Analog Devices - MAT02BIFH

  1. Home
  2. Analog Devices - MAT02BIFH
MAT02BIFH by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number MAT02BIFH
Description NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; Case Connection: SUBSTRATE;
Datasheet MAT02BIFH Datasheet
In Stock573
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: METAL
Maximum Collector Current (IC): .02 A
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 6
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W6
No. of Elements: 2
Package Shape: ROUND
Terminal Form: WIRE
Maximum Operating Temperature: 150 Cel
Case Connection: SUBSTRATE
Maximum Power Dissipation Ambient: 1.8 W
JEDEC-95 Code: TO-78
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 400
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 40 V
Additional Features: LOW NOISE
Maximum VCEsat: .2 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
573 - -

Popular Products

Category Top Products

2N2907A by Itt Semiconductor

2N2907A

Itt Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N2222A by Solid State Devices

2N2222A

Solid State Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2222AUA by Tt Electronics Plc

2N2222AUA

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Maximum Turn Off Time (toff): 300 ns; Transistor Element Material: SILICON;
2N3906 by Forward International Electronics

2N3906

Forward International Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
BC846B-7-F by Diodes Incorporated

BC846B-7-F

Diodes Incorporated

Diodes Inc. BC846B-7-F is a NPN BJT transistor with hFE of 200, VCE of 65V, and IC of 0.1A. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates b/w -65 to 150°C, meeting AEC-Q101 standards for automotive use.
2N2907A by Diotec Semiconductor Ag

2N2907A

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; JESD-609 Code: e3;
BC817-25,215 by Nexperia

BC817-25,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDSO-G3;
2N2222A by Dionics-usa

2N2222A

Dionics-usa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847B by Itt Semiconductor

BC847B

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2905A by Baneasa S A

2N2905A

Baneasa S A

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Terminal Form: WIRE; Qualification: Not Qualified; Transistor Element Material: SILICON;
JANTX2N2222AUB by Micropac Industries

JANTX2N2222AUB

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Transistor Application: SWITCHING;
BC547ATA by Fairchild Semiconductor

BC547ATA

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT3906 by Vishay Semiconductors

MMBT3906

Vishay Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
2N2905A by General Diode

2N2905A

General Diode

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
ULN2803A by Vishay Intertechnology

ULN2803A

Vishay Intertechnology

NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
2N2907A by International Devices

2N2907A

International Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N2907AUB by Microchip Technology

2N2907AUB

Microchip Technology

2N2907AUB by Microchip is a PNP BJT transistor with 60V VCE, 0.6A IC, and 1.16W power dissipation. Ideal for switching applications due to its fast turn-on time of 45ns and small outline package style. Suitable for surface mount designs with ceramic-metal sealed co-fired body material.
2N2222AUB by Silicon Transistor

2N2222AUB

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3904 by Weitronic Enterprise

MMBT3904

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;
MMBT3904 by Diotec Semiconductor Ag

MMBT3904

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;