LT3505EDD by Analog Devices | Other Function Semiconductors

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Manufacturer	Analog Devices
Manufacturer's Part Number	LT3505EDD
Description	SWITCHING REGULATOR; Temperature Grade: OTHER; No. of Terminals: 8; Package Code: HVSON; Package Shape: SQUARE; Surface Mount: YES;
Datasheet	LT3505EDD Datasheet
In Stock	1,439

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Control Mode:	CURRENT-MODE
Width (mm):	3 mm
Maximum Seated Height:	.8 mm
Maximum Output Current:	2.2 A
Surface Mount:	YES
Terminal Finish:	TIN LEAD
Switcher Config:	BUCK
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
JESD-30 Code:	S-PDSO-N8
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Maximum Operating Temperature:	85 Cel
Package Code:	HVSON
Control Technique:	PULSE WIDTH MODULATION
Moisture Sensitivity Level (MSL):	1
Maximum Switching Frequency:	3300 kHz
Minimum Input Voltage:	3.6 V
Maximum Input Voltage:	36 V
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
No. of Functions:	1
Qualification:	Not Qualified
Nominal Input Voltage:	12 V
Other IC type:	SWITCHING REGULATOR
Length:	3 mm
Terminal Pitch:	.5 mm
Temperature Grade:	OTHER

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,439	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;

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RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;

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MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.

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FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.