Baneasa S A - BUX87

  1. Home
  2. Baneasa S A - BUX87
BUX87 by Baneasa S A

Image shown is a representation only.

Manufacturer Baneasa S A
Manufacturer's Part Number BUX87
Description NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE; Package Style (Meter): FLANGE MOUNT;
Datasheet BUX87 Datasheet
In Stock5,289
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-126
Polarity or Channel Type: NPN
Surface Mount: NO
No. of Terminals: 3
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Case Connection: ISOLATED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
5,289 - -

Popular Products

Category Top Products

TIP120 by Baneasa S A

TIP120

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR; No. of Elements: 1;
TIP31C by STMicroelectronics

TIP31C

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
MC1413DR2G by Onsemi

MC1413DR2G

Onsemi

MC1413DR2G by Onsemi is a NPN BJT transistor for switching applications. It has hFE of 1000, VCE of 50V, and IC of 0.5A. With a max operating temperature of 150°C, it is ideal for surface mount designs in various electronic circuits.
BUX87 by NXP Semiconductors

BUX87

NXP Semiconductors

The NXP Semiconductors BUX87 is a single NPN power BJT transistor with a max VCEsat of 1V, ideal for switching applications. With a max collector-emitter voltage of 450V and a max power dissipation of 20W, it operates at temperatures up to 150°C. This silicon-based transistor has a min DC current gain of 26 and can handle a max collector current of 0.5A.
MJD44H11J by Nexperia

MJD44H11J

Nexperia

MJD44H11J by Nexperia is a NPN BJT transistor for switching applications. It has a max VCEsat of 1V, max collector-emitter voltage of 80V, and max collector current of 8A. With a small outline package style, it operates b/w -55 to 150°C and offers a transition frequency of 160MHz.
TIP32CG by Onsemi

TIP32CG

Onsemi

TIP32CG by Onsemi is a PNP power BJT with 3A max collector current, 40W power dissipation, and 100V max collector-emitter voltage. Ideal for switching applications, it has a min hFE of 10 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals.
TIP125 by Fairchild Semiconductor

TIP125

Fairchild Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
BCP56-16 by Zetex Plc

BCP56-16

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A;
MJE3055T by General Transistor

MJE3055T

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP147 by Nte Electronics

TIP147

Nte Electronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT;
TIP110 by Motorola

TIP110

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
TIP125 by Bourns

TIP125

Bourns

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP147 by Bourns

TIP147

Bourns

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 100 V; Terminal Position: SINGLE;
TIP36C by STMicroelectronics

TIP36C

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
ULN2803ANE4 by Texas Instruments

ULN2803ANE4

Texas Instruments

ULN2803ANE4 by Texas Instruments is an 8-bank Darlington transistor array with built-in diode and resistor, ideal for switching applications. It features a max collector-emitter voltage of 50V, collector current of 0.5A, and can operate at temperatures up to 150°C. This NPN transistor comes in a rectangular package with through-hole terminals.
TIP147 by Motorola

TIP147

Motorola

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 10 A; No. of Terminals: 3;
TIP35C by Bourns

TIP35C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
TIP112 by Changzhou Galaxy Century Microelectronics

TIP112

Changzhou Galaxy Century Microelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE; Terminal Position: SINGLE;
MJD127G by Changzhou Galaxy Century Microelectronics

MJD127G

Changzhou Galaxy Century Microelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
NJVMJD340T4G by Onsemi

NJVMJD340T4G

Onsemi

NJVMJD340T4G by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 15W Ptot. Ideal for switching applications, it operates b/w -65 to 150 °C and has a hFE of 30. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance.