Analog Devices - LT5524EFE#TR

  1. Home
  2. Analog Devices - LT5524EFE#TR
LT5524EFE#TR by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number LT5524EFE#TR
Description WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Terminal Finish: Tin/Lead (Sn/Pb); Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 540 MHz; JESD-609 Code: e0;
Datasheet LT5524EFE#TR Datasheet
In Stock1,195
NAME DESCRIPTION
Construction: COMPONENT
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 540 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -40 Cel
Gain: 4.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,195 - -

Popular Products

Category Top Products

BGU7007,115 by NXP Semiconductors

BGU7007,115

NXP Semiconductors

NXP Semiconductors' BGU7007,115 is a RF & Microwave Amplifier with 6 terminals and operates b/w -40 to 85°C. It has a power supply of 1.8V, max current of 15.9mA, and surface mount feature. Ideal for applications requiring amplification in temperature-sensitive environments.
HMC506LP4ETR by Analog Devices

HMC506LP4ETR

Analog Devices

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
MGA-30889-BLKG by Broadcom

MGA-30889-BLKG

Broadcom

Broadcom's MGA-30889-BLKG is a GAAS RF amplifier with 14.6 dB gain, operating from 40 MHz to 2600 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component features surface mounting and matte tin terminals, with a characteristic impedance of 50 ohms.
SKY65981-11 by Skyworks Solutions

SKY65981-11

Skyworks Solutions

NARROW BAND LOW POWER;
TQP3M9008 by Qorvo

TQP3M9008

Qorvo

TQP3M9008 by Qorvo is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. Ideal for RF applications requiring high performance in plastic/epoxy package.
ALM-32220-BLKG by Broadcom

ALM-32220-BLKG

Broadcom

ALM-32220-BLKG by Broadcom is a GAAS module with 13.5 dB gain, operating from 1700 to 2700 MHz. With a max input power of 28 dBm, it's ideal for wideband high-power RF applications requiring a 50 ohm impedance and 5V supply voltage.
ADPA7007AEHZ-R7 by Analog Devices

ADPA7007AEHZ-R7

Analog Devices

ADPA7007AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 20-44 GHz. It features a max input power of 27 dBm and VSWR of 1.29, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.
TQP7M9103 by Triquint Semiconductor

TQP7M9103

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 10;
MGA-61563-TR1G by Agilent Technologies

MGA-61563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 6000 MHz;
TGF2023-20 by Triquint Semiconductor

TGF2023-20

Triquint Semiconductor

WIDE BAND HIGH POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3/e4; Terminal Finish: MATTE TIN/GOLD; Minimum Operating Frequency: 0 MHz; Maximum Input Power (CW): 43 dBm;
AG302-86G by Wj Communications

AG302-86G

Wj Communications

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
TRF37A75IDSGT by Texas Instruments

TRF37A75IDSGT

Texas Instruments

TRF37A75IDSGT by Texas Instruments is a wide band low power RF amplifier with 12 dB gain and 50 ohm impedance. It operates from 40 MHz to 6 GHz, handling up to 10 dBm CW input power. Ideal for applications requiring surface mount components in RF and microwave systems.
BGU8009,115 by NXP Semiconductors

BGU8009,115

NXP Semiconductors

NXP Semiconductors' BGU8009,115 is a RF & Microwave Amplifier with 6 terminals and PLASTIC/EPOXY package. It operates b/w -40 to 85 °C with power supplies of 1.8/2.85 V. Ideal for surface mount applications in various electronic devices.
HMC516LC5TR by Analog Devices

HMC516LC5TR

Analog Devices

HMC516LC5TR by Analog Devices is a GAAS wide band low power RF amplifier with 1 function and 32 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V, drawing a max current of 88mA. This surface mount package is suitable for various RF and microwave applications.
HMC451LP3ETR by Hittite Microwave

HMC451LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz; Gain: 12.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm;
6003 by Teledyne Technologies

6003

Teledyne Technologies

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 7;
TGA2238-CP by Qorvo

TGA2238-CP

Qorvo

TGA2238-CP by Qorvo is a GAN technology RF amplifier with 28 dB gain, operating from 8-11 GHz. It has a max input power of 30 dBm and VSWR of 3, suitable for wideband high-power applications. This module operates b/w -40 to 85°C, drawing a max current of 650 mA at -2.6 to 28V supplies.
AM-147-PIN by M/a-com Technology Solutions

AM-147-PIN

M/a-com Technology Solutions

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 2; Gain: 15.5 dB; Construction: COMPONENT;
CMPA2060035F by Wolfspeed

CMPA2060035F

Wolfspeed

WIDE BAND HIGH POWER;
RFSA2113SR by Rf Micro Devices

RFSA2113SR

Rf Micro Devices

WIDE BAND MEDIUM POWER;