Analog Devices - HMC1126-SX

  1. Home
  2. Analog Devices - HMC1126-SX
HMC1126-SX by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC1126-SX
Description WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 22 dBm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;
Datasheet HMC1126-SX Datasheet
In Stock142
NAME DESCRIPTION
Other Names: 1127-3340-ND
1127-3340
-2735-HMC1126-SX
505-HMC1126-SX
HMC1126-SX-ND
Construction: COMPONENT
Maximum Input Power (CW): 22 dBm
Minimum Operating Frequency: 2000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 50000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: -55 Cel
Gain: 8 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
142 $367.519 $52,187.698

Popular Products

Category Top Products

HMC943APM5E by Analog Devices

HMC943APM5E

Analog Devices

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
MSA-1105-TR1G by Agilent Technologies

MSA-1105-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1300 MHz; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB;
HMC465LP5E by Hittite Microwave

HMC465LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.
TQP3M9035 by Qorvo

TQP3M9035

Qorvo

The Qorvo TQP3M9035 is a wide band medium power RF amplifier with 15 dB gain, suitable for frequencies ranging from 50 MHz to 6 GHz. It can handle up to 23 dBm of CW input power and operates in temperatures from -40°C to 85°C. Ideal for RF and microwave applications requiring high performance amplification.
MMZ25332BT1 by NXP Semiconductors

MMZ25332BT1

NXP Semiconductors

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.
HMC963LC4TR by Hittite Microwave

HMC963LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 26500 MHz; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 0 dBm;
SMA70-2 by Tyco Electronics M/a-com

SMA70-2

Tyco Electronics M/a-com

WIDE BAND LOW POWER; Maximum Operating Frequency: 250 MHz; Construction: COMPONENT; Minimum Operating Frequency: 10 MHz; Additional Features: LOW NOISE; Gain: 6.5 dB;
TGA2214 by Qorvo

TGA2214

Qorvo

Qorvo's TGA2214 is a wide band high power RF amplifier with 22 dB gain, operating from 2-18 GHz. It can handle up to 31 dBm CW input power and operates in temperatures ranging from -40 to 85°C. Ideal for applications requiring high power amplification in RF and microwave systems.
SPF-5122Z by Sirenza Microdevices

SPF-5122Z

Sirenza Microdevices

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 100 MHz; Maximum Operating Frequency: 4000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 27 dBm; Gain: 6.4 dB;
ZHL-1-2W by Mini-circuits

ZHL-1-2W

Mini-circuits

ZHL-1-2W by Mini-circuits is a COAXIAL RF amplifier with 29 dB Gain, 10 dBm CW input power, and VSWR of 2. Ideal for wideband high-power applications from 5 MHz to 500 MHz. Operating temperature range: -20°C to +65°C.
QPA4501SR by Qorvo

QPA4501SR

Qorvo

Qorvo's QPA4501SR is a GAN RF amplifier with 26dB gain, operating from 4400-5000MHz. It offers 12dBm CW input power and VSWR of 10, suitable for narrowband high-power applications in RF & microwave systems. The component has 36 terminals, surface-mountable in plastic/epoxy package for easy integration.
BGA427H6327XTSA1 by Infineon Technologies

BGA427H6327XTSA1

Infineon Technologies

BGA427H6327XTSA1 by Infineon Technologies is a RF amplifier with 18.5 dB gain, operating from 100 MHz to 1800 MHz. It has a max input power of -10 dBm and operates in temperatures ranging from -65°C to 150°C. This component is suitable for narrow band medium power applications.
MMG3H21NT1 by NXP Semiconductors

MMG3H21NT1

NXP Semiconductors

MMG3H21NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 18.3 dB gain and 50 ohm impedance. It operates from 0 to 6000 MHz, handles up to 12 dBm input power, and draws a max of 110 mA at 5 V. Ideal for applications requiring high-frequency signal amplification in compact setups.
TQP7M9105 by Triquint Semiconductor

TQP7M9105

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1500 MHz; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 50 MHz;
HMC816LP4ETR by Analog Devices

HMC816LP4ETR

Analog Devices

Analog Devices' HMC816LP4ETR is a GAAS technology RF amplifier with 2 functions, 24 terminals, and operates at temperatures from -40 to 85°C. It has a power supply of 5V and max supply current of 126mA. Ideal for wideband low-power RF or microwave applications due to its surface mount package body material made of plastic/epoxy.
LEE-29+ by Mini-circuits

LEE-29+

Mini-circuits

Mini-circuits LEE-29+ is a wideband low power RF amplifier with 13.3 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 1.6, suitable for various RF & microwave applications requiring amplification in the temperature range of -40 to 85°C.
MGA-81563-TR2G by Agilent Technologies

MGA-81563-TR2G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;
HMC1040CHIPS by Analog Devices

HMC1040CHIPS

Analog Devices

Analog Devices' HMC1040CHIPS is a wide band low power RF amplifier with 19 dB gain, suitable for frequencies ranging from 20-44 GHz. It can handle up to 5 dBm CW input power and operates in temperatures from -55 to 85°C. Ideal for RF and microwave applications requiring high performance amplification.
RF5110GTR7 by Rf Micro Devices

RF5110GTR7

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; JESD-609 Code: e3; Maximum Supply Current: 2400 mA;