Analog Devices - HMC1127-SX

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz; Gain: 12.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 6000 MHz;

HMC342LC4TR by Analog Devices is a wide band low power RF amplifier with 1 function and 24 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V. This ceramic package surface mount device is suitable for RF and microwave applications.

The NXP Semiconductors MMG15241HT1 is a wide band medium power RF amplifier with 14 dB gain, operating from 500 MHz to 2800 MHz. It has a max input power of 23 dBm and requires a 5V power supply, drawing up to 105 mA. This component is designed for surface mount applications in RF and microwave systems.

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 1.7; Construction: COMPONENT; Maximum Operating Frequency: 1000 MHz; Maximum Input Power (CW): 13 dBm; Gain: 10 dB;

TRF37D73IDSGT by Texas Instruments is a wide band low power RF amplifier with 20dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply with a current draw of 65mA. Ideal for applications requiring high frequency amplification in compact designs.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;

ADL5535ARKZ-R7 by Analog Devices is a wide band low power RF amplifier with 14.9 dB gain, operating from 20 MHz to 1000 MHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

Qorvo's CMD283C3 is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 2-6 GHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in compact designs.

BGB741L7ESD-E6327 by Infineon Technologies is a RF & Microwave Amplifier with 3V power supply, 7 terminals, and gold finish. It operates on bipolar technology with a max current of 7.2mA. Ideal for surface mount applications in various electronic devices.

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Gain: 17 dB; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Additional Features: LOW NOISE;

WIDE BAND MEDIUM POWER;

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 2; Maximum Input Power (CW): 13 dBm;

WIDE BAND HIGH POWER; Gain: 15.5 dB; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 25 dBm; Terminal Finish: Matte Tin (Sn);

Broadcom's ABA-52563-TR1G is a wide band low power RF amplifier with 20dB gain, operating from 0 to 3500MHz. It has a max input power of 20dBm and VSWR of 1.4, suitable for surface mount applications in RF & microwave systems. The component features bipolar technology, with a characteristic impedance of 50Ω and matte tin terminal finish.

Qorvo's CMD192C5 is a wide band low power RF amplifier with 17 dB gain and 23 dBm CW input power. Operating from -40 to 85°C, it covers 0-20000 MHz range. Ideal for RF & microwave applications requiring high performance in compact designs.

Qorvo's QPA2612TR7 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 4, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals and surface-mounting feature in a plastic/epoxy package body.

AMMP-6220-TR2 by Broadcom is a wide band low power RF amplifier with 22 dB gain. It operates from 6 GHz to 20 GHz, with max input power of 15 dBm and characteristic impedance of 50 ohm. Ideal for applications requiring surface mount construction in RF & microwave systems.