Analog Devices - MAX2235EUP+T

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Frequency: 0 MHz;

Broadcom's MGA-82563-BLKG is a GAAS RF amplifier with 8.8 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 1.2, suitable for wideband low-power applications in RF and microwave systems. The component is surface-mountable with a max supply current of 101 mA and operates b/w -40°C to 85°C.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 50 MHz; Minimum Operating Temperature: -40 Cel;

Qorvo's QPA1011 is a wide band high power RF amplifier with 28 dB gain and 30 dBm CW input power. Operating from 7900 to 11000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in RF & microwave systems, with a temperature range of -40 to 85°C.

NXP Semiconductors' BGA3018,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features surface mounting and TIN terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

GALI-2+ by Mini-circuits is a RF amplifier with 12 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.6, suitable for wideband low-power applications in RF and microwave systems. The component is constructed with plastic/epoxy package body material and operates b/w -45°C to 85°C temperature range.

GALI-6F by Mini-circuits is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 20 dBm CW input power. Ideal for RF & microwave applications requiring compact surface mount components.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

WIDE BAND LOW POWER;

Infineon's BGA614H6327XTSA1 is a wide band low power RF amplifier with 17.5 dB gain and 10 dBm max input power. Operating from -65 to 150 °C, it covers frequencies from 0 to 2400 MHz, making it ideal for RF & microwave applications requiring high performance in a compact form factor.

WIDE BAND LOW POWER;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

RF/Microwave Amplifiers;

AD8350ARMZ20 by Analog Devices is a wide band medium power RF amplifier with 19 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it ideal for RF applications requiring high performance in the -40 to 85°C temperature range.

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 16 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -25 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC799LP3E is a wide band low power RF amplifier with 42 dB gain. Operating from -40°C to 85°C, it covers frequencies from 0 MHz to 700 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.