Analog Devices - HMC8412TCPZ-EP-R7

  1. Home
  2. Analog Devices - HMC8412TCPZ-EP-R7
HMC8412TCPZ-EP-R7 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC8412TCPZ-EP-R7
Description WIDE BAND LOW POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
Datasheet HMC8412TCPZ-EP-R7 Datasheet
In Stock605
NAME DESCRIPTION
RF or Microwave Device Type: WIDE BAND LOW POWER
Terminal Finish: NICKEL PALLADIUM GOLD
JESD-609 Code: e4
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
605 $83.880 $50,747.400

Popular Products

Category Top Products

MAAP-010168-000000 by M/a-com Technology Solutions

MAAP-010168-000000

M/a-com Technology Solutions

MAAP-010168-000000 by M/a-com Technology Solutions is a wide band high power RF module with 19 dB gain, operating from 500 MHz to 3000 MHz. It can handle up to 24 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & Microwave applications requiring high power amplification.
HMC8411LP2FETR by Analog Devices

HMC8411LP2FETR

Analog Devices

Analog Devices' HMC8411LP2FETR is a wide band low power RF amplifier with 11 dB gain and 20 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.
HMC636ST89TR by Analog Devices

HMC636ST89TR

Analog Devices

Analog Devices' HMC636ST89TR is a GaAs RF amplifier with 5V power supply, operating from -40 to 85°C. It features wideband low power design in a surface-mount package, ideal for RF and microwave applications requiring high performance in compact setups.
RF5110GTR7 by Qorvo

RF5110GTR7

Qorvo

Qorvo's RF5110GTR7 is a wide band medium power amplifier with 33 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 13 dBm and VSWR of 10, suitable for RF & microwave applications. With a construction of hybrid technology and surface mounting feature, it operates at temperatures ranging from -40°C to 85°C.
RFPA3800TR7 by Qorvo

RFPA3800TR7

Qorvo

The Qorvo RFPA3800TR7 is a GAAS wide band high power amplifier with 12 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 28 dBm and VSWR of 5, suitable for RF & microwave applications requiring up to 700 mA at 7V supply voltage.
RF6886TR7 by Qorvo

RF6886TR7

Qorvo

Qorvo's RF6886TR7 is a wide band high power amplifier with 31dB gain, operating from 433MHz to 470MHz. It has a max input power of 12dBm and VSWR of 5, suitable for RF applications requiring high power amplification in the frequency range. The component is designed for surface mount installation in various electronic systems.
ZHL-1-2W by Mini-circuits

ZHL-1-2W

Mini-circuits

ZHL-1-2W by Mini-circuits is a COAXIAL RF amplifier with 29 dB Gain, 10 dBm CW input power, and VSWR of 2. Ideal for wideband high-power applications from 5 MHz to 500 MHz. Operating temperature range: -20°C to +65°C.
MMZ09332BT1 by NXP Semiconductors

MMZ09332BT1

NXP Semiconductors

NXP Semiconductors' MMZ09332BT1 is a narrow band medium power RF amplifier with 28.7 dB gain and 29 dBm max input power. Operating from 130 MHz to 1000 MHz, it's ideal for applications requiring high-frequency amplification in RF and microwave systems.
MGA-72543-TR1 by Agilent Technologies

MGA-72543-TR1

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 20 dBm;
CMD283C3 by Qorvo

CMD283C3

Qorvo

Qorvo's CMD283C3 is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 2-6 GHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in compact designs.
TGA2701-SM by Qorvo

TGA2701-SM

Qorvo

TGA2701-SM by Qorvo is a wide band high power RF amplifier with 18 dB gain. It operates from 5900 MHz to 8500 MHz, handling up to 29 dBm CW input power. Ideal for applications requiring high power amplification in RF and microwave systems.
HMC902LP3E by Hittite Microwave

HMC902LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
MAR-8ASM+ by Mini-circuits

MAR-8ASM+

Mini-circuits

MAR-8ASM+ by Mini-circuits is a wide band low power RF amplifier with 20 dB gain. It operates from 0 to 1000 MHz, handling up to 13 dBm CW input power. Ideal for RF & microwave applications, it features a compact surface mount package and operates in temperatures ranging from -40°C to 85°C.
MW7IC2220NR1 by Freescale Semiconductor

MW7IC2220NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm;
HMC797LP5ETR by Analog Devices

HMC797LP5ETR

Analog Devices

Analog Devices' HMC797LP5ETR is a GAAS technology RF amplifier with 32 terminals, operating b/w -55°C to 85°C. It has a power supply of 10V and max current of 440mA. Ideal for wide band medium power applications, it features a surface mount package body made of plastic/epoxy.
HMC1082LP4E by Analog Devices

HMC1082LP4E

Analog Devices

HMC1082LP4E by Analog Devices is a wide band medium power RF amplifier with 20 dB gain. It operates from 5V supply, covering frequencies from 5500 MHz to 18000 MHz. This component, housed in a plastic/epoxy package, is ideal for RF and microwave applications requiring high performance amplification.
RA07N4047M-101 by Mitsubishi Electric

RA07N4047M-101

Mitsubishi Electric

RA07N4047M-101 by Mitsubishi Electric is a RF amplifier module with max input power of 14.77 dBm and VSWR of 4. It operates in the frequency range of 400-470 MHz, ideal for narrowband high-power applications. With a temperature range from -30 to 90°C, it is suitable for various RF and microwave systems.
ADL9006ACGZN by Analog Devices

ADL9006ACGZN

Analog Devices

RF/Microwave Amplifiers;
HMC565LC5 by Analog Devices

HMC565LC5

Analog Devices

Analog Devices' HMC565LC5 is a wide band low power RF amplifier with 16 dB gain and 50 ohm impedance. Operating from 6-20 GHz, it handles up to 10 dBm CW input power. Ideal for applications requiring high frequency amplification in compact designs.
MMG3014NT1 by NXP Semiconductors

MMG3014NT1

NXP Semiconductors

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.