Analog Devices - HMC8411LP2FETR

  1. Home
  2. Analog Devices - HMC8411LP2FETR
HMC8411LP2FETR by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC8411LP2FETR
Description WIDE BAND LOW POWER; Gain: 11 dB; Maximum Operating Frequency: 10000 MHz; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Construction: COMPONENT;
Datasheet HMC8411LP2FETR Datasheet
In Stock138
NAME DESCRIPTION
Other Names: -2735-HMC8411LP2FETRCT
505-HMC8411LP2FEDKR
505-HMC8411LP2FETR
505-HMC8411LP2FECT
-2735-HMC8411LP2FETRDKR
HMC8411LP2FETR-ND
Construction: COMPONENT
Maximum Input Power (CW): 20 dBm
Minimum Operating Frequency: 10 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 10000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Terminal Finish: NICKEL PALLADIUM GOLD
JESD-609 Code: e4
Minimum Operating Temperature: -40 Cel
Gain: 11 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
138 - -

Popular Products

Category Top Products

SBB5089ZSR by Qorvo

SBB5089ZSR

Qorvo

Qorvo's SBB5089ZSR is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mounting with a characteristic impedance of 50 ohms.
ADL5544ARKZ-R7 by Analog Devices

ADL5544ARKZ-R7

Analog Devices

ADL5544ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 30 MHz to 6 GHz. It has a max input power of 18 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is constructed using bipolar technology in a plastic/epoxy package for surface mounting.
NBB-400-D by Qorvo

NBB-400-D

Qorvo

Qorvo's NBB-400-D is a wide band low power RF amplifier with 15.5 dB gain, suitable for frequencies ranging from 0 to 8000 MHz. It can handle up to 20 dBm CW input power and has a VSWR of 1.9, making it ideal for various RF and microwave applications. Operating temperatures range from -45°C to 85°C, with a characteristic impedance of 50 ohms.
A33 by TE Connectivity

A33

TE Connectivity

TE Connectivity's A33 RF & Microwave Amplifier features 15V power supply, 4 terminals, and 16mA max supply current. With a metal package body, it operates b/w 0-50°C. Ideal for applications requiring reliable amplification in various temperature conditions.
HMC960LP4E by Analog Devices

HMC960LP4E

Analog Devices

Analog Devices' HMC960LP4E is a wide band high power RF amplifier with 0 dB gain, operating from 0 to 100 MHz. It features a surface mount package with 24 terminals and operates b/w -40°C to +85°C. Ideal for applications requiring high power amplification in RF and microwave systems.
MGA-631P8-BLKG by Broadcom

MGA-631P8-BLKG

Broadcom

Broadcom's MGA-631P8-BLKG is a GAAS RF amplifier with 16dB gain, operating from 400MHz to 1500MHz. It has a max input power of 20dBm and uses a 4V power supply. Ideal for wideband low-power applications, this component features surface mounting and a characteristic impedance of 50Ω.
BGA2003T/R by NXP Semiconductors

BGA2003T/R

NXP Semiconductors

NXP Semiconductors' BGA2003T/R is a wide band low power RF amplifier with 16 dB gain, operating from 900 MHz to 1800 MHz. Ideal for RF applications requiring a 50 ohm impedance, this component offers high performance in amplifying signals within the specified frequency range.
MAX2232EEE by Maxim Integrated

MAX2232EEE

Maxim Integrated

MAX2232EEE by Maxim Integrated is a RF amplifier with 23.9 dB gain, operating frequency range of 800-1000 MHz, and VSWR of 1.5. It is ideal for narrowband medium power applications requiring a max input power of 10 dBm in plastic/epoxy package suitable for surface mounting.
HMC1082LP4E by Hittite Microwave

HMC1082LP4E

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;
PMA3-83LN+ by Mini-circuits

PMA3-83LN+

Mini-circuits

The Mini-circuits PMA3-83LN+ is a wide band low power RF amplifier with a gain of 19.9 dB, suitable for frequencies ranging from 500 MHz to 8000 MHz. It can handle a max input power of 16 dBm and operates in temperatures from -40°C to 105°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
MGA-81563-BLKG by Agilent Technologies

MGA-81563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
VMMK-2503-TR1G by Broadcom

VMMK-2503-TR1G

Broadcom

VMMK-2503-TR1G by Broadcom is a GAAS technology RF amplifier with 12.5 dB gain, operating from 1000 to 12000 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.
SGA-3463Z by Sirenza Microdevices

SGA-3463Z

Sirenza Microdevices

SGA-3463Z by Sirenza Microdevices is a wide band low power RF amplifier with 20 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.
CMPA0060002F by Wolfspeed

CMPA0060002F

Wolfspeed

Wolfspeed's CMPA0060002F is a wide band high power RF module with 13.5 dB gain, operating from 20 MHz to 6 GHz. It has a VSWR of 5 and operates b/w -40°C to 150°C. Ideal for RF & microwave applications requiring high power amplification in a compact form factor.
HMC960LP4ETR by Hittite Microwave

HMC960LP4ETR

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Additional Features: LOW NOISE;
BGA2870,115 by NXP Semiconductors

BGA2870,115

NXP Semiconductors

NXP Semiconductors' BGA2870,115 is a RF & Microwave Amplifier with 2.5V power supply, 6 terminals, and 18.5mA max supply current. It features a plastic/epoxy package body material and tin terminal finish, suitable for surface mount applications in various electronic devices.
TQP3M9019 by Qorvo

TQP3M9019

Qorvo

TQP3M9019 by Qorvo is a wide band medium power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 50 MHz to 4000 MHz and can handle a max input power of 23 dBm. This component, with its surface mount package, is commonly used in RF and microwave applications.
HMC478MP86 by Analog Devices

HMC478MP86

Analog Devices

Analog Devices' HMC478MP86 is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. Ideal for RF applications requiring surface mount components in the -40°C to +85°C temperature range.
MGA-81563-TR1G by Broadcom

MGA-81563-TR1G

Broadcom

Broadcom's MGA-81563-TR1G is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C.
XP1044-QL-0N00 by Mimix Broadband

XP1044-QL-0N00

Mimix Broadband

NARROW BAND MEDIUM POWER; Gain: 16.5 dB; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);