Analog Devices - MAT03FHZ

  1. Home
  2. Analog Devices - MAT03FHZ
MAT03FHZ by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number MAT03FHZ
Description PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 190 MHz; Maximum Collector Current (IC): .02 A; Package Body Material: METAL;
Datasheet MAT03FHZ Datasheet
In Stock792
NAME DESCRIPTION
Nominal Transition Frequency (fT): 190 MHz
Package Body Material: METAL
Maximum Collector Current (IC): .02 A
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
JEDEC-95 Code: TO-78
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 80
Terminal Finish: GOLD
JESD-609 Code: e4
No. of Terminals: 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 36 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W6
No. of Elements: 2
Package Shape: ROUND
Terminal Form: WIRE
Additional Features: LOW NOISE
Maximum Operating Temperature: 150 Cel
Maximum VCEsat: .1 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
792 $15.000 $11,880.000

Popular Products

Category Top Products

BC817-40 by Itt Semiconductor

BC817-40

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; JEDEC-95 Code: TO-236; Maximum Collector-Base Capacitance: 12 pF;
2N3904TFR by Rochester Electronics

2N3904TFR

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
2N2222A by Digitron Semiconductors

2N2222A

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC817-25 by Fairchild Semiconductor

BC817-25

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
BC817-40 by Lite-on Semiconductor

BC817-40

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
MMBT2907A by Onsemi

MMBT2907A

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .8 A;
MMBT3904 by Diotec Semiconductor Ag

MMBT3904

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
BC847-B by Samsung

BC847-B

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
BC547B by Lite-on Semiconductor

BC547B

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: BOTTOM;
SBC807-25LT1G by Onsemi

SBC807-25LT1G

Onsemi

SBC807-25LT1G by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max VCEsat of 0.7V, min DC current gain (hFE) of 160, and max collector-emitter voltage of 45V. It is commonly used for switching applications in various industries.
BC547B by Diodes Incorporated

BC547B

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N3904 by Shanghai Lunsure Electronic Technology

2N3904

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector-Base Capacitance: 4 pF;
BC847AE6327HTSA1 by Infineon Technologies

BC847AE6327HTSA1

Infineon Technologies

BC847AE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 110, VCE of 45V, and fT of 250MHz. Ideal for switching applications, it operates at up to 150°C and has a collector current of 0.1A.
BC847BT116 by ROHM

BC847BT116

ROHM

ROHM BC847BT116 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 200, and IC of 0.1A. Ideal for amplifier applications, it has a max operating temp of 150°C and transition frequency of 200MHz. Its GULL WING terminals make it suitable for surface mount designs.
BC547BTA by Onsemi

BC547BTA

Onsemi

BC547BTA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 200, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 45V and max. collector current of 0.1A in a cylindrical package style.
JANTX2N2222A by Cobham Plc

JANTX2N2222A

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; Package Style (Meter): CYLINDRICAL;
2N2219A by Electronic Transistors

2N2219A

Electronic Transistors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC847C,215 by Nexperia

BC847C,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BCY89 by Tt Electronics Plc

BCY89

Tt Electronics Plc

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .03 A; Package Shape: ROUND;
2N2222A by Semitronics

2N2222A

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;