Baneasa S A - 2N2905A

  1. Home
  2. Baneasa S A - 2N2905A
2N2905A by Baneasa S A

Image shown is a representation only.

Manufacturer Baneasa S A
Manufacturer's Part Number 2N2905A
Description Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Terminal Form: WIRE; Qualification: Not Qualified; Transistor Element Material: SILICON;
Datasheet 2N2905A Datasheet
In Stock6,008
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE
Transistor Element Material: SILICON
JEDEC-95 Code: TO-39
Surface Mount: NO
No. of Terminals: 3
Qualification: Not Qualified
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
6,008 - -

Popular Products

Category Top Products

BC847B by Yangzhou Yangjie Electronics

BC847B

Yangzhou Yangjie Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200;
JANTX2N2222AUB by M/a-com Technology Solutions

JANTX2N2222AUB

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; Reference Standard: MIL-19500;
2N2222A by Crystalonics

2N2222A

Crystalonics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2222ALT1 by Db Lectro

MMBT2222ALT1

Db Lectro

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
2N2222A by National Semiconductor

2N2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;
2N2907A by NXP Semiconductors

2N2907A

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: METAL;
2N3906 by Zetex Plc

2N3906

Zetex Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2222AUB by Microchip Technology

2N2222AUB

Microchip Technology

2N2222AUB by Microchip Technology is a small signal NPN bipolar junction transistor with a max collector-emitter voltage of 50V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/300ns) and high DC current gain (hFE=30).
BC817-25 by Continental Device India

BC817-25

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
2N2219A by Cobham Plc

2N2219A

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Body Material: METAL; No. of Terminals: 3;
2N2222AUA by Optek Technology

2N2222AUA

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847C by General Semiconductor

BC847C

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC846B,235 by NXP Semiconductors

BC846B,235

NXP Semiconductors

BC846B,235 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V and min hFE of 200. With a max operating temperature of 150°C, it can handle up to 0.1A collector current in a small outline package suitable for surface mount technology.
2N2219A by Semitronics

2N2219A

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC817-40 by Samsung

BC817-40

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Terminal Position: DUAL;
MMBT2222A by General Semiconductor

MMBT2222A

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
JANTX2N2222AUA by Micropac Industries

JANTX2N2222AUA

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Terminal Form: NO LEAD; Transistor Element Material: SILICON;
ZTX651 by Zetex Plc

ZTX651

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
2N2222AUA by Aeroflex/metelics

2N2222AUA

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; Terminal Form: NO LEAD;
2N2222A by M/a-com Technology Solutions

2N2222A

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;