Analog Devices - ADL8106ACEZ

  1. Home
  2. Analog Devices - ADL8106ACEZ
ADL8106ACEZ by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number ADL8106ACEZ
Description WIDE BAND LOW POWER;
Datasheet ADL8106ACEZ Datasheet
In Stock346
NAME DESCRIPTION
RF or Microwave Device Type: WIDE BAND LOW POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
346 - -

Popular Products

Category Top Products

HMC451LC3 by Analog Devices

HMC451LC3

Analog Devices

HMC451LC3 by Analog Devices is a wide band low power RF amplifier with 14 dB gain and operates b/w 5-20 GHz. It has a max input power of 10 dBm, requires 5V supply, and features a surface mount package ideal for RF & microwave applications.
HMC637ALP5ETR by Analog Devices

HMC637ALP5ETR

Analog Devices

Analog Devices' HMC637ALP5ETR is a wide band medium power RF amplifier with 12 dB gain and 25 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 0 to 6000 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
MGA-81563-BLKG by Agilent Technologies

MGA-81563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
6003 by Teledyne Technologies

6003

Teledyne Technologies

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 7;
TQP3M9037 by Triquint Semiconductor

TQP3M9037

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Characteristic Impedance: 50 ohm;
CMD264 by Qorvo

CMD264

Qorvo

WIDE BAND LOW POWER;
HMC963LC4TR-R5 by Analog Devices

HMC963LC4TR-R5

Analog Devices

Analog Devices' HMC963LC4TR-R5 is a wide band low power RF amplifier with 16.5 dB gain, operating frequency range of 6-26.5 GHz, and 50 ohm impedance. It features PHEMT technology, ceramic package, and can handle up to 0 dBm input power. Ideal for RF & microwave applications requiring high performance in compact designs.
HMC751LC4TR by Hittite Microwave

HMC751LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Characteristic Impedance: 50 ohm;
CMPA5585030F by Wolfspeed

CMPA5585030F

Wolfspeed

WIDE BAND LOW POWER;
VMMK-2503-TR1G by Broadcom

VMMK-2503-TR1G

Broadcom

VMMK-2503-TR1G by Broadcom is a GAAS technology RF amplifier with 12.5 dB gain, operating from 1000 to 12000 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.
XP1044-QL-0N00 by M/a-com Technology Solutions

XP1044-QL-0N00

M/a-com Technology Solutions

XP1044-QL-0N00 by M/a-com Technology Solutions is a RF & Microwave Amplifier with 16.5 dB Gain, 23 dBm Max Input Power (CW), and operates b/w 3500-6000 MHz. Ideal for narrow band medium power applications due to its COMPONENT construction and Matte Tin (Sn) terminal finish.
MW7IC930NR1 by NXP Semiconductors

MW7IC930NR1

NXP Semiconductors

The NXP Semiconductors MW7IC930NR1 is a MOS RF amplifier with 33 dB gain, operating b/w 920-960 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications at 28V supply voltage.
MSA-0686-BLK by Hewlett Packard

MSA-0686-BLK

Hewlett Packard

WIDE BAND LOW POWER; Additional Features: HIGH RELIABILITY; Gain: 16.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 800 MHz;
MAX2659ELT+T by Maxim Integrated

MAX2659ELT+T

Maxim Integrated

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Minimum Operating Temperature: -40 Cel;
RF3827SR by Rf Micro Devices

RF3827SR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 20; Construction: COMPONENT; Gain: 20.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: LOW NOISE;
CMD192C5 by Custom Mmic Design Services

CMD192C5

Custom Mmic Design Services

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Gain: 17 dB; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Additional Features: LOW NOISE;
MAAM-011109-TR1000 by M/a-com Technology Solutions

MAAM-011109-TR1000

M/a-com Technology Solutions

MAAM-011109-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 8 dB gain, operating from 10 MHz to 40 GHz. It can handle up to 17 dBm CW input power and has a temperature range of -40°C to +85°C. Ideal for RF and microwave applications requiring high performance in a compact form factor.
GALI-6+ by Mini-circuits

GALI-6+

Mini-circuits

GALI-6+ by Mini-circuits is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 20 dBm input power. Ideal for RF & microwave applications requiring compact surface mount amplification.
HMC499LC4 by Hittite Microwave

HMC499LC4

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 9 dB;
AM-147-PIN by Tyco Electronics M/a-com

AM-147-PIN

Tyco Electronics M/a-com

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 500 MHz; Gain: 15.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM;