Analog Devices - MAT-02NBCG

MAT-02NBCG by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number MAT-02NBCG
Description NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON;
Datasheet MAT-02NBCG Datasheet
In Stock391
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): .02 A
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 400
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 7
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 40 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Additional Features: LOW NOISE
Maximum Operating Temperature: 150 Cel
Maximum VCEsat: .2 V
Maximum Power Dissipation Ambient: 1.8 W
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
391 - -

Popular Products

Category Top Products