DS1230W-100+ by Analog Devices | Memory ICs

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Manufacturer	Analog Devices
Manufacturer's Part Number	DS1230W-100+
Description	NON-VOLATILE SRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Memory Width: 8;
In Stock	1,894

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.00025 Amp
Organization:	256KX8
Maximum Seated Height:	10.668 mm
Minimum Supply Voltage (Vsup):	3 V
Sub-Category:	SRAMs
Surface Mount:	NO
Maximum Supply Current:	50 mA
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	28
No. of Words:	262144 words
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Technology:	CMOS
JESD-30 Code:	R-PDIP-T28
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	DIP
Width:	15.24 mm
Memory Density:	2097152 bit
Memory IC Type:	NON-VOLATILE SRAM MODULE
JESD-609 Code:	e3
Minimum Operating Temperature:	0 Cel
Memory Width:	8
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	DIP28,.6
Length:	38.225 mm
Maximum Access Time:	100 ns
No. of Words Code:	256K
Nominal Supply Voltage / Vsup (V):	3.3
Additional Features:	10 YEAR DATA RETENTION
Parallel or Serial:	PARALLEL
Terminal Pitch:	2.54 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	3.6 V
Power Supplies (V):	3.3

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,894	$32.080	$60,759.520

Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;

Other Regulators; No. of Terminals: 3; No. of Outputs: 1; Surface Mount: NO; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel;

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;