Analog Devices - HMC8410LP2FETR

Analog Devices' HMC8205BF10 is a wideband high-power RF amplifier with 25 dB gain and 35 dBm CW input power. Operating from 300 MHz to 6 GHz, it features a characteristic impedance of 50 ohms. Ideal for applications requiring high-power amplification in RF and microwave systems.

AD8350ARZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER;

Broadcom's MGA-72543-TR2G is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems.

AMMP-6220-TR1 by Broadcom is a wide band low power RF amplifier with 22 dB gain, operating frequency range of 6-20 GHz. It features a max input power of 15 dBm and requires a 3V power supply. Ideal for applications requiring high-frequency amplification in RF and microwave systems.

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 3300 MHz; Gain: 28 dB; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 10 dBm;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;

Analog Devices' HMC478MP86 is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. Ideal for RF applications requiring surface mount components in the -40°C to +85°C temperature range.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Gain: 13 dB; Characteristic Impedance: 50 ohm;

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

Analog Devices' HMC478SC70ETR is a wide band low power RF amplifier with 5V supply, 82mA max current, and -40 to 85°C operating range. Its bipolar technology and surface mount package make it ideal for RF & microwave applications requiring high performance in compact designs.

ADL8121ACPZN by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications in the RF & microwave field, it operates from -40°C to 85°C with a frequency range of 25MHz to 12GHz.

Qorvo's TQP7M9103 is a wide band medium power RF amplifier with 16.6 dB gain, operating from 400 MHz to 4000 MHz. It has a max input power of 30 dBm and VSWR of 10, suitable for surface mount applications in RF & microwave systems. With a compact plastic/epoxy package, it operates b/w -40°C to 85°C temperature range.

QPL6207QTR7 by Qorvo is a RF & Microwave Amplifier with 18.1 dB Gain, 2.2 VSWR, and 30 dBm Max Input Power. It operates in the frequency range of 2320-2345 MHz, suitable for narrowband low-power applications in automotive electronics due to AEC-Q100 screening level compliance.

Analog Devices' HMC8325-SX is a PHEMT RF amplifier with 22 terminals, operating from 71-86 GHz. It offers a gain of 19.5 dB and requires a 3V power supply, drawing a max current of 50 mA. Ideal for wideband low-power applications in RF and microwave systems.

Analog Devices' HMC963LC4TR-R5 is a wide band low power RF amplifier with 16.5 dB gain, operating frequency range of 6-26.5 GHz, and 50 ohm impedance. It features PHEMT technology, ceramic package, and can handle up to 0 dBm input power. Ideal for RF & microwave applications requiring high performance in compact designs.

HMC1087F10 by Analog Devices is a GAN technology RF amplifier with 11dB gain, operating from 2-20GHz. It has a max input power of 34dBm and VSWR of 6, suitable for wideband high-power applications in RF & microwave systems. The ceramic package, surface mountable device operates b/w -40 to +85°C with a 28V supply.

Analog Devices' MAX2659ELT+T is a BICMOS RF amplifier with 1.8/3V supplies, 6 terminals, and 5.6mA max supply current. It operates b/w -40°C to 85°C, features gold nickel terminal finish, and is ideal for surface mount applications in RF & microwave circuits.

Infineon's BGA420H6327XTSA1 is a wide band low power RF amplifier with 11dB gain, suitable for frequencies ranging from 100MHz to 1800MHz. With a max input power of 0dBm, it operates in temperatures from -65°C to 150°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;