handle up to 17 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.
HMC287MS8ETR by Analog Devices

HMC287MS8ETR

Analog Devices

Analog Devices' HMC287MS8ETR is a GaAs RF amplifier with 3V supply, 15mA max current, and -40 to 85°C operating range. Ideal for narrowband low-power applications, it features a surface-mount package suitable for RF and microwave circuits.