Analog Devices - MAT12AHZ

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MAT12AHZ by Analog Devices

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Manufacturer Analog Devices
Manufacturer's Part Number MAT12AHZ
Description NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; Case Connection: SUBSTRATE;
Datasheet MAT12AHZ Datasheet
In Stock920
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: METAL
Maximum Collector Current (IC): .02 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 300
No. of Terminals: 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 40 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W6
No. of Elements: 2
Package Shape: ROUND
Terminal Form: WIRE
Additional Features: LOW NOISE
Maximum Operating Temperature: 150 Cel
Case Connection: SUBSTRATE
Peak Reflow Temperature (C): NOT SPECIFIED
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