MAX3227EEAE/V+T by Analog Devices | Interface ICs

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Manufacturer	Analog Devices
Manufacturer's Part Number	MAX3227EEAE/V+T
Description	Line Driver or Receivers; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 16; Package Code: SSOP; Package Shape: RECTANGULAR;
In Stock	1,911

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Minimum Out Swing:	10 V
Sub-Category:	Line Driver or Receivers
Surface Mount:	YES
Maximum Supply Current:	1 mA
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	16
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, SHRINK PITCH
Screening Level:	AEC-Q100
Technology:	BICMOS
JESD-30 Code:	R-PDSO-G16
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	85 Cel
Package Code:	SSOP
Maximum Output Low Current:	1.6 Amp
Moisture Sensitivity Level (MSL):	1
Driver No. of Bits:	1
Differential Output:	NO
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Qualification:	Not Qualified
Package Equivalence Code:	SSOP16,.3
Peak Reflow Temperature (C):	260
Terminal Pitch:	.635 mm
Temperature Grade:	INDUSTRIAL
Power Supplies (V):	3.3/5

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,911	-	-

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Config: SINGLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;