Analog Devices - MAX3203EEEWT+T

MAX3203EEEWT+T by Analog Devices

Image shown is a representation only.

Manufacturer	Analog Devices
Manufacturer's Part Number	MAX3203EEEWT+T
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: BALL; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	MAX3203EEEWT+T Datasheet
In Stock	2,518

MAX3203EEEWT+T Technical Details

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Config:	COMPLEX
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Surface Mount:	YES
Diode Element Material:	SILICON
No. of Terminals:	6
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
Technology:	AVALANCHE
JESD-30 Code:	R-PBGA-B6
No. of Elements:	6
Package Shape:	RECTANGULAR
Maximum Power Dissipation:	.98 W
Terminal Form:	BALL
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,518	-	-

Popular Products

ABS10-32.768KHZ-T

Abracon

Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.

C0603C104K5RACTU

KEMET Corporation

KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.

BAV99

STMicroelectronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SMMBT3904LT1G

Onsemi

SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.

MMBF170LT1G

Onsemi

MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.

OPA2277UA

Burr-Brown Corporation

OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

LL4148

First Components International

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

1N4148

Synsemi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

SS14

Pro-an Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FDD5614P

Onsemi

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

Category Top Products