DS1220AB by Analog Devices | Memory ICs

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Manufacturer	Analog Devices
Manufacturer's Part Number	DS1220AB
Description	NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 24; Package Code: DIP; Package Shape: RECTANGULAR; Length: 33.782 mm;
Datasheet	DS1220AB Datasheet
In Stock	726

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	2KX8
Maximum Seated Height:	9.398 mm
Minimum Supply Voltage (Vsup):	4.75 V
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	24
No. of Words:	2048 words
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Technology:	CMOS
JESD-30 Code:	R-PDIP-T24
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	DIP
Width:	15.24 mm
Memory Density:	16384 bit
Memory IC Type:	NON-VOLATILE SRAM MODULE
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
Memory Width:	8
No. of Functions:	1
Qualification:	Not Qualified
Length:	33.782 mm
Maximum Access Time:	200 ns
No. of Words Code:	2K
Nominal Supply Voltage / Vsup (V):	5
Additional Features:	BATTERY BACK-UP
Parallel or Serial:	PARALLEL
Terminal Pitch:	2.54 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	5.25 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
726	-	-

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Qualification Status: Not Qualified; JESD-30 Code: R-PSFM-T3;

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;