Analog Devices - HMC1126-SX

  1. Home
  2. Analog Devices - HMC1126-SX
HMC1126-SX by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC1126-SX
Description WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 22 dBm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;
Datasheet HMC1126-SX Datasheet
In Stock142
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): 22 dBm
Minimum Operating Frequency: 2000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 50000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: -55 Cel
Gain: 8 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
142 $367.519 $52,187.698

Popular Products

Category Top Products

A33 by M/a-com Technology Solutions

A33

M/a-com Technology Solutions

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 13 dBm;
MGA-632P8-BLKG by Broadcom

MGA-632P8-BLKG

Broadcom

Broadcom's MGA-632P8-BLKG is a GAAS technology RF amplifier with 16dB gain, operating from 1400MHz to 3800MHz. It has a max input power of 20dBm and is ideal for wideband low-power applications. The component features surface mounting and matte tin terminal finish on an 8-terminal plastic/epoxy package body.
MGA-82563-BLKG by Broadcom

MGA-82563-BLKG

Broadcom

Broadcom's MGA-82563-BLKG is a GAAS RF amplifier with 8.8 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 1.2, suitable for wideband low-power applications in RF and microwave systems. The component is surface-mountable with a max supply current of 101 mA and operates b/w -40°C to 85°C.
TQP3M9035 by Qorvo

TQP3M9035

Qorvo

The Qorvo TQP3M9035 is a wide band medium power RF amplifier with 15 dB gain, suitable for frequencies ranging from 50 MHz to 6 GHz. It can handle up to 23 dBm of CW input power and operates in temperatures from -40°C to 85°C. Ideal for RF and microwave applications requiring high performance amplification.
TQP3M9008 by Triquint Semiconductor

TQP3M9008

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Construction: COMPONENT;
HELA-10+ by Mini-circuits

HELA-10+

Mini-circuits

HELA-10+ by Mini-circuits is a wideband medium power RF amplifier with 9.5 dB gain, operating from 50 MHz to 1000 MHz. It has a max input power of 20 dBm and VSWR of 1.22, suitable for applications requiring high-frequency amplification in RF & microwave systems.
HMC1040LP3CE by Analog Devices

HMC1040LP3CE

Analog Devices

HMC1040LP3CE by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 24 to 43.5 GHz, with a max input power of 5 dBm and a supply current of 85 mA. This PHEMT technology component is ideal for RF and microwave applications requiring high performance in a compact package.
HMC391LP4E by Hittite Microwave

HMC391LP4E

Hittite Microwave

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 4450 MHz; JESD-609 Code: e3;
MSA-1105-STRG by Agilent Technologies

MSA-1105-STRG

Agilent Technologies

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 1.7; Construction: COMPONENT; Maximum Operating Frequency: 1000 MHz; Maximum Input Power (CW): 13 dBm; Gain: 10 dB;
MMG3H21NT1 by Freescale Semiconductor

MMG3H21NT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TO-243; Maximum Supply Current: 110 mA;
RFSA2113TR13 by Rf Micro Devices

RFSA2113TR13

Rf Micro Devices

WIDE BAND MEDIUM POWER;
HMC1121LP6GE by Analog Devices

HMC1121LP6GE

Analog Devices

Analog Devices' HMC1121LP6GE is a wide band high power RF amplifier with 25 dB gain and 24 dBm max input power. Operating from 5500 MHz to 8500 MHz, it is ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. With a temperature range of -40°C to 85°C, it offers reliable performance in various environments.
TRF37A75IDSGT by Texas Instruments

TRF37A75IDSGT

Texas Instruments

TRF37A75IDSGT by Texas Instruments is a wide band low power RF amplifier with 12 dB gain and 50 ohm impedance. It operates from 40 MHz to 6 GHz, handling up to 10 dBm CW input power. Ideal for applications requiring surface mount components in RF and microwave systems.
HMC636ST89E by Analog Devices

HMC636ST89E

Analog Devices

Analog Devices' HMC636ST89E is a GAAS technology RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V power supply. Ideal for wideband low-power applications requiring surface mounting in temperatures ranging from -40°C to 85°C.
HMC963LC4TR-R5 by Analog Devices

HMC963LC4TR-R5

Analog Devices

Analog Devices' HMC963LC4TR-R5 is a wide band low power RF amplifier with 16.5 dB gain, operating frequency range of 6-26.5 GHz, and 50 ohm impedance. It features PHEMT technology, ceramic package, and can handle up to 0 dBm input power. Ideal for RF & microwave applications requiring high performance in compact designs.
XL1000-BD-000V by M/a-com Technology Solutions

XL1000-BD-000V

M/a-com Technology Solutions

XL1000-BD-000V by M/a-com Technology Solutions is a GAAS RF amplifier with 12dB gain, operating b/w 20-40 GHz. It has a max input power of 12 dBm and requires a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its compact construction and temperature range of -55 to 85°C.
PHA-13LN+ by Mini-circuits

PHA-13LN+

Mini-circuits

Mini-circuits' PHA-13LN+ is a wideband low power RF amplifier with 20.2 dB gain, suitable for frequencies ranging from 1 MHz to 1000 MHz. It can handle up to 8 dBm CW input power and operates b/w -40°C to 105°C, making it ideal for various RF and microwave applications.
ADL5535ARKZ-R7 by Analog Devices

ADL5535ARKZ-R7

Analog Devices

ADL5535ARKZ-R7 by Analog Devices is a wide band low power RF amplifier with 14.9 dB gain, operating from 20 MHz to 1000 MHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
HMC751LC4TR by Hittite Microwave

HMC751LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Characteristic Impedance: 50 ohm;
MGA-72543-BLKG by Broadcom

MGA-72543-BLKG

Broadcom

Broadcom's MGA-72543-BLKG is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package body, matte tin terminal finish, and operates on a 3V power supply.