ADM1345JN by Analog Devices | Interface ICs

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Manufacturer	Analog Devices
Manufacturer's Part Number	ADM1345JN
Description	LINE TRANSCEIVER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR;
Datasheet	ADM1345JN Datasheet
In Stock	431

NAME	DESCRIPTION
Minimum Supply Voltage:	4.75 V
Package Body Material:	PLASTIC/EPOXY
Nominal Supply Voltage:	5 V
Maximum Seated Height:	6.35 mm
Minimum Out Swing:	.44 V
Sub-Category:	Line Driver or Receivers
Surface Mount:	NO
Maximum Supply Current:	170 mA
Terminal Finish:	TIN LEAD
No. of Terminals:	28
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Technology:	CMOS
JESD-30 Code:	R-PDIP-T28
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	70 Cel
Package Code:	DIP
Interface Standard:	V.35
Interface IC Type:	LINE TRANSCEIVER
Width:	15.24 mm
Maximum Output Low Current:	4 Amp
Input Characteristics:	DIFFERENTIAL SCHMITT TRIGGER
Driver No. of Bits:	3
Maximum Supply Voltage:	5.25 V
Differential Output:	YES
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
No. of Functions:	3
Qualification:	Not Qualified
Maximum Transmit Delay:	70 ns
Package Equivalence Code:	DIP28,.6
Receiver No. of Bits:	3
Length:	37.4 mm
Maximum Receive Delay:	100 ns
Terminal Pitch:	2.54 mm
Temperature Grade:	COMMERCIAL
Power Supplies (V):	5

Pricing (USD)

Qty.	Unit Price	Ext. Price
431	-	-

LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;