Baneasa S A - BD138

NPN; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB; Peak Reflow Temperature (C): NOT SPECIFIED;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR; Terminal Position: SINGLE;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 150 Cel;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;

STMicroelectronics' BUT30V is an NPN BJT transistor with a max VCE of 125V and IC of 100A. Ideal for switching applications, it has a low VCEsat of 0.9V and fast fall time of 200ns. With a power dissipation of 250W, it operates up to 150°C making it suitable for high-power electronic systems.

JAN2N3055 by Microchip Tech is a NPN BJT transistor with max. collector-emitter voltage of 70V, max. collector current of 15A, and min. DC current gain of 20. It's used for switching applications in military standards like MIL-19500/407D, featuring a round package style with flange mount and tin lead terminal finish.

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

The NXP Semiconductors BU508AW is a single NPN BJT transistor for switching applications. With a max VCEsat of 1V, it can handle up to 8A collector current and 125W power dissipation. Operating at temperatures up to 150°C, it has a max collector-emitter voltage of 700V making it suitable for high-power electronic circuits.

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Maximum Collector-Emitter Voltage: 100 V;

TIP120TU by Onsemi is a NPN power BJT with 65W max power dissipation, ideal for switching applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 1000 and can handle up to 5A collector current. With a max operating temperature of 150°C and collector-emitter voltage of 60V, this transistor is designed for high-power tasks in various electronic circuits.

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;