Analog Devices - HMC817LP4E

  1. Home
  2. Analog Devices - HMC817LP4E
HMC817LP4E by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC817LP4E
Description NARROW BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1200 MHz; Minimum Operating Frequency: 550 MHz;
Datasheet HMC817LP4E Datasheet
In Stock227
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): 10 dBm
Minimum Operating Frequency: 550 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 1200 MHz
RF or Microwave Device Type: NARROW BAND LOW POWER
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Gain: 11.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
227 - -

Popular Products

Category Top Products

HMC475ST89ETR by Analog Devices

HMC475ST89ETR

Analog Devices

HMC475ST89ETR by Analog Devices is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 4500 MHz, handling up to 17 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount construction in temperatures ranging from -40°C to 85°C.
HMC659LC5 by Hittite Microwave

HMC659LC5

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;
HMC451LC3 by Hittite Microwave

HMC451LC3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
HMC505LP4 by Hittite Microwave

HMC505LP4

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e0;
MAX2643EXT+T by Maxim Integrated

MAX2643EXT+T

Maxim Integrated

WIDE BAND LOW POWER; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 800 MHz; JESD-609 Code: e4; Characteristic Impedance: 50 ohm; Gain: 14.5 dB;
HMC794LP3ETR by Hittite Microwave

HMC794LP3ETR

Hittite Microwave

WIDE BAND LOW POWER;
RF5110G by Qorvo

RF5110G

Qorvo

Qorvo's RF5110G is a GAAS technology narrow band high power amplifier with 32 dB gain. It operates b/w 880-915 MHz, handles up to 13 dBm CW input power, and has a VSWR of 10. Suitable for RF applications requiring high power amplification in the frequency range.
SBB5089ZSR by Rf Micro Devices

SBB5089ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC-ALH140 by Analog Devices

HMC-ALH140

Analog Devices

Analog Devices' HMC-ALH140 is a GAAS wide band low power RF amplifier with 10 dB gain, operating from 24-40 GHz. It has a max input power of 6 dBm, operates on 4V supply, and draws up to 100 mA current. Ideal for RF & microwave applications requiring high frequency amplification in extreme temperature conditions.
BGU6102,147 by NXP Semiconductors

BGU6102,147

NXP Semiconductors

NXP Semiconductors' BGU6102,147 is a wide band low power RF amplifier with 6 terminals and operates on 3V supply. With a max operating temperature of 85°C, it is ideal for surface mount applications in RF and microwave systems.
HMC1053 by Hittite Microwave

HMC1053

Hittite Microwave

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;
TQP3M9008 by Triquint Semiconductor

TQP3M9008

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Construction: COMPONENT;
ADPA7006AEHZ by Analog Devices

ADPA7006AEHZ

Analog Devices

ADPA7006AEHZ by Analog Devices is a RF & Microwave Amplifier with 20 dB gain, operating frequency range of 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for wide band medium power applications requiring high performance in surface mount configurations.
HMC751LC4TR by Analog Devices

HMC751LC4TR

Analog Devices

HMC751LC4TR by Analog Devices is a wide band low power RF amplifier with 22 dB gain. It operates from 17-27 GHz, ideal for microwave applications. Featuring a ceramic package, it has a max input power of -5 dBm and requires 4V supply voltage.
ADL5545ARKZ-R7 by Analog Devices

ADL5545ARKZ-R7

Analog Devices

ADL5545ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with 24.8 dB gain and 50 ohm impedance. It operates from 30 MHz to 6 GHz, with a max input power of 18 dBm. This component is ideal for RF and microwave applications requiring high performance in a compact surface mount package.
MGA-72543-TR1 by Broadcom

MGA-72543-TR1

Broadcom

Broadcom's MGA-72543-TR1 is a GAAS technology RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF & microwave systems. The component features a plastic/epoxy package body, operates at temperatures from -40°C to 85°C, and requires a 3V power supply.
MW7IC2040NR1 by Freescale Semiconductor

MW7IC2040NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 1805 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; Terminal Finish: Matte Tin (Sn);
QPA9419 by Qorvo

QPA9419

Qorvo

RF/Microwave Amplifiers;
HMC606LC5 by Hittite Microwave

HMC606LC5

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
TGA2567-SM by Qorvo

TGA2567-SM

Qorvo

The Qorvo TGA2567-SM is a wide band medium power RF amplifier with 17 dB gain, operating from 2-20 GHz. It can handle up to 22 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.