Analog Devices - HMC816LP4E

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;

MAX2244EBL-T by Maxim Integrated is a RF amplifier with 10 dBm CW input power, 6 VSWR, and 3V supply. It operates b/w -40 to 85°C, ideal for narrow band low power applications in the frequency range of 2400-2500 MHz. The component has a surface mount package with 9 terminals and requires a max current of 205 mA.

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 1.2; Minimum Operating Frequency: 100 MHz;

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 1000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC8410LP2FE is a wide band low power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 10 MHz to 10 GHz, handling up to 20 dBm CW input power. Ideal for RF applications requiring high performance in temperature range of -40°C to 85°C.

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: MATTE TIN;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -54 Cel; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER;

AFD4-020040-20P by L-3 Narda-miteq is a COAXIAL RF amplifier with 32 dB gain, VSWR of 2, operating from 2-4 GHz. Ideal for wideband medium power applications in RF & microwave systems.

Analog Devices' HMC517LC4 is a wide band low power RF amplifier with 15 dB gain, operating from 17-26 GHz. It has a max input power of 2 dBm and operates on a 3V supply. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 4000 MHz;

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

Mini-circuits' ZX60-P103LN+ is a COAXIAL RF amplifier with 4.5 dB Gain, 50-3000 MHz frequency range, and 21 dBm CW power input. Ideal for wideband low-power applications, it offers a VSWR of 1.8 and operates b/w -40°C to 85°C temperature range.

The NXP Semiconductors MW7IC2750NBR1 is a narrow band high power RF amplifier with a gain of 24 dB. It operates within the frequency range of 2500-2700 MHz and can handle a max input power of 30 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 3;

HMC1040LP3CE by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 24 to 43.5 GHz, with a max input power of 5 dBm and a supply current of 85 mA. This PHEMT technology component is ideal for RF and microwave applications requiring high performance in a compact package.

AMMP-6220-TR2 by Broadcom is a wide band low power RF amplifier with 22 dB gain. It operates from 6 GHz to 20 GHz, with max input power of 15 dBm and characteristic impedance of 50 ohm. Ideal for applications requiring surface mount construction in RF & microwave systems.

Broadcom's MGA-72543-TR2G is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems.

Qorvo's QPA1019D is a GAN technology RF amplifier with 34.4 dB gain, 25 dBm CW input power, and 4 VSWR. Ideal for wideband high-power applications from 4500 MHz to 7000 MHz, it operates at temperatures ranging from -40°C to 85°C.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Technology: GAN; Maximum Supply Current: 400 mA; Maximum Voltage Standing Wave Ratio: 10;