Api Technologies - PC123

GC1719-192 by Microchip Technology is a SINGLE varactor diode with 33pF nominal capacitance, abrupt classification, and 800 min quality factor. Ideal for applications in very high frequency to Ku band due to its 60V min breakdown voltage and -55°C to 125°C operating temperature range.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

1N5476 by Onsemi is a varactor diode with 100pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

BB208-03,115 by NXP Semiconductors is a varactor diode with a capacitance ratio of 3.7 and a max reverse voltage of 10V. It operates b/w -55°C to 125°C, has a nominal capacitance of 10.1pF, and is designed for applications requiring variable capacitance diodes in small outline packages.

MV2101 by Onsemi is a single varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this through-hole diode offers precise tuning capabilities in cylindrical package style.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The Onsemi SVC342 is a Varactor Diode with 2 elements, offering a min Quality Factor of 200 and a Nominal Diode Capacitance of 503 pF. Commonly used in RF applications, it features a Min Breakdown Voltage of 16 V and is designed with a COMMON CATHODE configuration for optimal performance.

MMBV2109LT1 by Onsemi is a varactor diode with a min quality factor of 200, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 33 pF and operates at a max power dissipation of 0.225 W. This single-configured diode features a gull wing terminal form and tin/lead finish in a small outline package shape.

The Onsemi 1N4800 is a Varactor Diode with a Min Quality Factor of 15, Max Reverse Current of 0.000000005 uA, and Nominal Diode Capacitance of 100 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LV2209RLRP by Onsemi is a single varactor diode with a min quality factor of 200 and nominal capacitance of 33 pF. It operates at a max temperature of 150 °C, making it suitable for RF tuning applications in various electronic devices.

SMV1235-004LF by Skyworks Solutions is a Varactor Diode with 11.5pF capacitance, 15V breakdown voltage, and 750 min quality factor. Commonly used in S Band applications for RF tuning due to its hyperabrupt diode classification and small outline package style.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 20;

SMMBV809LT1 by Onsemi is a single hyperabrupt varactor diode with 5.3pF capacitance, 20V breakdown voltage, and 0.225W power dissipation. Ideal for ultra high frequency applications requiring small outline rectangular package with gull wing terminals.

BB804-3 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA, operates up to 100 °C, and comes in a compact rectangular package with dual terminals. Ideal for tuning circuits and RF applications, it ensures efficient performance in small form factors.

BB198 by NXP Semiconductors is a variable capacitance diode ideal for RF tuning applications. It features a nominal capacitance of 26.75 pF, operates b/w -65 °C to 150 °C, and has a max power dissipation of 0.3 W. Its compact design ensures efficient surface mount integration.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 25; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 5; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;