Analog Devices - HMC466LP4

  1. Home
  2. Analog Devices - HMC466LP4
HMC466LP4 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC466LP4
Description NARROW BAND LOW POWER; JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 2; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet HMC466LP4 Datasheet
In Stock589
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: COMPONENT
Minimum Operating Frequency: 6100 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 6720 MHz
RF or Microwave Device Type: NARROW BAND LOW POWER
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
589 - -

Popular Products

Category Top Products

HMC441LP3ETR by Analog Devices

HMC441LP3ETR

Analog Devices

Analog Devices' HMC441LP3ETR is a GAAS RF amplifier with 10dB gain, operating from 6.5 to 13.5GHz, handling up to 15dBm CW input power. With a compact surface-mount package and low power consumption of 115mA at 5V, it's ideal for wideband applications in RF and microwave systems.
QPA2612 by Qorvo

QPA2612

Qorvo

Qorvo's QPA2612 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power, VSWR of 4, and is ideal for wideband high-power applications in surface-mount configurations.
ABA-54563-BLKG by Broadcom

ABA-54563-BLKG

Broadcom

Broadcom's ABA-54563-BLKG is a wide band low power RF amplifier with 21 dB gain, operating from 0 to 3400 MHz. It has a max input power of 20 dBm and VSWR of 1.2, suitable for surface mount applications in RF & microwave systems. The component features a characteristic impedance of 50 ohms and operates at 5V with a max supply current of 90 mA.
MGA-62563-TR2G by Broadcom

MGA-62563-TR2G

Broadcom

Broadcom's MGA-62563-TR2G is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3000 MHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3/5V supplies.
TQP369184 by Triquint Semiconductor

TQP369184

Triquint Semiconductor

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 24 dBm; Minimum Operating Frequency: 0 MHz; Construction: COMPONENT; Gain: 19 dB;
MSA-1105-STR by Agilent Technologies

MSA-1105-STR

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 50 MHz;
ERA-50SM by Mini-circuits

ERA-50SM

Mini-circuits

ERA-50SM by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, suitable for RF & microwave applications requiring surface mount construction.
TGA2567-SM by Qorvo

TGA2567-SM

Qorvo

The Qorvo TGA2567-SM is a wide band medium power RF amplifier with 17 dB gain, operating from 2-20 GHz. It can handle up to 22 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.
HMC871LC5 by Hittite Microwave

HMC871LC5

Hittite Microwave

WIDE BAND LOW POWER; Maximum Input Power (CW): 10 dBm; Construction: COMPONENT; JESD-609 Code: e4; Gain: 10 dB; Maximum Operating Frequency: 20000 MHz;
QPA2735TR7X by Qorvo

QPA2735TR7X

Qorvo

Qorvo's QPA2735TR7X is a GAAS RF amplifier with 26dB gain, operating from 13.75-18 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, ideal for wideband low-power applications in RF & microwave systems. The component features surface mounting and a plastic/epoxy package body material.
6003 by Teledyne Technologies

6003

Teledyne Technologies

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 7;
BGA2815,115 by NXP Semiconductors

BGA2815,115

NXP Semiconductors

NXP Semiconductors' BGA2815,115 is a RF & Microwave Amplifier with 3.3V power supply, 6 terminals, and 21.1mA max supply current. It comes in a plastic/epoxy package and features tin terminal finish for surface mount applications.
HMC794LP3ETR by Hittite Microwave

HMC794LP3ETR

Hittite Microwave

WIDE BAND LOW POWER;
TGA4521 by Triquint Semiconductor

TGA4521

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Technology: GAAS; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 6; JESD-609 Code: e3/e4;
HMC636ST89TR by Hittite Microwave

HMC636ST89TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TO-243;
CMD192C5 by Qorvo

CMD192C5

Qorvo

Qorvo's CMD192C5 is a wide band low power RF amplifier with 17 dB gain and 23 dBm CW input power. Operating from -40 to 85°C, it covers 0-20000 MHz range. Ideal for RF & microwave applications requiring high performance in compact designs.
MAAP-010169-000000 by M/a-com Technology Solutions

MAAP-010169-000000

M/a-com Technology Solutions

WIDE BAND HIGH POWER;
SGA6286Z by Qorvo

SGA6286Z

Qorvo

SGA6286Z by Qorvo is a wide band low power RF amplifier with 12.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, handling up to 18 dBm CW input power. This component is ideal for surface mount applications in RF and microwave systems.
GALI-39+ by Mini-circuits

GALI-39+

Mini-circuits

GALI-39+ by Mini-circuits is a wide band low power RF amplifier with 17.7 dB gain and 50 ohm impedance. It operates from 0 to 7000 MHz, handles up to 13 dBm input power, and has a VSWR of 2.3. Ideal for RF & microwave applications requiring compact surface mount components.
HMC635LC4TR by Analog Devices

HMC635LC4TR

Analog Devices

Analog Devices' HMC635LC4TR is a wide band low power RF amplifier with 24 terminals, operating at temperatures from -55 to 70°C. Utilizing GaAs technology, it requires a 5V power supply and features a ceramic package for surface mount applications in RF & microwave systems.