Baneasa S A - BD243C

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 25 MHz; Maximum Collector Current (IC): 2 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 500;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 25;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A; No. of Terminals: 2;

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

TIP35C by Texas Instruments is a NPN BJT transistor with 100V VCEO, 25A IC, and 125W Ptot. Ideal for switching applications due to its high power dissipation capability. Features single configuration in a rectangular package suitable for flange mount installations.

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

TIP31CG by Onsemi is a NPN power BJT with 30W max power dissipation, 100V max collector-emitter voltage, and 3A max collector current. Ideal for switching applications, it has a min hFE of 10 and operates up to 150°C. Its through-hole terminal form makes it suitable for various electronic designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 15 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;

TIP47 by Samsung is a NPN power bipolar junction transistor with a maximum power dissipation of 40W and a maximum operating temperature of 150 °C. It has a maximum collector-emitter voltage of 250V and a maximum collector current of 1A. This transistor is designed for switching applications and has a minimum DC current gain of 10. Its package style is TO-220AB with a rectangular shape and through-hole terminal form.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;