Analog Devices - MAX2373ETC+G071

Broadcom's MGA-81563-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package, operates at temperatures b/w -40°C to 85°C, and requires a 3V power supply.

TRF37A75IDSGT by Texas Instruments is a wide band low power RF amplifier with 12 dB gain and 50 ohm impedance. It operates from 40 MHz to 6 GHz, handling up to 10 dBm CW input power. Ideal for applications requiring surface mount components in RF and microwave systems.

Infineon's BGA622H6820XTSA1 is a wide band low power RF amplifier with 13.6 dB gain, operating from 500 MHz to 6000 MHz. It can handle up to 6 dBm input power and operates b/w -65°C to 150°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact component design.

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 1000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;

NXP Semiconductors' BGA3018,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features surface mounting and TIN terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

Qorvo's CMD192C5 is a wide band low power RF amplifier with 17 dB gain and 23 dBm CW input power. Operating from -40 to 85°C, it covers 0-20000 MHz range. Ideal for RF & microwave applications requiring high performance in compact designs.

Analog Devices' MAX2630EUS+T is a wide band low power RF amplifier with 11dB gain, operating b/w 800-1000MHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for surface mount applications in RF & microwave systems. With a compact package and low supply current of 11mA at 3V, it's ideal for high-frequency signal amplification.

AD8353ACPZ-REEL7 by Analog Devices is a wide band low power RF amplifier with 15.6 dB gain, operating from 1 MHz to 2700 MHz. It has a max input power of 10 dBm and operates on a 5V supply, making it suitable for RF and microwave applications requiring high performance in a compact package.

AFIC901NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 31.2 dB gain, operating from 1.8 MHz to 1000 MHz. It has a max VSWR of 25 and operates b/w -40°C to 150°C, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface mount package.

Agilent Technologies' MGA-86576 is a RF & Microwave Amplifier with GaAs technology, 5V power supply, and 22mA max current. It has a metal package for surface mount applications in various electronic devices.

Analog Devices' HMC516 is a GAAS RF amplifier with 18dB gain, operating from 7-17GHz. It has a max input power of 5dBm and requires a 3V supply, drawing 88mA. Ideal for wideband low-power applications in RF & microwave systems due to its high performance and gold terminal finish.

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.

Analog Devices' HMC6981LS6TR is a GaAs RF amplifier with 16 terminals, operating at 6V. With wideband high power capability, it has a ceramic package and can withstand temperatures from -40°C to 85°C. Ideal for surface mount applications in RF and microwave systems.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.145CIR;

HMC549MS8G by Analog Devices is a wide band low power RF amplifier with 2 dB gain, operating from 40 MHz to 960 MHz. It has a max input power of 0 dBm and operates on a 5V power supply. This surface mount component is ideal for RF and microwave applications requiring amplification in the frequency range specified.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 3;

WIDE BAND HIGH POWER;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 6;