Analog Devices - HMC996LP4ETR

  1. Home
  2. Analog Devices - HMC996LP4ETR
HMC996LP4ETR by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC996LP4ETR
Description WIDE BAND LOW POWER; JESD-609 Code: e3; Construction: COMPONENT; Maximum Operating Frequency: 12000 MHz; Maximum Input Power (CW): 20 dBm; Characteristic Impedance: 50 ohm;
Datasheet HMC996LP4ETR Datasheet
In Stock727
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): 20 dBm
Minimum Operating Frequency: 5000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 12000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Gain: 13 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
727 $20.120 $14,627.240

Popular Products

Category Top Products

1214-800P by Microsemi

1214-800P

Microsemi

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: MODULE(UNSPEC); Power Supplies (V): 50;
HMC451LC3 by Hittite Microwave

HMC451LC3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
MAX2640AUT+T by Analog Devices

MAX2640AUT+T

Analog Devices

MAX2640AUT+T by Analog Devices is a wide band low power RF amplifier with 12.8 dB gain, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm, operates on 3/5 V supplies, and draws a max current of 7.8 mA. This component is ideal for RF and microwave applications requiring surface mounting in temperatures ranging from -40°C to 125°C.
HMC636ST89 by Hittite Microwave

HMC636ST89

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
TQP7M9105 by Qorvo

TQP7M9105

Qorvo

Qorvo's TQP7M9105 RF amplifier offers 19.4 dB gain with a wide band of 50-1500 MHz, handling up to 30 dBm CW input power. Ideal for applications requiring high-performance RF amplification in environments ranging from -40°C to 85°C.
ECG008B-G by Triquint Semiconductor

ECG008B-G

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 7.2;
HMC902LP3E by Hittite Microwave

HMC902LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
HMC441LC3BTR by Hittite Microwave

HMC441LC3BTR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: LCC12,.12SQ,20;
HMC565LC5TR by Hittite Microwave

HMC565LC5TR

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 0 dBm; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 20000 MHz;
TGA2227-SMTR7 by Qorvo

TGA2227-SMTR7

Qorvo

WIDE BAND MEDIUM POWER;
GALI-39+ by Mini-circuits

GALI-39+

Mini-circuits

GALI-39+ by Mini-circuits is a wide band low power RF amplifier with 17.7 dB gain and 50 ohm impedance. It operates from 0 to 7000 MHz, handles up to 13 dBm input power, and has a VSWR of 2.3. Ideal for RF & microwave applications requiring compact surface mount components.
HMC797APM5E by Analog Devices

HMC797APM5E

Analog Devices

HMC797APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. With a VSWR of 7, it operates from 0 to 22000 MHz, making it ideal for high-frequency applications in RF and microwave systems. The component has a temperature range of -40 to 85°C and features nickel palladium gold terminal finish.
CMPA901A035F by Wolfspeed

CMPA901A035F

Wolfspeed

WIDE BAND HIGH POWER;
6003 by Teledyne Technologies

6003

Teledyne Technologies

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 7;
HMC1040CHIPS-SX by Analog Devices

HMC1040CHIPS-SX

Analog Devices

HMC1040CHIPS-SX by Analog Devices is a wide band low power RF amplifier with a gain of 19 dB. It operates in a frequency range of 20-44 GHz and can handle max input power of 5 dBm. This component is suitable for applications requiring RF amplification in the microwave frequency range.
LEE-39+ by Mini-circuits

LEE-39+

Mini-circuits

The Mini-circuits LEE-39+ is a wide band low power RF amplifier with 18.5 dB gain, operating from 0 to 8000 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for surface mount applications in RF & microwave systems.
TGA4803 by Qorvo

TGA4803

Qorvo

Qorvo's TGA4803 is a wide band medium power RF amplifier with 8 dB gain and 18 dBm CW input power. Operating from 0-50000 MHz, it is ideal for various RF applications requiring high performance amplification in components.
RF6886TR7 by Rf Micro Devices

RF6886TR7

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 470 MHz;
MBC13916NT1 by NXP Semiconductors

MBC13916NT1

NXP Semiconductors

NXP Semiconductors' MBC13916NT1 is a BICMOS wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 100 MHz to 2500 MHz, handling up to 10 dBm input power. Ideal for applications requiring compact, high-performance RF amplification in plastic/epoxy packages.
HMC635LC4TR by Hittite Microwave

HMC635LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 70 Cel;